Ultra-shallow junction by laser annealing: Integration issues and modelling (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Ultra-shallow junction by laser annealing: Integration issues and modelling (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nimb.2006.10.004 (literal)

Alternative label

• La Magna A, Alippi P, Deretzis I, Privitera V, Fortunato G, Mariucci L, Magri A, Monakhov E, Svensson B (2006)
  Ultra-shallow junction by laser annealing: Integration issues and modelling
  in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• La Magna A, Alippi P, Deretzis I, Privitera V, Fortunato G, Mariucci L, Magri A, Monakhov E, Svensson B (literal)

Pagina inizio

• 1 (literal)

Pagina fine

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 253 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1-2 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, I-95121 Catania, Italy; CNR-IFN, I-00156 Rome, Italy; STMicroelect, I-95121 Catania, Italy; Univ Oslo, Dept Phys, N-0316 Oslo, Norway (literal)

Titolo

• Ultra-shallow junction by laser annealing: Integration issues and modelling (literal)

Abstract

• A revolutionary approach to the technology design is required for the integration of the laser annealing process in nano-electronic device fabrication. The list of the integration issues includes: the patterning effect, the extreme non-equilibrium kinetics of dopant and defects, the material modification due to the melting-regrowth phenomena (in the melting regime) and the residual damage problem. The intense research effort required surely benefits from an adequate development of dedicated technology computer aided design tools. We present the computational apparatus needed for the simulation of the laser annealing process in Si-based devices. The tools aim at the simulation at a different resolution (from the atomic to the continuum level) of the phenomena occurring inside the specimen during the irradiation. The usage impact of such simulation tools on the process integration is conclusively crucial for a reliable device design and the final optimisation of fabricated MOS transistors. (literal)

Prodotto di

• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• IOANNIS DERETZIS (Persona)
• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)

Insieme di parole chiave

• Parole chiave di "Ultra-shallow junction by laser annealing: Integration issues and modelling" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• VITTORIO PRIVITERA (Persona)
• IOANNIS DERETZIS (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Insieme di parole chiave di

• Parole chiave di "Ultra-shallow junction by laser annealing: Integration issues and modelling" (Insieme di parole chiave)