HMMBE interno - Biasiol (DFM.AD006.264)

Thematic area

Physical sciences and technologies of matter

Project area

Structure responsible for the research project

Institute of materials (IOM)

Project manager

GIORGIO BIASIOL
Phone number: 040
Email: biasiol@iom.cnr.it

Abstract

The High Mobility Molecular Beam Epitaxy is a facility dedicated to the growth of high purity
III/V semiconductors in UHV with atomic layer control on compositions and thicknesses. The
model is a Veeco Gen II machine with a dedicated design for high mobility, equipped with
As (2X), Ga (2X), Al, In effusion cells and Si and C doping sources for growth on 2" GaAs
wafers. Grown structures range from high mobility two- dimensional electron systems in
GaAs/AlGaAs (with mobilities up to 8.6 X 106 cm2/Vs) and metamorphic InGaAs/ InAlAs
heterostructures, to photonic structures, photon detectors and self-assembled
nanostructures.

Start date of activity

01/01/2022

Keywords

crescita epitassiale

Last update: 24/04/2025