From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices (Contributo in atti di convegno) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Alternative label

• Buckley J, Pro T, Barattin R, Calborean A, Huang K, Aiello V, Nicotra G, Gely M, Delapierre G, Jalaguier E, Duclairoir F, Chevalier N, Mariolle D, Spinella C, Lombardo S, Blaise P, Maldivi P, Ghibaudo G, Baptist R, De Salvo B (2009)
  From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices
  in 2009 IEEE INTERNATIONAL MEMORY WORKSHOP, Monterey, CA, MAY 10-14, 2009
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Buckley J, Pro T, Barattin R, Calborean A, Huang K, Aiello V, Nicotra G, Gely M, Delapierre G, Jalaguier E, Duclairoir F, Chevalier N, Mariolle D, Spinella C, Lombardo S, Blaise P, Maldivi P, Ghibaudo G, Baptist R, De Salvo B (literal)

Pagina inizio

• 17 (literal)

Pagina fine

• 20 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CEA, LETI, MINATEC, F-38054 Grenoble 9, France IMM-CNR Catania (literal)

Titolo

• From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 978-1-4244-3761-0 (literal)

Abstract

• In this paper an extensive investigation of hybrid molecular/silicon field-effect memories is presented, where Redox Ferrocene (Fc) molecules play the role of the memory charge storage nodes. Engineering of the organic linkers between Fc and Si is achieved by grafting Fc with different linker lengths. The study shows a clear correlation between results from atomistic computational Density Functional Theory (DFT), electrochemical measurements (Cyclic Voltammetry) and electrical data obtained by a detailed study on Pseudo-MOS devices. Physical-chemical analyses (Atomic Force Microscopy, high-resolution Transmission Electron Microscopy, X-Ray Photoclectron Spectroscopy), were used to monitor the molecular layers. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SALVATORE LOMBARDO (Persona)
• ROSARIO CORRADO SPINELLA (Persona)

Insieme di parole chiave

• Parole chiave di "From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• SALVATORE LOMBARDO (Persona)
• ROSARIO CORRADO SPINELLA (Persona)

Insieme di parole chiave di

• Parole chiave di "From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices" (Insieme di parole chiave)