\"Crystalline Silicon Growth in Nickel/a-Silicon Bilayer\" (Abstract/Comunicazione in atti di convegno)

Type
Label
  • \"Crystalline Silicon Growth in Nickel/a-Silicon Bilayer\" (Abstract/Comunicazione in atti di convegno) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Alternative label
  • Md. Ahamad Mohiddon, K. Lakshun Naidu, G. Dalba, F. Rocca, M. Ghanashyam Krishna (2012)
    "Crystalline Silicon Growth in Nickel/a-Silicon Bilayer"
    in 57th DAE Solid State Physics Symposium, Mumbay, India, 03-07/12/2012
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Md. Ahamad Mohiddon, K. Lakshun Naidu, G. Dalba, F. Rocca, M. Ghanashyam Krishna (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Booklet of Abstract (literal)
Note
  • Abstract (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • School of Physics, University of Hyderabad, Hyderabad-500046, India; Department of Physics, University of Trento, 38123 POVO (Trento) Italy; IFN-CNR, Institute for Photonics and Nanotechnologies, Unit \"FBK-Photonics\" of Trento, 38123, Trento, Italy (literal)
Titolo
  • \"Crystalline Silicon Growth in Nickel/a-Silicon Bilayer\" (literal)
Abstract
  • The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 oC. Raman mapping shows that, 2 to 5 micron size crystalline silicon clusters are distributed over the entire surface of the sample. X-ray diffraction and X-ray absorption spectroscopy studies demonstrate silicon crystallizes over the metal silicide seeds and grow with the annealing temperature. (literal)
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