Growth and structural properties of hydrogenated silicon films deposited by pulsed laser ablation (Articolo in rivista)

Type
Label
  • Growth and structural properties of hydrogenated silicon films deposited by pulsed laser ablation (Articolo in rivista) (literal)
Anno
  • 1999-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1116/1.581665 (literal)
Alternative label
  • Trusso, S; Vasi, C; Neri, F; (1999)
    Growth and structural properties of hydrogenated silicon films deposited by pulsed laser ablation
    in Journal of vacuum science & technology. A. Vacuum, surfaces, and films (Online); American Institute of Physics, Woodbury [NY] (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Trusso, S; Vasi, C; Neri, F; (literal)
Pagina inizio
  • 921 (literal)
Pagina fine
  • 925 (literal)
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  • 17 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 3 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Ist Tech Spettroscpp, CNR, I-98123 Messina, Italy Univ Messina, Dipartimento Fis Mat & Tecn Fis Avanzatr, I-98166 Messina, Italy (literal)
Titolo
  • Growth and structural properties of hydrogenated silicon films deposited by pulsed laser ablation (literal)
Abstract
  • Hydrogenated silicon thin films have been deposited by means of pulsed laser ablation. Efficient hydrogenation was obtained by performing the ablation process in a controlled H2 atmosphere. Fluorescence spectroscopy characterization of the plume revealed the presence of both atomic hydrogen and highly ionized silicon atoms. The hydrogen content ranged from 2% to 15% as the H2 pressure was varied between 0.05 and 30 mbar. Infrared spectroscopy measurements showed a monohydride preferential incorporation at low hydrogen pressure. The films' crystalline fraction, obtained by both Raman scattering and x-ray diffraction experiments, was found to show a maximum value of about 60% for H2 pressure values around 1 mbar. These results suggest that crystallinity and hydrogenation of the film, deposited at room temperature, can be properly adjusted as a function of the deposition parameters. (literal)
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