Xene Fabrication for a Two-Dimensional Nanotechnology Platform (DFM.AD003.262)

Thematic area

Physical sciences and technologies of matter

Project area

Structure responsible for the research project

Institute for microelectronics and microsystems (IMM)

Project manager

ALESSANDRO MOLLE
Phone number: 0396032884
Email: alessandro.molle@mdm.imm.cnr.it

Abstract

Xenes denote two-dimensional monoelemental (X) crystals beyond graphene with a honeycomb lattice. Unlike graphene, Xenes are grown by epitaxy on substrates. So far experimental evidences of Xene epitaxy have been reported for X=Si, Ge, Sn, B, P, and Sb (named silicene, germanene, stanene, borophene, phosphorene, and antimonene, respectively). However only silicene has been integrated into transistors operating at room temperature. A viable nanotechnology that is universally applicable to the Xenes is currently missing due to the lack of reliable standards for the Xene production and implementation. For this purpose, the XFab project aims at developing schemes for high-quality crystal growth, environmental stabilization, and device integration of Xenes. First, the effort will be focused on the high-quality synthesis of selected Xenes by means of molecular beam epitaxy, and on their stabilization in encapsulated structures. Validation of the Xene properties will be carried out by means of advanced in situ and ex situ characterization. Second, prototypical electronic devices based on Xenes will be used to assess the Xene electrical performance.

Start date of activity

01/04/2018

Keywords

Xenes, 2D materials, nanoelectronics

Last update: 20/04/2024