Profilo personale
Roberto Mosca
Le informazioni pubblicate in questa pagina sono gestite in completa autonomia da ROBERTO MOSCA il/la quale se ne assume ogni responsabilità
Prodotti della ricerca
Nasi L.; Calestani D.; Mezzadri F.; Mariano F.; Listorti A.; Ferro P.; Mazzeo M.; Mosca R.
All-Inorganic CsPbBr3 Perovskite Films Prepared by Single Source Thermal Ablation
(2020) in Frontiers in Chemistry
De Marco L.; Calestani D.; Qualtieri A.; Giannuzzi R.; Manca M.; Ferro P.; Gigli G.; Listorti A.; Mosca R.
Single crystal mesoporous ZnO platelets as efficient photoanodes for sensitized solar cells
(2017) in Solar energy materials and solar cells
Tommasi, Alessio; Cocuzza, Matteo; Perrone, Denis; Pirri, Candido Fabrizio; Mosca, Roberto; Villani, Marco; Delmonte, Nicola; Zappettini, Andrea; Calestani, Davide; Marasso, Simone Luigi
Modeling, fabrication and testing of a customizable micromachined hotplate for sensor applications
(2017) in Sensors (Basel)
S L Marasso1,2, A Tommasi2, D Perrone3, M Cocuzza1,2, R Mosca1, M Villani1, A Zappettini1 and D Calestani1
A new method to integrate ZnO nano-tetrapods on MEMS micro-hotplates for large scale gas sensor production
(2016) in Nanotechnology (Bristol. Print)
Roberto Mosca1, Lucia Nasi1, Davide Calestani1, Patrizia Ferro1, Andrea Zappettini1, Tullo Besagni1, Gianluca Calestani1,2, Paola Ceroni3
On the origin of 1.7 eV PL peak in mixed I/Br organolead perovskites
(2016) 2nd International Conference on Perovskite Solar Cells and Optoelectronics, Genova (Italia), 26-28 September 2016
Roberto Mosca1, Lucia Nasi1, Davide Calestani1, Patrizia Ferro1, Andrea Zappettini1, Tullo Besagni1, Gianluca Calestani1,2, Paola Ceroni3
Influence of the bromide content on the properties of CH3NH3PbI(3-x)Brx perovskite films
(2016) Materials.it 2016 - Materials Science and Technology, Catania (Italy), December 12 - 16, 2016
Fedeli P.(1), Calestani D.(1), Villani M(1)., Ferro P.(1), Besagni T.(1), Zappettini A.(1), Hubik P.(2), Mosca R.(1)
Charge transport in layers of ZnO nanotetrapods and porous nanosheets comparatively investigated by impedance spectroscopy measurements
(2015) 101° Congresso Nazionale della Società Italiana di Fisica, Roma, 21-25 settembre 2015
Fedeli P.; Gazza F.; Calestani D.; Ferro P.; Besagni T.; Zappettini A.; Calestani G.; Marchi E.; Ceroni P.; Mosca R.
Influence of the Synthetic Procedures on the Structural and Optical Properties of Mixed-Halide (Br, I) Perovskite Films
(2015) in Journal of physical chemistry. C
Athanasios Tamvakos, Davide Calestani, Dimitrios Tamvakos, Roberto Mosca, Daniele Pullini, Alina Pruna
Effect of grain-size on the ethanol vapor sensing properties of room-temperature sputtered ZnO thin films
(2015) in Mikrochimica acta (1953)
Agostino Romeo, Giuseppe Tarabella, Pasquale D'Angelo, Nicola Coppedè, Francesca Rossi, Roberto Mosca, Salvatore Iannotta
DETECTION OF NANO-STRUCTURED PARTICLES WITH ORGANIC ELECTRCHEMICAL TRANSISTORS
(2015) European-Materials-Research-Society Spring Meeting Symposium S on Memristor Materials, Mechanisms and Devices for Unconventional Computing, Lille, France, JUL 26-30, 2014
G Baldi1, S Battistoni1,4, G Attolini1, M Bosi1, C Collini3, S Iannotta1, L Lorenzelli3, R Mosca1, J S Ponraj1, R Verucchi2 and V Erokhin1
Logic with memory: and gates made of organic and inorganic memristive devices
(2014) in Semiconductor science and technology (Online)
Calestani D.; Villani M.; Mosca R.; Lazzarini L.; Coppede N.; Dhanabalan S.C.; Zappettini A.
Selective response inversion to NO2 and acetic acid in ZnO and CdS nanocomposite gas sensor
(2014) in Nanotechnology (Bristol. Print)
Pasquale D' Angelo, Nicola Coppedè, Giuseppe Tarabella, Agostino Romeo,
Francesco Gentile, Salvatore Iannotta , Enzo Di Fabrizio, Roberto Mosca
LIQUID ELECTROLYTE POSITIONING ALONG THE DEVICE CHANNEL INFLUENCES THE OPERATION OF ORGANIC ELECTROCHEMICAL TRANSISTORS
Pasquale D' Angelo, Nicola Coppedè, Giuseppe Tarabella, Agostino Romeo,
(2014) in Organic electronics (Print)
Sozzi, G.; Mosca, R.; Calicchio, M.; Menozzi, R.
Anomalous dark current ideality factor (n > 2) in thin-film solar cells: the role of grain-boundary defects
(2014) Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, JUN 08-13, 2014
Silvia Colella(a), Andrea Listorti(a, b), Aurora Rizzo(a), Edoardo Mosconi(c), Paolo Fedeli(d), Francesco
Gazza(d), Fabio Orlandi(d, e), Patrizia Ferro(d), Tullo Besagni(d), Gianluca Calestani(d, e), Filippo De
Angelis(c), Roberto Mosca(d), Giuseppe Gigli(a, b, f)
MAPbI3-xClx Mixed Halide Perovskite for Hybrid Solar Cells: the Role of Chloride as Dopant on the Transport and Structural Properties
Silvia Colella(a), Andrea Listorti(a, b), Aurora Rizzo(a), Edoardo Mosconi(c), Paolo Fedeli(d), Francesco
Gazza(d), Fabio Orlandi(d, e), Patrizia Ferro(d), Tullo Besagni(d), Gianluca Calestani(d, e), Filippo De
(2014) 6th International Conference on Hybrid and Organic Photovoltaics, Losanna (CH), 11-14 May 2014
Paolo Fedeli(a), Francesco Gazza(a, b), Davide Calestani(a), Patrizia Ferro(a), Tullo Besagni(a), Enrico
Marchi(b), Paola Ceroni(b), Roberto Mosca(a)
Influence of the synthesis parameters on the properties of organolead mixed halide perovskites
Paolo Fedeli(a), Francesco Gazza(a, b), Davide Calestani(a), Patrizia Ferro(a), Tullo Besagni(a), Enrico
(2014) 6th International Conference on Hybrid and Organic Photovoltaics, Losanna (CH), 11-14 May 2014
Silvia Colella1, Andrea Listorti1 4, Edoardo Mosconi2, Filippo De Angelis2, Roberto Mosca3, Paolo Fedeli3, Francesco Gazza3, Fabio Orlandi3 5, Gianluca Calestani3 5, Patrizia Ferro3, Tullo Besagni3, Aurora Rizzo1, Giuseppe Gigli1 4 6.
