Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring (Articolo in rivista) (literal)

Anno

• 2014-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4838056 (literal)

Alternative label

• Pettinari, G.; Felici, M.; Trotta, R.; Capizzi, M.; Polimeni, A. (2014)
  Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Pettinari, G.; Felici, M.; Trotta, R.; Capizzi, M.; Polimeni, A. (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 115 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 1 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Sapienza University Rome; Sapienza University Rome; Consiglio Nazionale delle Ricerche (CNR); Johannes Kepler University of Linz (literal)

Titolo

• Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring (literal)

Abstract

• The variation of the band gap energy of III-N-V semiconductors induced by hydrogen incorporation is the most striking effect that H produces in these materials. A special emphasis is given here to the combination of N-activity passivation by hydrogen with H diffusion kinetics in dilute nitrides. Secondary ion mass spectrometry shows an extremely steep (smaller than 5 nm/decade) forefront of the H diffusion profile in Ga(AsN) under appropriate hydrogenation conditions. This discovery prompts the opportunity for an in-plane nanostructuring of hydrogen incorporation and, hence, for a modulation of the material band gap energy at the nanoscale. The properties of quantum dots fabricated by a lithographically defined hydrogenation are presented, showing the zero-dimensional character of these novel nanostructures. Applicative prospects of this nanofabrication method are finally outlined. (C) 2014 AIP Publishing LLC. (literal)

Prodotto di

• Nanodispositivi spintronici e fotonici (MD.P06.001.004) (Modulo)
• Istituto di fotonica e nanotecnologie (IFN) (Istituto)

Autore CNR

• GIORGIO PETTINARI (Persona)

Incoming links:

Prodotto

• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• Nanodispositivi spintronici e fotonici (MD.P06.001.004) (Modulo)

Autore CNR di

• GIORGIO PETTINARI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)