Cr-assisted metal induced crystallization and nanostructuring of a-Si thin films (Comunicazione a convegno)

Type
Label
  • Cr-assisted metal induced crystallization and nanostructuring of a-Si thin films (Comunicazione a convegno) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • Md. Ahamad Mohiddon, K. Lakshun Naidu, G. Dalba, F. Rocca, M. Ghanashyam Krishna (2011)
    Cr-assisted metal induced crystallization and nanostructuring of a-Si thin films
    in TACT 2011 International Thin Films Conference, Organizzato da Taiwan Association for Coating and Thin Film Technology, Taiwan (TW)
    (literal)
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  • Md. Ahamad Mohiddon, K. Lakshun Naidu, G. Dalba, F. Rocca, M. Ghanashyam Krishna (literal)
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  • A study on nanocomposite thin films containing Cr, obtained by metal induced crystallization (MIC) of amorphous Silicon films, is reported. The growth process involves the deposition of 50 nm thick Cr films on fused silica substrates followed by a further deposition of 400 nm thick amorphous Si films at different substrate temperatures. X-ray Absorption studies (XAS) were carried out at Cr K-edge at BM08 GILDA Beamline of ESRF (F) for two samples deposited at 200 and 500 °C. Total reflection and standard 45° incidence geometry were selected to monitor the evolution of the local structure around Cr from bottom to the top of the a-Si film. The analysis of EXAFS detected in normal geometry indicates that the film deposited at 200 °C contains mostly unreacted metallic Cr, with only a small part being oxidized. In the film deposited at 500 °C, metallic Cr is absent, while the film contains at most Cr2O3 and a very small part of CrSi2. No fluorescence signal from Cr was detectable in total reflection: this observation suggests that, even at 500 °C deposition temperature, Cr does not reach the top of a 400 nm tick a-Si layer. We report also on Micro Raman investigations on a series of films deposited at different temperature starting from 200 to 500 °C. It is observed that a-Si contribution is dominant in all the samples over the Cr2O3 and CrSi2 signals. This observation confirms that when Cr is buried under the a-Si layer it is unable to diffuse and reach the top of the 400 nm a-Si film even at 500 °C deposition temperature. However a precise analysis carried by subtracting the Raman signal of a-Si film, shows new interesting features: a broad and diffuse peak around 300 cm-1 and a sharp peak around 480 cm-1 are found to grow with increasing deposition temperature. The peak at 480 cm-1 clearly documents the growing of Si crystallization, while the broad band at 300 cm-1 can be assigned to both Cr2O3 and CrSi2 (literal)
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  • Comunicazione Poster a congresso internazionale (literal)
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  • Book of Abstract: - Symposium B: Nanostructured and nanocomposite coatings Poster:B-114 (literal)
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  • Francesco Rocca] IFN-CNR, Istituto di Fotonica e Nanotecnologie, UoSs di Trento ”FBK-Photonics”, I-38123 Povo (Trento), Italy; [Giuseppe Dalba] Dipartimento di Fisica dell'Università di Trento,Via Sommarive 14, I-38123 Povo (Trento); [Md. Ahamad Mohiddon, K Lakshun Naidu, M Ghanashyam Krishna] School of Physics, University of Hyderabad, Hyderabad-500046, India (literal)
Titolo
  • Cr-assisted metal induced crystallization and nanostructuring of a-Si thin films (literal)
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