High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks (Articolo in rivista)

Type
Label
  • High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Renault, O., Fourdrinier, L., Martinez, E., Clavelier, L., Leroyer, C., Barrett, N., Crotti, C. (2007)
    High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Renault, O., Fourdrinier, L., Martinez, E., Clavelier, L., Leroyer, C., Barrett, N., Crotti, C. (literal)
Pagina inizio
  • 052112 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 90 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • ISM - CNR CEA-LETI, MINATEC, Grenoble, France CEA-DSM/DRECAM/SPCSI, Gif-sur-Yvette, France (literal)
Titolo
  • High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks (literal)
Abstract
  • High-resolution photoelectron spectroscopy with synchrotron radiation (energy resolution of 50 meV) is used to investigate interfacial properties of Ge/GeOx (1 nm)/HfO2 (1 nm) gate stacks. With soft x rays, a reliable Ge3d core-level study is possible thanks to the much lower cross section of the Hf5p core level than that using Al Kalpha radiation. It is clearly shown that Hf-germanate bonding states are formed at the GeOx/HfO2 interface, with an additional Ge3d spectral component shifted to lower binding energy relative to GeO2. (literal)
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