Electrical activation of Fe impurities introduced in III semiconductors by high temperature ion implantation (Contributo in atti di convegno)

Type
Label
  • Electrical activation of Fe impurities introduced in III semiconductors by high temperature ion implantation (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • T. Cesca, G. Mattei, A. Gasparotto, B. Fraboni, G. Impellizzeri, F. Priolo, L. Tarricone, M. Longo (2007)
    Electrical activation of Fe impurities introduced in III semiconductors by high temperature ion implantation
    in 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, Austria., JUL 24-28, 2006
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • T. Cesca, G. Mattei, A. Gasparotto, B. Fraboni, G. Impellizzeri, F. Priolo, L. Tarricone, M. Longo (literal)
Pagina inizio
  • 241 (literal)
Pagina fine
  • 242 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 893 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Department of Physics, University of Padova, Via F. Marzolo 8, I-35131 Padova, Italy; Department of Physics, University of Bologna, V.le Berti-Pichat 6/2, I-40137 Bologna, Italy; MATIS CNR-INFM and Department of Physics and Astronomy, University of Catania, V. S. Sofia 64, I-95123 Catania, Italy; Department of Physics, University of Parma, Parco Area delle Scienze 7a, I-43100 Parma Italy (literal)
Titolo
  • Electrical activation of Fe impurities introduced in III semiconductors by high temperature ion implantation (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-0-7354-0397-0 (literal)
Abstract
  • We performed structural and electrical investigations on high temperature Fe implanted InP in order to correlate the lattice position of the implanted atoms after annealing treatments to their electrical activation as compensating deep traps. The overall results demonstrate that the Fe2+ deep trap activation properties are strictly connected to the annealing evolution of the lattice location of the Fe atoms in substitutional sites, which in turn is controlled by the background doping density in the substrates. (literal)
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