MAPbI3-xClx Mixed Halide Perovskite for Hybrid Solar Cells: the Role of Chloride as Dopant on the Transport and Structural Properties
(2014) 2014 MRS Spring Meeting & Exhibit. Symposium B: Organic and Inorganic Materials for Dye-Sensitized Solar Cells, San Francisco, CA, USA, 21-25/04/2014
G. Baldi1, M. Bosi1, G. Giusti2, G. Attolini1, T. Berzina1, C. Collini3, L. Lorenzelli3, R. Mosca1, P. Nozar2, J. S. Ponraj1, T. Toccoli2, R. Verucchi2, and S. Iannotta1
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications
(2014) ICNAAM 2014 Conference, Symposium: Adaptive Materials, Devices and Systems Towards Unconventional Computing and Robotics: Modeling and Implementation, Rhodes, 24-28/09/2014
L. Nasi, D. Calestani, F. Fabbri, P. Ferro, T. Besagni, P. Fedeli, F. Licci, R. Mosca
Mesoporous single-crystal ZnO nanobelts: Supported preparation and patterning
(2013) in Nanoscale (Print)
G. Tarabella, A.G. Balducci, N. Coppedè, S. Marasso, P. D'Angelo, S. Barbieri, M. Cocuzza, P. Colombo, F. Sonvico, R. Mosca, S. Iannotta
Liposome sensing and monitoring by organic electrochemical transistors integrated in microfluidics
(2013) in Biochimica et biophysica acta. G, General subjects (Print)
Nicola Coppedè, Marco Villani, Roberto Mosca, Salvatore Iannotta, Andrea Zappettini and Davide Calestani
Low Temperature Sensing Properties of a Nano Hybrid Material Based on ZnO Nanotetrapods and Titanyl Phthalocyanine
(2013) in Sensors (Basel)
Colella S.1, Mosconi E.2, Fedeli P.3, Listorti A.1,4 , Gazza F.3,7, Orlandi F.3,5, Ferro P.3, Besagni T.3, Rizzo A.1, Calestani G.3,5, Gigli G.1,4,6, De Angelis F.2 , Mosca R.3
MAPbI3-xClx mixed halide perovskite for hybrid solar cells: The role of chloride as dopant on the transport and structural properties
(2013) in Chemistry of materials
Tarabella, G.1 , Pezzella, A.2 , Romeo, A.1, D'Angelo, P.1, Coppedè, N.1, Calicchio, M.1, D'Ischia, M.2, Mosca, R.1, Iannotta, S.1
Irreversible evolution of eumelanin redox states detected by an organic electrochemical transistor: en route to bioelectronics and biosensing
(2013) in Journal of Materials Chemistry B
Paolo Fedeli1, Francesco Gazza1,2, Davide Calestani1, Lucia Nasi1, Patrizia Ferro1, Tullo Besagni1, Pavel Hubik3, Gianluca Calestani2,4 Paola Ceroni2,Roberto Mosca,1
Organolead halide perovskites for all-solid-state sensitised solar cells
(2013) Italian Crystal Growth 2013, Parma, 14-15 novembre 2013
P. Fedeli1, L. Nasi1, B. Branchi1, D. Calestani1, F. Gazza1,2, F. Orlandi3, T. Besagni1, P. Ferro1, R. Mosca1
Mesoporous ZnO nanocrystals: preparation and functionalization by hybrid organic-inorganic perovskites
(2013) International Summer School "Nanostructured Hybrid Materials for Energy Devices: From experiment to modeling", Granada (Spain), 9-12/06/2013
L. Nasi, D. Calestani, T. Besagni, P. Ferro, F. Fabbri, P. Fedeli, F. Licci, R. Mosca
Monocrystalline porous ZnO nanostructures from organic-inorganic hybrid precursors: formation processes and patterning
(2013) MAMA-Hybrids - Multifunctional Hybrids And Organics, Ischia (NA), 22-24/10/2012
S. Iannotta, L. Aversa, P. D'Angelo, R. Mosca, G. Tarabella, T. Toccoli, M. Tonezzer, R. Verucchi
From Growth Studies to Devices: organic and nano - hybrid structure synthesis by kinetic activated processes
(2013) 6 th International Symposium on Flexible Organic Electronics (ISFOE13), Thessaloniki, Greece, 8 - 11 July 2013
Davide Calestani, Marco Villani, Nicola Coppedè, Dhanabalan Sathish Chander, Laura Lazzarini, Roberto Mosca, Andrea Zappettini
Beyond ZnO nanostructure properties: surface functionalization as the key for different applications.
(2013) E-MRS Fall Meeting 2013, Varsavia, POLONIA, 16-20/09/2013
G.Tarabella1, A. Romeo1, P. D'Angelo1, N.Coppedè1, R. Mosca1, A. Pezzella2, M. d'Ischia2, S. Iannotta1
OECT-based Devices as a Tool for Monitoring Redox States and Dynamics of Melanins
(2013) EuMelaNet is an Interest Group within the European Society of Pigment Cell Research, at 18th Meeting of the European Society for Pigment Cell Research (ESPCR2013), Lisbon (Portugal), 9-12/09/2013
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati ceramici per uso fotovoltaico della ditta Marazzi Group S.p.a serie 7
(2013)
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati ceramici per uso fotovoltaico della ditta Marazzi Group S.p.a serie 6
(2013)
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati cementizi per uso fotovoltaico della ditta CTG S.p.a serie 6
(2013)
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati cementizi per uso fotovoltaico della ditta CTG S.p.a serie 5
(2013)
Villani Marco; Calestani Davide; Lazzarini Laura; Zanotti Lucio; Mosca Roberto; Zappettini Andrea
Extended functionality of ZnO nanotetrapods by solution-based coupling with CdS nanoparticles
(2012) in Journal of materials chemistry (Print)
Rampino S., Armani N., Bissoli F., Bronzoni M., Calestani D., Calicchio M., Delmonte N., Gilioli E., Gombia E., Mosca R., Nasi L., Pattini F., Zappettini A., Mazzer M.
15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition
(2012) in Applied physics letters
Tarabella G.; Villani M.; Calestani D.; Mosca R.; Iannotta S.; Zappettini A.; Coppedè N.
