Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1116/1.1638773 (literal)

Alternative label

• Giannazzo, F; Mirabella, S; Priolo, F; Goghero, D; Raineri, V (2004)
  Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature
  in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo, F; Mirabella, S; Priolo, F; Goghero, D; Raineri, V (literal)

Pagina inizio

• 369 (literal)

Pagina fine

• 372 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 22 (literal)

Rivista

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, INFM, I-95123 Catania, Italy; Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy; CNR, IMM, I-95121 Catania, Italy (literal)

Titolo

• Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature (literal)

Abstract

• The two-dimensional (2D) diffusion of self-interstitials (I) in crystalline Si, both at room temperature and at 800degreesC, has been studied by quantitative scanning capacitance microscopy measurements. The 2D I emission from an I source laterally confined down to submicrometer dimensions, obtained by low-energy implantation through a patterned oxide mask, has been observed. At room temperature, I diffusion was monitored by measuring the electrical deactivation of B corresponding to the diffusing interstitial tail and it was demonstrated that this deactivation is due to compensating levels introduced by defects in the Si band gap. At 800degreesC I diffusion was monitored by measuring the transient enhanced diffusion of B spikes due to interstitial supersaturation produced during the annealing. In both cases, a dependence of the I depth-penetration on the original source size has been shown. (literal)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITO RAINERI (Persona)
• FRANCESCO PRIOLO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)

Insieme di parole chiave

• Parole chiave di "Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FRANCESCO PRIOLO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Insieme di parole chiave di

• Parole chiave di "Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature" (Insieme di parole chiave)