Profilo personale

Giovanni Attolini

Le informazioni pubblicate in questa pagina sono gestite in completa autonomia da GIOVANNI ATTOLINI il/la quale se ne assume ogni responsabilità

Prodotti della ricerca

Negri, Marco; Bosi, Matteo; Orsi, Davide; Rimoldi, Tiziano; Attolini, Giovanni; Buffagni, Elisa; Ferrari, Claudio; Cristofolini, Luigi; Salviati, Giancarlo

Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy

(2017) in Journal of materials science
Tatti, R.; Timpel, M.; Nardi, M. V.; Fabbri, F.; Rossi, R.; Pasquardini, L.; Chiasera, A.; Aversa, L.; Koshmak, K.; Giglia, A.; Pasquali, L.; Rimoldi, T.; Cristofolini, L.; Attolini, G.; Varas, S.; Iannotta, S.; Verucchi, R.; Salviati, G.

Functionalization of SiC/SiOx nanowires with a porphyrin derivative: a hybrid nanosystem for X-ray induced singlet oxygen generation

(2017) in Molecular systems design & engineering
P. Lagonegro a, F. Rossi a, C. Galli a,b, A. Smerieri a,b, R. Alinovi c, S. Pinelli c, T. Rimoldi e, G. Attolini a, G. Macaluso a,b, C.Macalusoa,b, S.E. Saddow d, G. Salviati a

A cytotoxicity study of silicon oxycarbide nanowires as cell scaffold for biomedical applications.

(2017) in Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)
Giovanni Attolini1, Matteo Bosi1, Marco Negri1, Paola Lagonegro1, Pasquale Mario Rotonda2, Chris Cornelissen2, Tiziano Rimoldi3, Benedetta Ghezzi4, Sara Benecchi4

Wettability of Silicon Carbide Nanowires

(2017) Italian Crystal Growth 2017, Milano, 20-21 Novembre 2017
Fradetal L.; Bano E.; Attolini G.; Rossi F.; Stambouli V.

A silicon carbide nanowire field effect transistor for DNA detection

(2016) in Nanotechnology (Bristol. Print)
Prutskij, T.; Makarov, N.; Attolini, G.

Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys

(2016) in Journal of applied physics
Prutskij, Tatiana; Makarov, Nykolay; Attolini, Giovanni

Analysis of polarized photoluminescence emission of ordered III-V semiconductor quaternary alloys

(2016) in Journal of luminescence
Attolini, G.; Ponraj, J. S.; Frigeri, C.; Buffagni, E.; Ferrari, C.; Musayeva, N.; Musayeva, N.; Jabbarov, R.; Jabbarov, R.; Bosi, M.

MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor

(2016) in Applied surface science
Ponraj, Joice Sophia; Deivasigamani, Geetha; Bosi, Matteo; Attolini, Giovanni; Buffagni, Elisa; Ferrari, Claudio

Influence of doping on the nanomechanical behavior of InGaP/Ge thin films

(2016) in Materials letters (Gen. ed.)
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