@prefix prodottidellaricerca: . @prefix istituto: . @prefix prodotto: . istituto:CDS052 prodottidellaricerca:prodotto prodotto:ID198221 . @prefix pubblicazioni: . @prefix unitaDiPersonaleInterno: . unitaDiPersonaleInterno:MATRICOLA6183 pubblicazioni:autoreCNRDi prodotto:ID198221 . unitaDiPersonaleInterno:MATRICOLA19749 pubblicazioni:autoreCNRDi prodotto:ID198221 . unitaDiPersonaleInterno:MATRICOLA6558 pubblicazioni:autoreCNRDi prodotto:ID198221 . @prefix unitaDiPersonaleEsterno: . unitaDiPersonaleEsterno:ID2189 pubblicazioni:autoreCNRDi prodotto:ID198221 . unitaDiPersonaleEsterno:ID14391 pubblicazioni:autoreCNRDi prodotto:ID198221 . unitaDiPersonaleInterno:MATRICOLA11243 pubblicazioni:autoreCNRDi prodotto:ID198221 . @prefix rdf: . @prefix retescientifica: . prodotto:ID198221 rdf:type retescientifica:ProdottoDellaRicerca , prodotto:TIPO1304 . @prefix rdfs: . prodotto:ID198221 rdfs:label "Growth of 3C-SiC nanowires and layers on Si (Abstract/Poster in convegno)"@en . @prefix xsd: . prodotto:ID198221 pubblicazioni:anno "2012-01-01T00:00:00+01:00"^^xsd:gYear . @prefix skos: . prodotto:ID198221 skos:altLabel "
G.Attolini, M.Bosi, C.Ferrari, F.Fabbri, C. FRIGERI, F.Rossi, G.Salviati (2012)
Growth of 3C-SiC nanowires and layers on Si
in Fourth European Conference on Crystal Growth (ECCG4), Glasgow (UK), 17-20 June 2012
"^^rdf:HTML ; pubblicazioni:autori "G.Attolini, M.Bosi, C.Ferrari, F.Fabbri, C. FRIGERI, F.Rossi, G.Salviati"^^xsd:string ; skos:note "Abstract"^^xsd:string ; pubblicazioni:affiliazioni "IMEM-CNR Institute, Parco Area delle Scienze 37A. 43124 Parma (Italy)"^^xsd:string ; pubblicazioni:titolo "Growth of 3C-SiC nanowires and layers on Si"^^xsd:string ; prodottidellaricerca:abstract "Silicon carbide (SiC) is mechanically robust, chemically inert, non toxic and biocompatible, so is a good material for application in harsh environment and for biomedical purpose \nHere we report a study on properties of ?-SiC NWs and SiC layers deposited on silicon. Nanowires has been prepared with carbon oxide (core-shell), silane and propane both by using nickel as catalyst in a CVD and VPE system.\nNanowires has been characterised by X-ray diffraction (XRD), by Scanning Electron Microscopy (SEM), Cathodoluminescence (CL) and by means Transmission Electron Microscopy (TEM). \nXRD patterns confirmed the characteristic peaks of the cubic phase.\nThe room temperature CL spectrum revealed a broad peak centred at about 2.34 eV, related to the indirect band gap transition in ?-SiC, and an intense blue band at about 2.68 eV. \nTEM images showed the crystalline core, having a <111> growth axis, sheathed by amorphous oxide. Typical SiC planar defects were present mainly on (111) planes, either stacking faults or rotational twins. Selected area electron diffraction from single NWs indicated the main phase as ?-SiC.\nThe SiC thin films were deposited on 2'' 001 Si wafers by means of VPE technique with induction heating in a cold and hot wall reactors. A growth procedure at atmospheric pressure involving several steps (thermal etching, carburisation, epitaxial growth) was implemented. The precursor of choice were dilute SiH4 and C3H8 while H2 was used as carrier gas. \nThe layers have been characterised by XRD, SEM, AFM.\nX-Ray diffraction evidences SiC(001) film is well oriented whit respect to the substrate having a narrow peak. SEM and AFM observations indicate a smooth film with good morphology."@en ; prodottidellaricerca:prodottoDi istituto:CDS052 ; pubblicazioni:autoreCNR unitaDiPersonaleInterno:MATRICOLA11243 , unitaDiPersonaleInterno:MATRICOLA19749 , unitaDiPersonaleInterno:MATRICOLA6183 , unitaDiPersonaleEsterno:ID2189 , unitaDiPersonaleEsterno:ID14391 , unitaDiPersonaleInterno:MATRICOLA6558 .