INTERFAST - Gated INTERfaces for FAST information processing (DCM.AD006.332)

Thematic area

Chemical sciences and materials technology

Project area

Structure responsible for the research project

Institute of nanostructured materials (ISMN)

Project manager

VALENTIN DEDIU
Phone number: 051-6398507
Email: VALENTIN.DEDIU@CNR.IT

Abstract

INTERFAST will develop a novel technological platform for the voltage control of interfacial magnetism. The key idea is to
manipulate, via a gate, the hybrid states at the interface between a magnetic material and an organic layer, in a way to affect
the effective spin-orbit coupling at such interface. This will allow us to actively control the interfacial magnetism of a wide
range of magnetic and supporting compounds, thus providing a universal platform, which is not specific of the rare magnets
having massive voltage-control magneto-crystalline anisotropy coefficients. INTERFAST will demonstrate the applicability of
this technology to a range of key spintronic functions, encompassing voltage control of magnetisation reversal at fJ/bit
energy cost, drastic reduction of the spin-orbit-torque switching currents, and ultrafast THz information processing in allmetallic
spintronic devices aided by gateable hybridisation unit.

Goals

The working scheme of the Project is constructed in forceful device-oriented way, demonstrating the competitive potential of INTERFAST on three main OBJECTIVES:

highly efficient voltage induced magnetization switching (GHz memories and sensing)
ultimate reduction of the switching currents in Spin-Orbit torque (SOT) devices (GHz operation)
GHz-THz-range information processing via the Spin-Orbit Coupling control in three terminal devices

Start date of activity

01/05/2021

Keywords

interfaces spintronics, fast information processing

Last update: 08/06/2025