HMMBE interno - Biasiol (DFM.AD006.264)

Area tematica

Scienze fisiche e tecnologie della materia

Area progettuale

Struttura responsabile del progetto di ricerca

Istituto officina dei materiali (IOM)

Responsabile di progetto

GIORGIO BIASIOL
Telefono: 040
E-mail: biasiol@iom.cnr.it

Abstract

The High Mobility Molecular Beam Epitaxy is a facility dedicated to the growth of high purity
III/V semiconductors in UHV with atomic layer control on compositions and thicknesses. The
model is a Veeco Gen II machine with a dedicated design for high mobility, equipped with
As (2X), Ga (2X), Al, In effusion cells and Si and C doping sources for growth on 2" GaAs
wafers. Grown structures range from high mobility two- dimensional electron systems in
GaAs/AlGaAs (with mobilities up to 8.6 X 106 cm2/Vs) and metamorphic InGaAs/ InAlAs
heterostructures, to photonic structures, photon detectors and self-assembled
nanostructures.

Data inizio attività

01/01/2022

Parole chiave

crescita epitassiale

Ultimo aggiornamento: 23/01/2025