A single cotton fiber organic electrochemical transistor for liquid electrolyte saline sensing
(2012) in Journal of materials chemistry (Print)
Giuseppe Tarabella a, Gaurav Nanda b, Marco Villani a, Nicola Coppedè a, Roberto Mosca a, George G. Malliaras c, Clara Santato b, Salvatore Iannotta a, Fabio Cicoira d
Organic electrochemical transistors monitoring micelle formation
(2012) in Chemical science (Camb. 2010. Print)
Lucia Nasi, Davide Calestani, Tullo Besagni, Patrizia Ferro, Filippo Fabbri, Francesca Licci, Roberto Mosca
ZnS and ZnO Nanosheets from ZnS(en)0.5 Precursor: Nanoscale Structure and Photocatalytic Properties
(2012) in Journal of physical chemistry. C
Giuseppe Tarabella, Nicola Coppedè, Roberto Mosca, Fabio Cicoira, Salvatore Iannotta
Organic electrochemical transistors operating with electrolytes of increasing complexity for (Bio)sensing
(2012) in AIP conference proceedings
S. Rampino, M. Baldini, F. Bissoli, M. Bronzoni, M. Calicchio, E. Gilioli, E. Gombia, M. Mazzer, R. Mosca, F. Pattini, M. Stefancich
Single-Stage Fabrication of Cu(In,Ga)Se2 Solar Cells by a Novel Route Based on Pulsed Electron Deposition
(2012) 27th European Photovoltaic Solar Energy Conference and Exhibition, Frankfurt - Germany, 24-28 Settembre 2012
S. Rampino, F. Bissoli, M. Bronzoni, M. Calicchio, M. Mazzer, R. Mosca, F. Pattini, M. Stefancich, E. Gilioli
Fabrication of Cu(In,Ga)Se2 solar cells by a novel single-stage route based on Pulsed Electron Deposition (PED)
(2012) E-MRS Spring 2012 - Symposium B??, Strasbourg - France, 14-18 Maggio 2012
Cocuzza Matteo, Marasso Simone, Perrone Denis, Mombello Domenico, Tommasi Alessio, Zappettini Andrea, Mosca Roberto, Calestani Davide, Ricci Alessandro
Integration of ZnO nano-tetrapods onto a micro hot plate structure for H2S sensing
(2012) 38th International Micro & Nano Engineering Conference (MNE 2012), Toulouse, France, 16-20/09/2012
G. Tarabella, A.G. Balducci, S. Barbieri, N. Coppedè, F. Cicoira, R. Mosca, P. Colombo, F. Sonvico, S. Iannotta.
Real time sensing of drug-loaded Lecithin Liposomes by Organic Electrochemical Transistors
(2012) American Association of Pharmaceutical Scientists (AAPS) Annual Meeting and Exposition, Chicago (USA), October 14-18, 2012
Giuseppe Tarabella, Agostino Romeo, Marco Villani, Gaurav Nanda, Nicola Coppedè, Roberto Mosca, Clara Santato, Fabio Cicoira, Salvatore Iannotta
Organic electrochemical transistors applications in sensing and biosensing
(2012) E-MRS 2012 Spring Meeting, Strasbourg, May 14-18, 2012
G. Tarabella, A. Romeo, N. Coppedè, M. Calicchio, F. Cicoira, R. Mosca, S. Iannotta
Sensing applications based on Organic Electrochemical Transistors
(2012) International Conference on Solid Films and Surfaces (ICSFS16), Genova (Italy)., July 1-6, 2012
Nicola Coppedè, Marco Villani, Roberto Mosca, Laura Lazzarini, Salvatore Iannotta, Andrea Zappettini and Davide Calestani
Selective Functionalization of ZnO nanostructure for electronic, gas sensing and photovoltaic application
(2012) 7th International Workshop on Zinc Oxide and Related Materials, nizza, September 11 - 14
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati cementizi per uso fotovoltaico della ditta CTG S.p.a serie 4
(2012)
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati ceramici per uso fotovoltaico della ditta Marazzi Group S.p.a serie 4
(2012)
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati ceramici per uso fotovoltaico della ditta Marazzi Group S.p.a serie 5
(2012)
Calestani Davide; Mosca Roberto; Zanichelli Massimiliano; Villani Marco; Zappettini Andrea
Aldehyde detection by ZnO tetrapod-based gas sensors
(2011) in Journal of materials chemistry (Print)
R. Mosca 1, P. Ferro 1, T. Besagni 1, D. Calestani 1, F. Chiarella 2, F. Licci 1
Effect of humidity on the a.c. impedance of CH(3)NH(3)SnCl(3) hybrid films
(2011) in Applied physics. A, Materials science & processing (Print)
Zappettini, Andrea 1, Marchini, Laura 1, Zha, Mingzheng 1, Benassi, Giacomo 1, Zambelli, Nicola 1, Calestani, Davide 1, Zanotti, Lucio 1, Gombia, Enos 1, Mosca, Roberto 1, Zanichelli, Massimiliano 2, Pavesi, Maura 2, Auricchio, Natalia 3, Caroli, Ezio 3
Growth and characterization of CZT crystals by the vertical Bridgman method for X-Ray detector applications
(2011) in IEEE transactions on nuclear science
Mosca, Roberto, Ferro, Patrizia, Calestani, Davide, Nasi, Lucia, Besagni, Tullo, Licci, Francesca
Solvothermal synthesis of ZnS[C(2)H(4)(NH(2))(2)](0.5) nanosheets
(2011) in Crystal Research and Technology
G. Tarabella, F. Cicoira, N. Coppedè, C. Santato, S.Y. Sang, R. Mosca, G.G. Malliaras, S. Iannotta.
Organic electrochemical transistors applied in biosensing
(2011) The 6th International Conference on Microtechnologies in Medicine and Biology (MMB 2011), Lucerne (Switzerland), May 4-6, 2011
Calestani Davide, Villani Marco, Lazzarini Laura, Mosca Roberto, Zappettini Andrea
Functionalization of ZnO Nanostructures by CdS Nanoparticles: Effects on Functional Properties
(2011) MRS Fall Meeting 2011, Boston, USA, 28/11/2011-02/12/2011
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati ceramici per uso fotovoltaico della ditta Marazzi Group S.p.a serie 3
(2011)
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati cementizi per uso fotovoltaico della ditta CTG S.p.a serie 2
(2011)
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati cementizi per uso fotovoltaico della ditta CTG S.p.a serie 3
(2011)
Calestani D. a; Zha M. a; Mosca R. a; Zappettini A. a; Carotta M.C. bc; Di Natale V. bc; Zanotti L. a
Growth of ZnO tetrapods for nanostructure-based gas sensors
(2010) in Sensors and actuators. B, Chemical (Print)
Mosca R.; Calestani D.; Zha M.; Zappettini A.; Zanichelli M.; Zanotti L.
Enhanced aldehydes detection by ZnO nano-tetrapod based gas sensors
(2010) X International Conference on Nanostructured Materials, Roma
Zappettini A.; Marchini L.; Zha M.; Zambelli N.; Calestani D.; Zanotti L.; Mosca R.; Gombia E.; Zanichelli M.; Pavesi M.; Auricchio N.; Caroli E.
Growth and characterization of CZT crystals by the vertical Bridgman method for X-ray detector applications
(2010) IEEE 2010 NSS/MIC/RTSD, Knoxville, Tennessee, USA
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati ceramici per uso fotovoltaico della ditta Marazzi Group S.p.a serie 2
(2010)
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati cementizi per uso fotovoltaico della ditta CTG S.p.a serie 1
(2010)
"Marco Calicchio";"Roberto Mosca"
Analisi delle proprietà superficiali di substrati ceramici per uso fotovoltaico della ditta Marazzi Group S.p.a serie 1
(2010)
Marchini L.1; Zappettini A.1; Gombia E.1; Mosca R.1; Lanata M.2; Pavesi M.3
Study of Surface Treatment Effects on the Metal-CdZnTe Interface
(2009) in IEEE transactions on nuclear science
Rimada J.; Prezioso M.; Nasi L.; Gombia E.; Mosca R.; Trevisi G.; Seravalli L.; Frigeri P.; Bocchi C.; Franchi S.
