ABB Switwerland_Development of the SiC Ion Implantation Processing for Power Electrinic Devices_Contract No.2018-1227-01 (DFM.AD001.195)
Thematic area
Physical sciences and technologies of matter
Project area
Sensori multifunzionali e dispositivi elettronici (DFM.AD001)Structure responsible for the research project
Institute of nanostructured materials (ISMN)
Other structures collaborating in the research project
Project manager
ROBERTA NIPOTI
Phone number: 0516399147
Email: nipoti@bo.imm.cnr.it
Abstract
ABB and IMM-Bologna aims to study the thermodynamics of the electrical activation of Al ion implanted in 4H-SiC as a function of the implanted dopant concentration in the range 10E18 cm-3 - 1E20 cm-3. Moreover the two partners aims to investigate the collateral effects of the high temperature thermal treatments, used for post implantation annealing, on the carrier lifetime in the 4H-SiC electronic devices obtained by ion implantation.
Goals
The objective of this study if to obtain a more efficient electrical p-type doping of 4H-SiC by ion implantation and the control of carrier life time in ion implanted 4H-SiC electronic devices.
Start date of activity
01/01/2018
Keywords
Sic, Ion Implantation, Anealing
Last update: 31/05/2025