HMMBE interno - Biasiol (DFM.AD006.264)
Thematic area
Physical sciences and technologies of matter
Project area
Infrastrutture di ricerca , strumentazione avanzata e nuove metodologie sperimentali e di calcolo (DFM.AD006)Structure responsible for the research project
Project manager
GIORGIO BIASIOL
Phone number: 040
Email: biasiol@iom.cnr.it
Abstract
The High Mobility Molecular Beam Epitaxy is a facility dedicated to the growth of high purity
III/V semiconductors in UHV with atomic layer control on compositions and thicknesses. The
model is a Veeco Gen II machine with a dedicated design for high mobility, equipped with
As (2X), Ga (2X), Al, In effusion cells and Si and C doping sources for growth on 2" GaAs
wafers. Grown structures range from high mobility two- dimensional electron systems in
GaAs/AlGaAs (with mobilities up to 8.6 X 106 cm2/Vs) and metamorphic InGaAs/ InAlAs
heterostructures, to photonic structures, photon detectors and self-assembled
nanostructures.
Start date of activity
01/01/2022
Keywords
crescita epitassiale
Last update: 24/04/2025