Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.1636820 (literal)

Alternative label

• T. Hackbarth(a); H.-J. Herzog(a); K.-H. Hieber(a); U. König(a); M. Bollani(b); D. Chrastina(c); H. von Känel(c); (2003)
  Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition
  in Applied physics letters; AMER INST PHYSICS, MELVILLE, NY 11747-4501 USA (Stati Uniti d'America)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• T. Hackbarth(a); H.-J. Herzog(a); K.-H. Hieber(a); U. König(a); M. Bollani(b); D. Chrastina(c); H. von Känel(c); (literal)

Pagina inizio

• 5464 (literal)

Pagina fine

• 5466 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://scitation.aip.org/content/aip/journal/apl/83/26/10.1063/1.1636820 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 83 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 26 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• a DaimlerChrysler AG, Research and Technology, 89081 Ulm, Germany b INFM and L-NESS, Dipartimento Scienza dei Materiali, University Milano Bicocca, I-20125 Milano, Italy c INFM and L-NESS Dipartimento di Fisica, Politecnico di Milano, Polo Regionale di Como, I-22100 Como, Italy (literal)

Titolo

• Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition (literal)

Abstract

• This letter reports on the electrical performance of strained Si-based n-type heterostructure field-effect transistors prepared on 500 nm Si0.56Ge0.44 virtual substrates. The method of low-energy plasma-enhanced chemical vapor deposition at low temperature was used for the growth of the relaxed SiGe buffer. The active layers have been deposited by molecular-beam epitaxy. The thin buffer improves the thermal conductivity by a factor of 3 and shows a much lower surface roughness compared to control structures on conventional virtual substrate with a 5-mum-thick graded buffer. Cutoff frequencies of f(T)=55 GHz and f(max)(U)=138 GHz have been achieved which are very close to the results of the control sample. (literal)

Editore

• AMER INST PHYSICS (Editore)

Prodotto di

• Istituto di fotonica e nanotecnologie (IFN) (Istituto)

Autore CNR

• MONICA BOLLANI (Persona)

Insieme di parole chiave

• Parole chiave di "Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition" (Insieme di parole chiave)

Incoming links:

Prodotto

• Istituto di fotonica e nanotecnologie (IFN) (Istituto)

Autore CNR di

• MONICA BOLLANI (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Editore di

• AMER INST PHYSICS (Editore)

Insieme di parole chiave di

• Parole chiave di "Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition" (Insieme di parole chiave)