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Angular dependence of magnetoresistivity in c-oriented MgB2 thin film (Articolo in rivista)

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Angular dependence of magnetoresistivity in c-oriented MgB2 thin film (Articolo in rivista) (literal)

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Ferdeghini, C [1]; Ferrando, V [1]; Braccini, V [1]; Cimberle, MR [2]; Marre, D [1]; Manfrinetti, P [3]; Palenzona, A [3]; Putti, M [1] (2002)
Angular dependence of magnetoresistivity in c-oriented MgB2 thin film
in European physical journal. B, Condensed matter and complex systems (Internet); SPRINGER-VERLAG, 175 FIFTH AVE, NEW YORK, NY 10010 (Stati Uniti d'America)
(literal)

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Ferdeghini, C [1]; Ferrando, V [1]; Braccini, V [1]; Cimberle, MR [2]; Marre, D [1]; Manfrinetti, P [3]; Palenzona, A [3]; Putti, M [1] (literal)

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[ 1 ] INFM, Dipartimento Fis, LAMIA, I-16146 Genoa, Italy [ 2 ] CNR, Dipartimento Fis, IMEM, I-16146 Genoa, Italy [ 3 ] INFM, Dipartimento Chim & Chim Ind, I-16146 Genoa, Italy (literal)

Titolo

Abstract

The anisotropy of MgB2 is still under debate: its value, strongly dependent on the kind of sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on MgB2 c-oriented superconducting thin film. To evaluate the anisotropy, we followed two different approaches. Firstly, magnetoresistivity was measured as a function of temperature at selected magnetic fields applied both parallel and perpendicular to the c-axis; secondly, we measured magnetoresistivity at selected temperatures and magnetic fields, varying the angle theta between the magnetic field and the c-axis. The anisotropy estimated from the ratio between the upper critical fields parallel and perpendicular to the c-axis and the one obtained in the framework of the scaling approach within the anisotropic Ginzburg-Landau theory are different but show a similar trend in the temperature dependence. Some differences in the upper critical field and in its anisotropy of our film with respect to single crystals are emphasized: some of these aspects can be accounted for by an analysis of upper critical fields within a two-band model in presence of disorder and/or crystallographic strain. (literal)

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