Progress in the realization of a silicon-CNT photodetector (Articolo in rivista)

Type
Label
  • Progress in the realization of a silicon-CNT photodetector (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.nima.2011.12.098 (literal)
Alternative label
  • Aramo, C.; Ambrosio, A.; Ambrosio, M.; Castrucci, P.; Cilmo, M.; De Crescenzi, M.; Fiandrini, E.; Guarino, F.; Grossi, V.; Nappi, E.; Passacantando, M.; Pignatel, G.; Santucci, S.; Scarselli, M.; Tinti, A.; Valentini, A. (2012)
    Progress in the realization of a silicon-CNT photodetector
    in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Aramo, C.; Ambrosio, A.; Ambrosio, M.; Castrucci, P.; Cilmo, M.; De Crescenzi, M.; Fiandrini, E.; Guarino, F.; Grossi, V.; Nappi, E.; Passacantando, M.; Pignatel, G.; Santucci, S.; Scarselli, M.; Tinti, A.; Valentini, A. (literal)
Pagina inizio
  • 150 (literal)
Pagina fine
  • 153 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 695 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Ist Nazl Fis Nucl; CNR SPIN UOS Napoli; University of Naples Federico II; University of Rome Tor Vergata; University of Perugia; Ist Nazl Fis Nucl; University of Aquila; University of Bari; Ist Nazl Fis Nucl (literal)
Titolo
  • Progress in the realization of a silicon-CNT photodetector (literal)
Abstract
  • The realization of a Silicon Carbon Nanotube heterojuntion opens the door to a new generation of photodetectors (Si-CNT detector) based on the coupling between this two materials. In particular the growth of Multiwall Carbon Nanotubes on the surface of a n-doped silicon substrate results on a Schottky diode junction with precise rectifying characteristics. The obtained device presents a low dark current, high efficiency in the photoresponsivity, high linearity and a wide stability range. The junction barrier is about 3.5 V in reverse polarity with a breakdown limit at more than 100 V. The spectral behavior reflects the silicon spectral range with a maximum at about 880 nm. (C) 2012 Elsevier B.V. All rights reserved. (literal)
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