Memristive devices for brain-inspired computing - MEMBRAIN (DFM.AD001.265)

Area tematica

Scienze fisiche e tecnologie della materia

Area progettuale

Struttura responsabile del progetto di ricerca

Istituto per la microelettronica e microsistemi (IMM)

Responsabile di progetto

SABINA SPIGA
Telefono: 0396035938
E-mail: sabina.spiga@mdm.imm.cnr.it

Abstract

Memristive devices are today of large interest since they can be used to reproduce bio-inspired systems: for example they can act as dispersed memory elements mimicking the role of synapses in the nervous systems, or as stochastic and non-linear elements of neuronal units. Therefore, they can be used as new building blocks for brain-inspired computing technologies towards non-Von Neumann paradigms that dramatically reduce the power-cost in computing architectures and data communication. This project will focus on Resistive Random Access Memories, i.e. a class of memristive devices which exploit redox reactions and electrochemical phenomena in oxides to achieve a controlled and reversible resistance variations upon voltage application. The resistance switching is achieved by the interplay among electronic conduction, ionic migration and heat generation/diffusion. The project aims at the fabrication, characterization and physical modelling of RRAM-memristors for bio-inspired computing. The RRAM switching dynamics will be studied and engineered to reproduce the biological functionality of neuron and synapses at device level, for future integration in hardware spiking neural networks.

Data inizio attività

01/09/2019

Parole chiave

memristive devices, RRAM, neuromorphic computing

Ultimo aggiornamento: 04/10/2024