PRIN 2017 Picozzi 2017YCTB59 - TWEET: ToWards fErroElectricity in Two-dimensions (DFM.AD002.093)
Area tematica
Scienze fisiche e tecnologie della materia
Area progettuale
Scienze e tecnologie quantistiche (DFM.AD002)Struttura responsabile del progetto di ricerca
Istituto superconduttori, materiali innovativi e dispositivi (SPIN)
Responsabile di progetto
SILVIA PICOZZI
Telefono: 3397936993
E-mail: silvia.picozzi@spin.cnr.it
Abstract
Inspired by the global thrust towards miniaturization and by the ubiquitous research in 2D-materials, TWEET promises disruptive advances in ferroelectricity towards the 2D-limit. By targeting the delivery of technological impact via fundamental understanding and materials optimization, our goal will be to achieve full control of ferroelectricity in few-layers films of CMOS-compatible materials. TWEET is conceived in two pillars. The first is focused on the growth of high-quality HfO2 ultrathin films, aiming at microscopic understanding and control of the ferroelectric order, complemented by device exploitation in tunnel barriers. The second pillar focuses on the growth of 2D-chalcogenides (SnTe, GeTe), the ferroelectric control of their spin texture and the exploitation of non-volatile electric tuning of charge/spin transport, capitalizing on the discovery (by the PI and some consortium members) of a novel spin-electric coupling in bulk GeTe. The TWEET vision is fulfilled by the synergy of accurate modelling, highly-controlled synthesis, advanced characterizations and cutting-edge device implementation, activities led by recognized senior and young leaders in respective fields.
Obiettivi
Our final goal is to make a significant step forward in ferroelectricity for industry-friendly few-layers materials, aiming at the following objectives:
- Growth of high-quality single-crystal single-oriented Hafnium-Oxide-based Ultra-Thin Films;
- Full control and characterization on ferroelectric order in static and dynamic regimes on hafnia thin-films and their device-exploitation as tunnel barriers;
- Growth of two-dimensional chalcogenides with control over ferroelectricity and spin topology;
- Exploitation of electrically tunable charge and spin transport in two-dimensional chalcogenides thin films;
- Microscopic understanding of the stabilization of ferroelectric phases in Hafnia thin-films and two-dimensional chalcogenides and related optimization for improved functionalities.
Data inizio attività
19/08/2019
Parole chiave
PRIN, 2019, TWEET
Ultimo aggiornamento: 31/07/2025