MUNDFAB - Modeling Unconventional Nanoscaled Device FABrication (DFM.AD006.187)

Thematic area

Physical sciences and technologies of matter

Project area

Structure responsible for the research project

Institute for microelectronics and microsystems (IMM)

Project manager

ANTONINO LAMAGNA
Phone number: 0955968220
Email: antonino.lamagna@imm.cnr.it

Abstract

Because of power, energy, and cost reasons, a further development of big data and mobility applications as well as the Internet of Things will require continued Power-Performance-Area-and-Cost (PPAC, formerly More Moore) scaling. This is predicted to lead within less than a decade to a paradigm change towards the 3D sequential integration of nanosized structures. While technology-computer aided design (TCAD) is indispensable now particularly for the early stages of industrial research and development, we face the situation that classical continuum tools lose their predictivity when going towards the nano world and towards the very low temperature processes required for 3D sequential integration. They are then neither able to predict the reduced electrical activation of dopants, nor topography effects like faceting, nor defect formation and growth. Accordingly, the NEREID NanoElectronics Roadmap for Europe explicitly requests to "...develop new tools taking into account all the new materials, technologies and device architectures..." ...

Start date of activity

01/01/2020

Keywords

Technology Computer Aided Design, TCAD, 3D sequential integration

Last update: 31/05/2025