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
(2009) in Materials science & engineering. B, Solid-state materials for advanced technology
Trevisi G.; Seravalli L.; Frigeri P.; Prezioso M.; Rimada Herrera J. C.; Gombia E.; Mosca R.; Nasi L.; Bocchi C.; Franchi S.
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
(2009) in Microelectronics
Calestani D.; Zha M.; Mosca R.; Lazzarini L.; Salviati G.; Zappettini A.; Zanotti L.
The challenge for large-scale vapor-phase growths of not-catalyzed ZnO nanostructures: purity vs. yield
(2009) in Materials Research Society symposia proceedings
Hastas N. A.; Dimitriadis C.; Gombia E.; Frigeri P.; Franchi S.; Mosca R.
Investigation of generation-recombination centres of Au/n-GaAs Schottky diodes with InAs self-assembled quantum dots
(2009) in Materials science & engineering. B, Solid-state materials for advanced technology
Zappettini A. a; Zha M. a; Marchini L. a; Calestani D. a; Mosca R. a; Gombia E. a; Zanotti L. a; Zanichelli M. b; Pavesi M. b; Auricchio N. cd; Caroli E. d
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-Ray Detector Material
(2009) in IEEE transactions on nuclear science
Zanotti L.; Zha M.; Calestani D.; Mosca R.; Zappettini A.
Growth mechanisms of tin oxide and zinc oxide nanostructures from vapour phase
(2009) Workshop on Sychrotron Radiation and Nanostructures, Singapore
Ferro P.; Mosca R.; Besagni T.; Calestani D.; Zappettini A.; Zha M.; Iannotta S.; Nardi M.; Toccoli T.; Mares J.; Hubík P.; Kristofik J.; Licci F.
Sensitization of SnO2 and ZnO nanostructures by CH3NH3SnCl3 hybrid particles
(2009) Associazione Italiana di Cristallografia, 38° Congresso Nazionale, Salerno
Zanotti L.; Zappettini A.; Villani M.; Calestani D.; Mosca R.
A new approach for the synthesis of ZnO nanoparticles sensitized with metal chalcogenides
(2009) XXXVIII Congresso Nazionale dell'Associazione Italiana di Cristallografia, Salerno
Mosca R.; Licci F.; Ferro P.; Besagni T.; Calestani D.; Zappettini A.; Zha M.; Iannotta S.; Nardi M.; Toccoli T.
Vacuum ablation of CH3NH3SnCl3 Hybrid Perovskite: a tool for the sensitization of Metal Oxide Nanostructures
(2009) Associazione Italiana di Scienza e Tecnologia, XIX Congresso AIV, Senigallia (AN), 19-21 maggio 2009
Mosca R.; Licci F.; Ferro P.; Besagni T.; Calestani D.; Zappettini A.; Zha M.; Iannotta S.; Nardi M.; Toccoli T.
Sensitization of Metal Oxide Nanostructures by CH3NH3SnCl3 Hybrid Perovskite
(2009) First International Conference on Multifunctional, Hybrid and Nanomaterials, Tours (France)
Mosca R.; Ferro P.; Besagni T.; Calestani D.; Chiarella F.; Licci F.
Influence of Ambient Humidityon The Conductivity of CH3NH3SnCl3 Hybrid Films
(2009) First International Conference on Multifunctional, Hybrid and Nanomaterials, Tour (France)
Marchini L.; Zappettini A.; Gombia E.; Mosca R.; Pavesi M.
Study of surface treatment effects on the metal-CdZnTe interface
(2008) in Proceedings of the IEEE
Zappettini A.; Zha M.; Marchini L.; Calestani D.; Mosca R.; Gombia E.; Zanotti L.; Zanichelli M.; Pavesi M.; Auricchio N.; Caroli E.
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material
(2008) in Proceedings of the IEEE
Zha M.; Calestani D.; Zappettini A.; Mosca R.; Mazzera M.; Lazzarini L.; Zanotti L.
Large-area self-catalysed and selective growth of ZnO nanowires
(2008) in Nanotechnology (Bristol. Print)
Nasi L.; Bocchi C.; Germini F.; Prezioso M.; Gombia E.; Mosca R.; Frigeri P.; Trevisi G.; Seravalli L.; Franchi S.
Defects in nanostructures with ripened InAs/GaAs quantum dots
(2008) in Journal of materials science. Materials in electronics
Calestani D.; Zha M.; Mosca R.; Zappettini A.; Carotta M. C.; Di Natale V.; Zanotti L.
Growth of ZnO tetrapods for gas sensor application
(2008) Eurosensors XXII, Dresden (Germany)
Rimada Herrera J. C.; Prezioso M.; Nasi L.; Gombia E.; Mosca R.; Trevisi G.; Seravalli L.; Frigeri P.; Bocchi C.; Franchi S.
Electrical and structural characterization of InAs/InGaAs quantum dot structures
(2008) 9TH International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, Lodz (Poland)
Marchini L.; Zappettini A.; Gombia E.; Mosca R.; Pavesi M.
Study of Surface Treatment Effects on the Metal-CdZnTe Interface
(2008) 16th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray Detectors, Dresden (Germany)
Calestani D.; Zha M.; Zappettini A.; Mosca R.; Lazzarini L.; Salviati G.; Zanotti L.
Growth And Characterization Of ZnO Nanostructures By A Self-Catalythic CVD Process
(2008) 1st SIMP-AIC Joint Meeting, Sestri Levante (GE)
Mosca R.; Ferro P.; Besagni T.; Zappettini A.; Licci F.
Film deposition, X-ray diffraction and optical absorption of novel (R-NH3)2ZnCl4 hybrid perovskites
(2008) Learning From And For The Placet Earth-Structures And Models In Earth, Materials And Life Science, Sestri Levante (GE)
Zappettini A.; Zha M.; Marchini L.; Calestani D.; Mosca R.; Gombia E.; Zanichelli M.; Pavesi M.; Auricchio N.
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material
(2008) 16th International Workshop on Room Temperature Semiconductor X-Ray and Gamma-Ray Detectors, Dresden (Germany)
Trevisi G.; Seravalli L.; Frigeri P.; Prezioso M.; Rimada Herrera J. C.; Gombia E.; Mosca R.; Nasi L.; Bocchi C.; Franchi S.
The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission
(2008) Workshop on Recent Advances of Low Dimensional Structures and Devices, Nottingham, UK
Calicchio M.; Calestani D.; Zappettini A.; Mosca R.
Realizzazione di maschere per evaporazioni
(2008)
Frigeri P.; Nasi L.; Prezioso M.; Seravalli L.; Trevisi G.; Gombia E.; Mosca R.; Germini F.; Bocchi C.; Franchi S.
Effects of the quantum dot ripening in high-coverage InAs/GaAs nanostructures
(2007) in Journal of applied physics
Pavesi M., Zanichelli M., Gombia E., Mosca R., Marchini L., Zha M., Zappettini A., Caroli E., Auricchio N., Negri B.
CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method
(2007) in Proceedings of SPIE, the International Society for Optical Engineering
Chiarella F.1; Mosca R.1; Pavesi M.1,2; Zappettini A.1 Ferro P.1 Licci F.1
Enhanced luminescence of CuCl microcrystals in a organic-inorganic hybrid matrix
(2007) in Applied physics. A, Materials science & processing (Print)
Nasi L., Bocchi C., Germini F. Prezioso M., Gombia E., Mosca R., Frigeri P., Trevisi G., Seravalli L., Franchi S.
