INTERFAST - Gated INTERfaces for FAST information processing (DCM.AD006.332)

Area tematica

Scienze chimiche e tecnologie dei materiali

Area progettuale

Struttura responsabile del progetto di ricerca

Istituto per lo studio dei materiali nanostrutturati (ISMN)

Responsabile di progetto

VALENTIN DEDIU
Telefono: 051-6398507
E-mail: VALENTIN.DEDIU@CNR.IT

Abstract

INTERFAST will develop a novel technological platform for the voltage control of interfacial magnetism. The key idea is to
manipulate, via a gate, the hybrid states at the interface between a magnetic material and an organic layer, in a way to affect
the effective spin-orbit coupling at such interface. This will allow us to actively control the interfacial magnetism of a wide
range of magnetic and supporting compounds, thus providing a universal platform, which is not specific of the rare magnets
having massive voltage-control magneto-crystalline anisotropy coefficients. INTERFAST will demonstrate the applicability of
this technology to a range of key spintronic functions, encompassing voltage control of magnetisation reversal at fJ/bit
energy cost, drastic reduction of the spin-orbit-torque switching currents, and ultrafast THz information processing in allmetallic
spintronic devices aided by gateable hybridisation unit.

Obiettivi

The working scheme of the Project is constructed in forceful device-oriented way, demonstrating the competitive potential of INTERFAST on three main OBJECTIVES:

highly efficient voltage induced magnetization switching (GHz memories and sensing)
ultimate reduction of the switching currents in Spin-Orbit torque (SOT) devices (GHz operation)
GHz-THz-range information processing via the Spin-Orbit Coupling control in three terminal devices

Data inizio attività

01/05/2021

Parole chiave

interfaces spintronics, fast information processing

Ultimo aggiornamento: 06/06/2025