Amorphous-fcc transition in Ge2Sb2Te5 (Articolo in rivista)

Type
Label
  • Amorphous-fcc transition in Ge2Sb2Te5 (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Lombardo S, Rimini E, Grimaldi MG, Privitera S (2010)
    Amorphous-fcc transition in Ge2Sb2Te5
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lombardo S, Rimini E, Grimaldi MG, Privitera S (literal)
Pagina inizio
  • 294 (literal)
Pagina fine
  • 300 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 87 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR IMM, I-95121 Catania, Italy 2. Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy 3. STMicroetectronics, I-95121 Catania, Italy (literal)
Titolo
  • Amorphous-fcc transition in Ge2Sb2Te5 (literal)
Abstract
  • In this paper we discuss some major aspects on the physics of the phase transition from the amorphous to the face-centered-cubic (fcc) polycrystal in Ge2Sb2Te5 at low temperature. We follow the phase transformation by using structural techniques such as TEM, XRD. and electrical resistivity measurements by using the 4-point-probe technique. The results are interpreted in the framework of a quantitative model. (literal)
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