Defects in nanostructures with ripened InAs/GaAs quantum dots
(2007) 12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIPXII), Berlin (D)
Mosca R., Chiarella F., Pavesi M., Zappettini A., Ferro P., Besagni T., Licci F.
Enhanced luminescence of CuCl microcrystals dispersed in a hybrid organic-inorganic matrix.
(2007) XCIII Congresso Nazionale della Societa' Italiana di Fisica, Pisa
Zha M., Calestani D., Zappettini A., Mosca R., Zanotti L.
Large-scale selective and not catalyzed growth of ZnO nanowires on alumina substrates
(2007)
Calestani D., Morandi S., Ghiotti G., Mosca R., Zappettini A.
FT-IR and electrical characterization of tin-oxide nanowires
(2007)
Pavesi M., Zanichelli M., Gombia E., Mosca R., Marchini L., Zha M., Zappettini A., Caroli E., Auricchio N., Negri B.
CZT X-rays detectors obtained by the boron oxide encapsulated vertical Bridgman method
(2007)
Frigeri P., Seravalli L., Trevisi G., Bocchi C., Germini F., Nasi L., Gombia E., Mosca R., Prezioso M., Franchi S.
Nanostrutture a punti quantici per comunicazioni su fibra ottica
(2007) Workshop, Roma
Gombia E., Mosca R. , Prezioso M.
Electrical characterization of InAs/GaAs QD structures
(2007) SANDIE Transport Taskforce Meeting, Berlin (D)
Mosca R., Zha M., Calestani D., Lazzarini L., Salviati G., Zappettini A., Zanotti L., Comini E., Sberveglieri G.
On the role of Oxygen Vacancies in the determination of the gas-sensing properties of Tin-Oxide nanowires
(2006) in Materials Research Society symposia proceedings
Tsormpatzoglou A. (a); Tassis D. H.(a); Dimitriadis C. A.(a); Frigeri P.(b); Franchi S.(b); Gombia E.(b); Mosca R.(b)
Stress-induced local trap levels in Au/n-GaAs Schottky diodes with embedded InAs quantum dots
(2006) in IEEE electron device letters (Print)
Tsormpatzoglou A.1, Tassis D.H.1, Dimitriadis C.A.1, Kamarinos G.2, Frigeri P.3, Franchi S.3, Gombia E.3, Mosca R.3
Noise spectroscopy of localized states in Au/n-GaAs Schottky diodes containing InAs quantum dots
(2006) in Solid-state electronics
Gombia E. a; Mosca R. a; Franchi S. a; Frigeri P. a; Ghezzi C. b
Electrical characterization of InAs/GaAs quantum dot structures
(2006) in Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)
Prezioso M., Gombia E., Mosca R., Nasi L., Motta A., Frigeri P.,Trevisi G., Seravalli L., Franchi S.
Study of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM
(2006) in Proceedings of the IEEE
Calestani D., Zha M., Zappettini A., Zanotti L., Salviati G., Lazzarini L., Mosca R., Comini E., Sberveglieri G.
Study of the sensing properties of SnO2 nanowires by means of oxidation and reduction treatments
(2006) XI International Meeting of Chemical Sensors, Brescia
Calestani D., Zha M., Mosca R., Zappettini A., Mazzera M., Paorici C., Zanotti L.
Growth and Properties of Self-assembled Metal-Oxide Nanowires Grown by the Physical Vapour Transport Method
(2006) XXXV Congresso Nazionale della AIC (Associazione Italiana di Cristallografia), Ferrara
Calestani D., Zha M., Zanotti L., Zappettini A., Salviati G., Lazzarini L., Mosca R., Comini E., Sberveglieri G.
Effects of oxygen vacancies on the gas sensing detection and the physical properties of SnO2 nanowires
(2006) XI Conferenza Annuale AISEM, Lecce
Prezioso M., Nasi L., Gombia E., Mosca R., Frigeri P., Seravalli L., Trevisi G. e Franchi S.
Investigation of electrically active defects in GaAs/InAs/GaAs QDs structures by DLTS and TEM
(2006) XCII Congresso Nazionale Società Italiana di Fisica, Torino
Gombia E., Mosca R. e Prezioso M.
Electrical characterization of InAs/GaAs QD structures
(2006) SANDIE Transport Taskforce Meeting, Berlin
Zappettini A., Pavesi M., Chiarella F., Licci F., Ferro P., Besagni T., Mosca R.
Hybrid [CnH(2n+1)NH3]2CuCl4 Self-Assembled Films as Potential UV Emitters for LED Applications
(2006) MRS 2006 Spring Meeting, S. Francisco USA
Mosca R. Zanotti L.
Rapporto di medio termine per la partecipazione al Network Regionale MIST-ER
(2006)
Dozsa L.1, Horvath Zs.J.1, Gombia E.2, Mosca R.2, Franchi S.2, Frigeri P.2, Raineri V.3, Giannazo F.3
Instability and electrical characteristics of GaAs/InAs quantum dot structures
(2005) in Physica status solidi. C, Conferences and critical reviews
Cova P.1, Menozzi R.1, Portesine M.2, Bianconi M.3, Gombia E.4, Mosca R.4
Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications
(2005) in Solid-state electronics
Bocchi C., Felisari L., Catellani A., Cicero G., Germini F., Gombia E., Mosca R., Nasi L., Mukhamedzhanov E.K., Chuev M.A., Privitera V., Camalleri M., Cali D.
Structural and electrical investigation of high temperature annealed As-implanted Si crystals
(2005) in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
Tsormpatzoglou A.1; Hastas NA.1; Tassis DH.1; Dimitriadis CA.1; Kamarinos G.2; Frigeri P.3; Franchi S.3; Gombia E.3; Mosca R.3
Low-frequency noise spectroscopy in Au/n-GaAs Schottky diodes with InAs quantum dots
(2005) in Applied physics letters
Koutsouras D.A. a; Hastas N.A. a; Tassis D.H. a; Dimitriadis C.A. a; Frigeri P. b; Franchi S. b; Gombia E. b; Mosca R. b
Depth distribution of traps in Au/n-GaAs Schottky diodes with embedded InAs quantum dots
(2005) in Journal of applied physics
L. Dózsa1, A. L. Tóth1, Zs. J Horváth1, P. Hubík2, J. Kri?tofik2, J. J. Mare?2, E. Gombia3, R. Mosca3, S. Franchi3 and P. Frigeri3
Lateral conductivity in GaAs/InAs quantum dot structures
(2004) in EPJ. Applied physics (Print)
Hastas N.(a), Dimitriadis C.A.(a), Dozsa L.(b), Gombia E.(c), Mosca R.(c)
Investigation of single electron traps induced by InAs quantum dots embedded in GaAs layer using the low-frequency noise technique
(2004) in Journal of applied physics
Mosca R., Gombia E., Passaseo A., Tasco V., Peroni M., Romanini P.
