\"Local site distribution of oxygen in silicon rich oxide thin films: a tool to investigate phase separation\" (Articolo in rivista)

Type
Label
  • \"Local site distribution of oxygen in silicon rich oxide thin films: a tool to investigate phase separation\" (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1021/jp301181y (literal)
Alternative label
  • D. Ristic, M. Ivanda, G. Speranza, Z.Siketic, I. Bogdanovic-Rakovic, M. Marciu?, M. Ristic, O. Gamulin, S. Musi?, K. Furic, G.C. Righini, M. Ferrari (2012)
    "Local site distribution of oxygen in silicon rich oxide thin films: a tool to investigate phase separation"
    in Journal of physical chemistry. C
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D. Ristic, M. Ivanda, G. Speranza, Z.Siketic, I. Bogdanovic-Rakovic, M. Marciu?, M. Ristic, O. Gamulin, S. Musi?, K. Furic, G.C. Righini, M. Ferrari (literal)
Pagina inizio
  • 10039 (literal)
Pagina fine
  • 10047 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 116 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CSMFO Laboratory, CNR-IFN, Via alla Cascata 56/C, Povo, 38123 Trento, Italy; Ru?er Bos?kovic? Institute, P.O. Box 180, 10002 Zagreb, Croatia; CSMFO Laboratory, CNR-IFN, Via alla Cascata 56/C, Povo, 38123 Trento, Italy; Fondazione Bruno Kessler FBK, Via Sommarive 18, Povo, 38123 Trento, Italy; Medical School, Department of Physics and Biophysics, University of Zagreb, Salata 3b, 10000, Zagreb, Croatia; MDF Laboratory, CNR-IFAC, Via Madonna del Piano 10, 50019 Sesto Fiorentino, Firenze, Italy; Centro Fermi, Piazza del Viminale 1, 00184 Roma, Italy (literal)
Titolo
  • \"Local site distribution of oxygen in silicon rich oxide thin films: a tool to investigate phase separation\" (literal)
Abstract
  • Nonstoichiometric silicon oxide (SiOx with x <2) thin films have been extensively studied during the last decades due to their importance in many electronic and optoelectronic applications, and particular attention has been paid to the models which could better describe their global structure. Here we present a detailed study of SiOx films deposited on silicon (111) and on silica substrates using the Low Pressure Chemical Vapour Deposition (LPCVD) method by thermal oxidation of silane in an oxygen atmosphere at the temperature of 570 oC. The oxygen and silane flows in the reactor were varied in order to deposit films with different values of oxygen content x. Ellipsometry and m-line measurements were used to determine the complex refractive index of the deposited films. The oxygen content in the films was measured by infrared spectroscopy, Energy Dispersive X-ray spectroscopy (EDX) and Time of Flight Elastic Recoil Detection Analysis (TOF-ERDA). The oxygen content in the films was also estimated from the measured values of the complex refractive indices by using Bruggeman's Effective Medium Aproximation (EMA). All the results were in good agreement, except those obtained from infrared spectroscopy, which corresponded to systematically higher oxygen contents. This effect was interpreted as due to an inhomogeneous distribution of oxygen atoms in the films (phase separation). This issue was confirmed by X-Ray Photoelectron Spectroscopy (XPS) analysis of the Si 2p core levels, which showed an almost complete phase separation of the silicon rich oxides into amorphous silicon and silicon-dioxide, indicating that the mixture model is the most appropriated for the present films. (literal)
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