PRIN 2017 Picozzi 2017YCTB59 - TWEET: ToWards fErroElectricity in Two-dimensions (DFM.AD002.093)

Thematic area

Physical sciences and technologies of matter

Project area

Structure responsible for the research project

Institute for superconductors, oxides and other innovative materials and devices (SPIN)

Project manager

SILVIA PICOZZI
Phone number: 3397936993
Email: silvia.picozzi@spin.cnr.it

Abstract

Inspired by the global thrust towards miniaturization and by the ubiquitous research in 2D-materials, TWEET promises disruptive advances in ferroelectricity towards the 2D-limit. By targeting the delivery of technological impact via fundamental understanding and materials optimization, our goal will be to achieve full control of ferroelectricity in few-layers films of CMOS-compatible materials. TWEET is conceived in two pillars. The first is focused on the growth of high-quality HfO2 ultrathin films, aiming at microscopic understanding and control of the ferroelectric order, complemented by device exploitation in tunnel barriers. The second pillar focuses on the growth of 2D-chalcogenides (SnTe, GeTe), the ferroelectric control of their spin texture and the exploitation of non-volatile electric tuning of charge/spin transport, capitalizing on the discovery (by the PI and some consortium members) of a novel spin-electric coupling in bulk GeTe. The TWEET vision is fulfilled by the synergy of accurate modelling, highly-controlled synthesis, advanced characterizations and cutting-edge device implementation, activities led by recognized senior and young leaders in respective fields.

Goals

Our final goal is to make a significant step forward in ferroelectricity for industry-friendly few-layers materials, aiming at the following objectives:
- Growth of high-quality single-crystal single-oriented Hafnium-Oxide-based Ultra-Thin Films;
- Full control and characterization on ferroelectric order in static and dynamic regimes on hafnia thin-films and their device-exploitation as tunnel barriers;
- Growth of two-dimensional chalcogenides with control over ferroelectricity and spin topology;
- Exploitation of electrically tunable charge and spin transport in two-dimensional chalcogenides thin films;
- Microscopic understanding of the stabilization of ferroelectric phases in Hafnia thin-films and two-dimensional chalcogenides and related optimization for improved functionalities.

Start date of activity

19/08/2019

Keywords

PRIN, 2019, TWEET

Last update: 02/08/2025