Memristive devices for brain-inspired computing - MEMBRAIN (DFM.AD001.265)

Thematic area

Physical sciences and technologies of matter

Project area

Structure responsible for the research project

Institute for microelectronics and microsystems (IMM)

Project manager

SABINA SPIGA
Phone number: 0396035938
Email: sabina.spiga@mdm.imm.cnr.it

Abstract

Memristive devices are today of large interest since they can be used to reproduce bio-inspired systems: for example they can act as dispersed memory elements mimicking the role of synapses in the nervous systems, or as stochastic and non-linear elements of neuronal units. Therefore, they can be used as new building blocks for brain-inspired computing technologies towards non-Von Neumann paradigms that dramatically reduce the power-cost in computing architectures and data communication. This project will focus on Resistive Random Access Memories, i.e. a class of memristive devices which exploit redox reactions and electrochemical phenomena in oxides to achieve a controlled and reversible resistance variations upon voltage application. The resistance switching is achieved by the interplay among electronic conduction, ionic migration and heat generation/diffusion. The project aims at the fabrication, characterization and physical modelling of RRAM-memristors for bio-inspired computing. The RRAM switching dynamics will be studied and engineered to reproduce the biological functionality of neuron and synapses at device level, for future integration in hardware spiking neural networks.

Start date of activity

01/09/2019

Keywords

memristive devices, RRAM, neuromorphic computing

Last update: 31/05/2025