DLTS characterization of silicon nitride passivated AlGaN/GaN heterostructures
(2004) in Superlattices and microstructures
Dubecky F.(a); Bohacek P.(a); Zatko B.(a); Sekacova M.(a); Huran J.(a); Smatko V.(a); Fornari R.(b); Gombia E.(c); Mosca R.(c); Pelfer P.G.(d)
Role of electron technology in radiation detector based on semi-insulating InP in development of detector array
(2004) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Zatko B. a; Dubecky F. a; Bohacek P. a; Gombia E. b; Frigeri P. b; Mosca R. b; Franchi S. b; Huran J. a; Necas V. c; Sekacova M. a; Forster A. d; Kordos P. d
On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs
(2004) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Gombia, E.a , Mosca, R.a, Pal, D.a, Busi, S.b, Tarricone, L.b, Fuochi, P.G.c, Lavalle, M.c
Preparation and characterization of Au/InGaP/GaAs Schottky barriers for radiation damage investigation
(2003) in Materials science & engineering. B, Solid-state materials for advanced technology
C. Ghezzi1, R. Magnanini1, A. Parisini1, E. Gombia2, and R. Mosca2
Effects of a resonant shallow state on the electrical properties of Te-doped AlxGa1-xSb
(2003) in Journal of applied physics
N. A. Hastas1, C. A. Dimitriadis1, L. Dozsa2, E. Gombia3, and R. Mosca3
Characterization of traps related to InAs quantum-dot growth-induced defects in GaAs by low-frequency noise measurements in reverse-biased Schottky diodes
(2003) in Journal of applied physics
Mosca R.1; Bussei P.1; Franchi S.1; Frigeri P.1; Gombia E.1; Carnera A.2; Peroni M.3
Be diffusion in molecular beam epitaxy-grown GaAs structures
(2003) in Journal of applied physics
Dózsa, L.1 , Horváth, Zs.J.1, Hubik, P.2, Kristofik, J.2, Mares, J.J.2, Gombia, E.3, Frigeri, P.3, Mosca, R.3, Franchi, S.3, Pécz, B.3, Dobos, L.1
Investigation of defects created by growth of InAs quantum dots in GaAs
(2003) in Physica status solidi. C, Current topics in solid state physics (Internet)
Amighetti S., Gombia E., Mosca R., Franchi S., Frigeri P., Ghezzi C.
Electrical characterization of self-assembled InAs/GaAs quantum dots by capacitance
(2003) INFMeeting 2003, National Conference on Physics of Matter, Genova
Mosca R. 1, Amighetti S. 1, Bussei P. 1, Franchi S. 1, Frigeri P. 1, Gombia E. 1, Carnera A. 2, Peroni M. 3
Diffusion of Be in MBE-GaAs structures
(2003) INFMeeting 2003, National Conference on Physics of Matter, Genova, 23/06/2003, 25/06/2003
Amighetti S., Gombia E., Mosca R., Frigeri P., Ghezzi C.
Investigation of self-assembled InAs/GaAs Quantum Dots by space charge spectroscopy techniques
(2003) LXXXIX Congresso Nazionale della Società Italiana di Fisica, Parma
Mosca R., Bussei P., Amighetti S., Franchi S., Frigeri P., Gombia E., Carnera A., Peroni M.
Diffusion of beryllium in GaAs structures grown by MBE
(2003) LXXXIX Congresso Nazionale della Società Italiana di Fisica, Parma
Dozsa L., Toth L., Horvath Zs.J., Hubik P., Kristofik J., Mares J.J., Gombia E., Frigeri P., Mosca R., Franchi S.
Lateral conductivity in GaAs/InAs quantum dot structures
(2003) DRIP X - 10h International Conference on Defects: Recognition, Imaging and Physics of Semiconductors, Batz-sur-Mer (Francia)
Zatko B., Dubecky F., Bohacek P., Franchi S., Gombia E., Mosca R., Huran J., Necas V., Sekacova M., Frigeri P., Foster A., Kordos P.
On the spectrometric performance limit of radiation detectors based on semi-insulating GaAs
(2003) 5th IWORID - 5th International Workshop on Radiation Imaging Detectors, Riga, Latvia
Mosca R. , Gombia E.
Influenza della tecnologia di preparazione di HEMT a GaN sulla presenza di stati di interfaccia al gate e nelle regioni di accesso del dispositivo
(2003)
Bocchi C., Germini F., Ghezzi G., Gombia E., Mosca R., Nasi L., Mukhamedzhanov E.K., Privitera V., Spinella C.
Triple crystal diffractometry, X-ray standing wave, and transmission electron microscopy investigation of shallow BF2 implantation in Si
(2002) in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
Gombia E.1, Mosca R.1, Frigeri P.1, Franchi S.1, Amighetti S.2, Ghezzi C.2
Electrical characterization of self-assembled InAs/GaAs quantum dots by capacitance techniques
(2002) in Materials science & engineering. B, Solid-state materials for advanced technology
Ghezzi C.1, Magnanini R.1, Parisini A.1, Franchi S.2, Gombia E.2, Mosca R.2
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped algasb
(2002) in Journal of applied physics
Horvath Zs.J.1, Franchi S.2, Bosacchi A.2, Frigeri P.2, Gombia E.2, Mosca R.2, Van Tuyen V.1
Defect-related current instabilities in InAs/GaAs and AlGaAs/GaAs structures
(2002) in Diffusion and defect data, solid state data. Part B, Solid state phenomena
Horvath Zs.J.1, Frigeri P.2, Franchi S.2, Van Tuyen V.1, Gombia E.2, Mosca R.2, Dszsa L.1
Current instabilities in gaas/inas self-aggregated quantum dot structures
(2002) in Applied surface science
Mosca R.1, Bussei P.1, Franchi S.1, Frigeri P.1, Gombia E.1, Carnera A.2, Peroni M.3
Modeling of Be diffusion in gaas layers grown by MBE
(2002) in Materials science & engineering. B, Solid-state materials for advanced technology
R. Mosca1, P. Bussei1, S. Franchi1, P. Frigeri1, E. Gombia1, A. Carnera2, M. Peroni3
Modelling of Be diffusion in GaAs layers grown by MBE
(2001) 9th International conference on Defects - Recognitin, Imaging and Physics in Semiconductors, Rimini,Italy, september 24-28, 2001
A.GASPAROTTO; B.FRABONI; F.PRIOLO; F.ENRICHI; MAZZONE A; G.SCAMARCIO; M.TROCCOLI; R.MOSCA
Assessment of electrical and optical properties of heavily fe-implanted semi-insulating InP
(2001) in Materials science & engineering. B, Solid-state materials for advanced technology
Zs.J. Horváth1,2, Vo Van Tuyen2, S. Franchi3, A. Bosacchi3, P. Frigeri3, E. Gombia3, R. Mosca3, D. Pal3, I. Kalmár2, B. Szentpáli1
Engineered Schottky barriers on n-In(0.35)Ga(0.65)As
(2001) in Materials science & engineering. B, Solid-state materials for advanced technology
R. Mosca1, , S. Franchi1, P. Frigeri1, E. Gombia1, A. Carnera2, M. Peroni3
Influence of the As/Ga flux ratio on diffusion of Be in MBE GaAs layers
