Temperature Dependent Reaction of Thin Ni-Silicide Transrotational Layers on [001]Si (Contributo in atti di convegno)

Type
Label
  • Temperature Dependent Reaction of Thin Ni-Silicide Transrotational Layers on [001]Si (Contributo in atti di convegno) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/RTP.2007.4383835 (literal)
Alternative label
  • Alberti A.; Bongiorno C.; Alippi P.; La Magna A.; Spinella C.; Rimini E. (2007)
    Temperature Dependent Reaction of Thin Ni-Silicide Transrotational Layers on [001]Si
    in 15th International Conference on Advanced Thermal Processing of Semiconductors, 2007 (RTP 2007), Catania, 2-5 Oct. 2007
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Alberti A.; Bongiorno C.; Alippi P.; La Magna A.; Spinella C.; Rimini E. (literal)
Pagina inizio
  • 151 (literal)
Pagina fine
  • 153 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • The phase transition from pure Ni to Ni2Si and NiSi was studied by in situ Transmission Electron Microscopy analyses from room temperature to 260 C. The reaction starts at 180 C with the formation of small Ni2Si transrotational domains. Their density and size increase by increasing the annealing temperature to 260 C. After 50 min, a uniform transrotational NiSi layer is formed by a grain by grain transition process. A polycrystalline NiSi layer was instead obtained at 550 C. It was concluded that the final layer structure is the result of a competition: at low temperature (260 C) transrotational domains prevails since slow structural modifications allow the match between silicide and silicon during the Ni2Si - NiSi phase transition; at high temperature (550 C), the growth of randomly oriented silicide grains is favoured. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania (literal)
Titolo
  • Temperature Dependent Reaction of Thin Ni-Silicide Transrotational Layers on [001]Si (literal)
Abstract
  • The phase transition from pure Ni to Ni2Si and NiSi was studied by in situ Transmission Electron Microscopy analyses from room temperature to 260 C. The reaction starts at 180 C with the formation of small Ni2Si transrotational domains. Their density and size increase by increasing the annealing temperature to 260 C. After 50 min, a uniform transrotational NiSi layer is formed by a grain by grain transition process. A polycrystalline NiSi layer was instead obtained at 550 C. It was concluded that the final layer structure is the result of a competition: at low temperature (260 C) transrotational domains prevails since slow structural modifications allow the match between silicide and silicon during the Ni2Si - NiSi phase transition; at high temperature (550 C), the growth of randomly oriented silicide grains is favoured. (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
data.CNR.it