Light emitting porous silicon diode based on a silicon/porous silicon heterojunction (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Light emitting porous silicon diode based on a silicon/porous silicon heterojunction (Articolo in rivista) (literal)

Anno

• 1999-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.371711 (literal)

Alternative label

• Pavesi, L; Chierchia, R; Bellutti, P; Lui, A; Fuso, F; Labardi, M; Pardi, L; Sbrana, F; Allegrini, M; Trusso, S; Vasi, C; Ventura, PJ; Costa, LC; Carmo, MC; Bisi, O (1999)
  Light emitting porous silicon diode based on a silicon/porous silicon heterojunction
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Pavesi, L; Chierchia, R; Bellutti, P; Lui, A; Fuso, F; Labardi, M; Pardi, L; Sbrana, F; Allegrini, M; Trusso, S; Vasi, C; Ventura, PJ; Costa, LC; Carmo, MC; Bisi, O (literal)

Pagina inizio

• 6474 (literal)

Pagina fine

• 6482 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 86 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• University of Trento University of Pisa Consiglio Nazionale delle Ricerche (CNR) Universidade de Aveiro University of Modena & Reggio Emilia (literal)

Titolo

• Light emitting porous silicon diode based on a silicon/porous silicon heterojunction (literal)

Abstract

• A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light emitting diodes (LED). It is based on a heterojunction between n-type doped silicon and PS. The heterojunction is formed due to the doping selectivity of the etching process used to form PS. The improvement of the proposed LED structure with respect to usual metal/PS LED is demonstrated. This is thought to be due to a different injection mechanism for which carriers are injected directly into conduction band states. Anodic oxidation experiments show further improvements in the LED efficiency. (literal)

Prodotto di

• Proprietà Dinamiche e Strutturali in Sistemi Disordinati (MD.P01.014.004) (Modulo)
• Istituto per i processi chimico-fisici (IPCF) (Istituto)

Autore CNR

• SEBASTIANO TRUSSO (Persona)
• MASSIMILIANO LABARDI (Persona)
• CIRINO SALVATORE VASI (Persona)

Incoming links:

Prodotto

• Istituto per i processi chimico-fisici (IPCF) (Istituto)
• Proprietà Dinamiche e Strutturali in Sistemi Disordinati (MD.P01.014.004) (Modulo)

Autore CNR di

• CIRINO SALVATORE VASI (Persona)
• MASSIMILIANO LABARDI (Persona)
• SEBASTIANO TRUSSO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)