ABB Switwerland_Development of the SiC Ion Implantation Processing for Power Electrinic Devices_Contract No.2018-1227-01 (DFM.AD001.195)
Area tematica
Scienze fisiche e tecnologie della materia
Area progettuale
Sensori multifunzionali e dispositivi elettronici (DFM.AD001)Struttura responsabile del progetto di ricerca
Istituto per la microelettronica e microsistemi (IMM)
Responsabile di progetto
ROBERTA NIPOTI
Telefono: 0516399147
E-mail: nipoti@bo.imm.cnr.it
Abstract
ABB and IMM-Bologna aims to study the thermodynamics of the electrical activation of Al ion implanted in 4H-SiC as a function of the implanted dopant concentration in the range 10E18 cm-3 - 1E20 cm-3. Moreover the two partners aims to investigate the collateral effects of the high temperature thermal treatments, used for post implantation annealing, on the carrier lifetime in the 4H-SiC electronic devices obtained by ion implantation.
Obiettivi
The objective of this study if to obtain a more efficient electrical p-type doping of 4H-SiC by ion implantation and the control of carrier life time in ion implanted 4H-SiC electronic devices.
Data inizio attività
01/01/2018
Parole chiave
Sic, Ion Implantation, Anealing
Ultimo aggiornamento: 13/10/2024