(2001) in Materials science & engineering. B, Solid-state materials for advanced technology
Zs.J Horváth1 , L Dózsa1, Vo Van Tuyen1, B P?dör1, Á Nemcsics1, P Frigeri2, E Gombia2, R Mosca2, S Franchi2
Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures
(2000) in Thin solid films (Print)
L Dózsa1, , Zs.J Horváth1, Vo Van Tuyen1, B P?dör1, T Mohácsy1, S Franchi2, P Frigeri2, E Gombia2, R Mosca2
The effect of InAs quantum layer and quantum dots on the electrical characteristics of GaAs structures
(2000) in Microelectronic engineering
A. Gasparotto1, A. Carnera1, A. Paccagnella2, B. Fraboni3, F. Priolo4, E. Gombia5, and R. Mosca5
High-resistance buried layers by MeV Fe implantation in n-type InP
(1999) in Applied physics letters
Zs. J. Horváth1, E. Gombia2, D. Pal2, Cs. Kovacsics3, G. Capannese4, I. Pintér1, M. Ádám1, R. Mosca2, Vo. Van Tuyen1, L. Dózsa1
Effect of defect bands on the electrical characteristics of irradiated GaAs and Si
(1999) in Physica status solidi. A, Applications and materials science (Print)
A. Gasparotto a, A. Carnera a, A. Paccagnella b, B. Fraboni c, F. Priolo d, E. Gombia e, R. Mosca e, G. Rossetto f
Semi-insulating behaviour in Fe MeV implanted n-type InP
(1999) in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
S. Libertino, S. Coffa, R. Mosca, E. Gombia
The electrical properties of terbium ions in crystalline Si
(1999) in Journal of applied physics (online)
S Gennari, C Ferrari, E Gombia, R Mosca, D Pal, L Lazzarini, S Franchi, A Bosacchi
Study of dislocation distribution in graded InGaAs/GaAs buffer layers by XRD and DLTS
(1999) 1st International Workshop on Lattice-Mismatched and Heterovalent Thin Film Epitaxy, CASTELVECCHIO PAS, ITALY, SEP 13-15, 1998
D. Pal, E. Gombia, R. Mosca, A. Bosacchi, and S. Franchi
Deep levels in virtually unstrained InGaAs layers deposited on GaAs
(1998) in Journal of applied physics
Zs.J. Horváth,a, M. Ádám,b, Cs. Dücsö,b, I. Pintér,b, Vo Van Tuyen,a, I. Bársony,b, E. Gombia,c, R. Mosca,c, Zs. Makaró,b
Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation
(1998) in Solid-state electronics
E. Gombia1, R. Mosca1, S. Franchi1, C. Ghezzi2, and R. Magnanini2
Minority carrier capture at DX centers in AlGaSb Schottky diodes
(1998) in Journal of applied physics
Gombia, E., Mosca, R., Pal, D., Motta, A., Nasi, L., Bosacchi, A., Franchi, S.
Deep level investigation on n-In0.35Ga0.65As/GaAs structures
(1998) in Solid-state electronics
Roberto Mosca
Materiali funzionali per elettronica
(1998) Conferenza annuale della ricerca, Roma, 21-25 ottobre 1996
R. Fornari1, A. Zappettini1, E. Gombia1, R. Mosca1, K. Cherkaoui2, and G. Marrakchi2
Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production
(1997) in Journal of applied physics
B. Rotelli1, L. Tarricone1, E. Gombia2, R. Mosca2, and M. Perotin3
Photoelectric properties of GaSb Schottky diodes
(1997) in Journal of applied physics
R. Mosca1 , E. Gombia1, A. Motta1, A. Bosacchi1, S. Franchi1, C. Beneventi2, C. Ghezzi2, R. Magnanini2
Influence of preparation procedure on the characteristics of Schottky barriers fabricated in situ on MBE GaSb
(1997) in Materials science & engineering. B, Solid-state materials for advanced technology
S. Libertino, S. Coffa, R. Mosca, E. Gombia
The effects of impurity codoping on the electrical properties of Erbium ions in crystalline Silicon
(1997) MATERIALS RESEARCH SOCIETY SYMPOSIUM - Rare earth doped sewmiconductors II, San Francisco (USA), 08-10 aprile 1996
S. Coffa, G. Franzò, F. Priolo, S. Libertino, R. Mosca, E. Gombia, C. Spinella
Ion implantation doping for optoelectronic applications
(1996) in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
Gombia, E. Mosca, R. ; Motta, A. ; Chaabane, H. ; Bosacchi, A. ; Franchi, S.
Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates
(1996) in Electronics Letters
A. Baraldi, a, P. Frigeri, a,C. Ghezzi, a, A. Parisini, a, A. Bosacchi, b, S. Franchi, b, E. Gombia, b, and R. Mosca b,
Coexistence of the DX center with nonmetastable states of the donor impurity in Si-doped AlxGa1-xAs: Effects on the low-temperature electron mobility
(1996) in Physical review. B, Condensed matter
R. Fornari, A. Zappettini, E. Gombia, R. Mosca, M. Curti
Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers
(1996) 9th Conference on Semiconducting and Insulating Materials (SIMC 9), Toulouse, France, Apr 29-May 3, 1996
R. Fornari, A. Zappettini, E. Gombia, R. Mosca, M. Curti, K. Cherkaoui and G. Marrakchi
Semi-insulating behaviour of n-type lightly Fe-doped InP wafers after thermal annealing
(1996) Eighth International Conference on Indium Phosphide and Related Materials, Schwabisch Gmund (D), Apr 21-25, 1996
A. Bosacchi,a, E. Gombia,a, R. Mosca,a, S. Franchi, a, A. Carnera,b, A. Gasparotto,b
Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy
(1995) in Journal of crystal growth
ZsJ Horváth1,2, A Bosacchi1, S Franchi1, E Gombia1, R Mosca1, D Biondelli1
Electrical behaviour of epitaxial Al/n-Al0.25Ga0.75As junctions: effect of the composition of undoped AlxGa1 - xAs cap layer
(1995) in Vacuum
R. Fornari, A. Brinciotti*, E. Gombia, R. Mosca, A. Sentiri
Preparation and characterization of semi-insulating undoped indium phosphide
(1994) in Materials science & engineering. B, Solid-state materials for advanced technology
Zs.J. Horváth1, A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, A. Motta
Anomalous thermionic-field emission in epitaxial Al/n-AlGaAs junctions
(1994) in Materials science & engineering. B, Solid-state materials for advanced technology
A. Bosacchi,a, S. Franchi,a, E. Gombia, a, R. Mosca,a, A. Bignazzi,b, E. Grilli,b, M. Guzzi,b, R. Zamboni,b
Effects of hydrogenation of deep and shallow levels in AlGaAs grown by MBE
(1994) in Materials science & engineering. B, Solid-state materials for advanced technology
E. Gombia, R. Mosca, A. Bosacchi, M. Madellaf, and S. Franchi
Deep levels in GaAs grown by atomic layer molecular beam epitaxy
(1994) in Applied physics letters
A. Bosacchi1, S. Franchi1, E. Gombia1 and R. Mosca1
F. Fantini2, R. Menozzi2 and S. Naccarella2
Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers
A. Bosacchi1, S. Franchi1, E. Gombia1 and R. Mosca1
(1994) in Electronics Letters
A. Bosacchi, E. Gombia, M. Madella1, R. Mosca, S. Franchi
Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy
(1994) in Materials science & engineering. B, Solid-state materials for advanced technology
R. Mosca1, E. Gombia1, A. Bosacchi1, S. Franchi1, C. Ghezzi2, and P. Frigeri2
Hole injection in AlGaAs Schottky barriers: Influence on the DX center occupation
(1994) in Journal of applied physics
A. Baraldi1, P. Frigeri1, C. Ghezzi1, A. Parisini1, A. Bosacch2, S. Franchi2, E. Gombia2, R. Mosca2
Coexistence of the DX center and other Si-related electron bound states in Al1-xGaxAs
(1994) in Materials science & engineering. B, Solid-state materials for advanced technology
Antonio Bosacchi, Secondo Franchi, Enos Gombia, Roberto Mosca, Alberto Bignazzi1, Emanuele Grilli1, Mario Guzzi1 and Riccardo Zamboni1
Passivation of Shallow and Deep Levels by Hydrogen Plasma Exposure in AlGaAs Grown by Molecular Beam Epitaxy
(1994) in Japanese journal of applied physics
R. MOSCA 1, E. GOMBIA 1, C. GHEZZI2, P. FRIGERI2, A. BOSACCHI1 AND S. FRANCHI1
Hole capture by the DX center in AlGaAs Schottky barriers
(1994) in Materials science forum
A. Bosacchi, E. Gombia, M. Madella, R. Mosca and S. Franchi
Shallow and deep levels in GaAs grown by atomic layer MBE
(1994) Twentieth International Symposium on Gallium Arsenide and Related Compounds, Freiburg, Germany, 29/8-2/9, 1993
A. Baraldi1, F. Colonna1, P. Frigeri1, C. Ghezzi1, A. Parisini1, E. Gombia2 and R. Mosca2
Low-temperature occupation of a donor state resonant with the conduction band in Al0.35Ga0.65As
(1993) in Physical review. B, Condensed matter
A. Bosacchi1, S. Franchi1, E. Gombia1, R. Mosca1, F. Fantini2. S. Franchi2 and R. Menozzi2
THERMAL STABILITY OF Al/AlGaAs AND Al/GaAs/AlGaAs(MBE) SCHOTTKY BARRIERS
(1993) in Electronics Letters
A. Castaldini a, A. Cavallini a, E. Gombia b, R. Mosca b L. Tarricone c, A. Motta b
and L. Bora a
Lifetime and diffusion length inhomogeneity controlled by point and extended defect interaction in n-GaAs LEC
A. Castaldini a, A. Cavallini a, E. Gombia b, R. Mosca b L. Tarricone c, A. Motta b
(1993) in Applied surface science
R. MOSCA1, E. GOMBIA1, C. GHEZZI2, P. FRIGERI2, A. BOSACCHI1, S. FRANCHI1
LOW TEMPERATURE DX CENTER IONIZATION BY FORWARD BIASING AlGaAs SCHOTTKY BARRIERS
(1992) 12th General Conference of the Condensed Matter Division of the E.P.S., Praha (Czech Republic), 6-9 Aptril 1992
C. Ghezzi
R. Mosca, A. Bosacchi, S. Franchi, E. Gombia and L.E. Vanzetti
EVIDENCE FOR NON-EQUILIBRIUM FREE ELECTRON DENSITY IN A1GaAs AT LOW TEMPERATURES
C. Ghezzi
(1991) in Solid state communications (Print)
A. Castaldini a A. Cavallini a, E. Gombia b, R. Mosca b and L. Tarricone c
Evaluation of the diffusion length of minority carriers in bulk GaAs
(1991) in Applied surface science
C. Ghezzi
R. Mosca, A. Bosacchi, S. Franchi and E. Gombia
The influence of the DX center on the capacitance of Schottky barriers in n-type A1GaAs
C. Ghezzi
(1991) in Applied surface science
C Ghezzi1, E Gombia2 and R Mosca2
The influence of the DX centre C-V and I-V characteristics of Schottky barriers in n-type AlGaAs
(1991) in Semiconductor science and technology (Print)
C. Ghezzi1,E. Gombia2 and R. Mosca2
DX-center-related features by capacitance measurements in AlGaAs
(1991) in Journal of applied physics
F. FRISINA1, N. TAVOLO1, E. GOMBIA2, R. MOSCA2, P. CHIRCO3, P.G. FUOCHI3
ELECTRON IRRADIATION EFFECTS ON POWER MOS TRANSISTORS
(1990) in International journal of radiation applications and instrumentation, Part C, Radiation physics and chemistry
C. Frigeri1, Breitenstein O.2, Fornari R.1, Gleichmann R.2, Gombia E.1, and Mosca R.1
1 CNR, MASPEC Institute, Via Chiavari 18/A, 43100 Parma, Italy 2 Academy of Sciences, IFE, 4020 Halle, GDR
Precipitates and deep levels in n-type LEC GaAs
C. Frigeri1, Breitenstein O.2, Fornari R.1, Gleichmann R.2, Gombia E.1, and Mosca R.1
(1989) 6th Oxford Conference on Electron Microscopy of Semiconducting Materials,, Oxford (UK), 10-13/04/1989
C. Ghezzi 1, E. Gombia 2, R. Mosca 2, and M. Pillan 3
Electron Traps and Positive DLTS Signals in VPE GaAs MESFETs
(1989) in Applied physics. A, Solids and surfaces
A. Bosacchi, S. Franchi, E. Gambia, R. Mosca, L Vanzetti, P. Allegri, and V. Avanzini
M. Capizzi and C. Coluzza
Effect of hydrogen implantation on shallow and deep levels in GaAs growth by molecular beam epitaxy
A. Bosacchi, S. Franchi, E. Gambia, R. Mosca, L Vanzetti, P. Allegri, and V. Avanzini
(1989) in Journal of vacuum science & technology. B, Microelectronics processing and phenomena
Fornari, R., Gombia, E., Mosca, R.
Effects of melt composition on deep electronic states and compensation ratios in n-type LEC gallium arsenide
(1989) in Journal of electronic materials
P Allegri, A Bosacchi, S Franchi, E Gombia, R Mosca, C Ghezzi, V Avanzini
Hydrogenation of GaAs during MBE Growth
(1989) in Materials Science Forum
C. Frigeri1, Breitenstein O.2, Fornari R.1, Gleichmann R.2, Gombia E.1, and Mosca R.1
Precipitates and deep levels in n-type LEC GaAs
(1989) 6th Oxford Conference on Electron Microscopy of Semiconducting Materials, oxford (UK), APR 10-13, 1989
Fornari R., Frigeri C., Gleichmann R.1, Gombia E. and Mosca R
Effects of the melt composition on structural and electrical characteristics of bulk Gallim Arsenide
(1989) Gemeinsame Jahrestagung AICC-DGKK 1989, Parma (I), 3-5/04/1989
P Franzosi, L Lazzarini, R Mosca, G Salviati, M Berti, AV Drigo
Lattice stress and electrically active defects induced by ion channeling in the initial layers of III-V compounds
(1987) in Institute of physics conference series
C Ghezzi1, E Gombia2, R Mosca2, M Pillan3
A DLTS Investigation of VPE GaAs MESFETs
(1987) 17th European Solid State Device Research Conference, Bologna (Italy), 14-17/9/1987
E. Gombia, C. Ghezzi, and R. Mosca
Use of spatially dependent electron capture to profile deeplevel densities in Schottky barriers
(1985) in Journal of applied physics