Profilo personale

Giovanni Attolini

Le informazioni pubblicate in questa pagina sono gestite in completa autonomia da GIOVANNI ATTOLINI il/la quale se ne assume ogni responsabilità

Prodotti della ricerca

P. Lagonegro a, F. Rossi a, C. Galli a,b, A. Smerieri a,b, R. Alinovi c, S. Pinelli c, T. Rimoldi e, G. Attolini a, G. Macaluso a,b, C.Macalusoa,b, S.E. Saddow d, G. Salviati a

A cytotoxicity study of silicon oxycarbide nanowires as cell scaffold for biomedical applications.

(2017) in Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)
Negri, Marco; Bosi, Matteo; Orsi, Davide; Rimoldi, Tiziano; Attolini, Giovanni; Buffagni, Elisa; Ferrari, Claudio; Cristofolini, Luigi; Salviati, Giancarlo

Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy

(2017) in Journal of materials science
Tatti, R.; Timpel, M.; Nardi, M. V.; Fabbri, F.; Rossi, R.; Pasquardini, L.; Chiasera, A.; Aversa, L.; Koshmak, K.; Giglia, A.; Pasquali, L.; Rimoldi, T.; Cristofolini, L.; Attolini, G.; Varas, S.; Iannotta, S.; Verucchi, R.; Salviati, G.

Functionalization of SiC/SiOx nanowires with a porphyrin derivative: a hybrid nanosystem for X-ray induced singlet oxygen generation

(2017) in Molecular systems design & engineering
Giovanni Attolini1, Matteo Bosi1, Marco Negri1, Paola Lagonegro1, Pasquale Mario Rotonda2, Chris Cornelissen2, Tiziano Rimoldi3, Benedetta Ghezzi4, Sara Benecchi4

Wettability of Silicon Carbide Nanowires

(2017) Italian Crystal Growth 2017, Milano, 20-21 Novembre 2017
Fradetal L.; Bano E.; Attolini G.; Rossi F.; Stambouli V.

A silicon carbide nanowire field effect transistor for DNA detection

(2016) in Nanotechnology (Bristol. Print)
Prutskij, Tatiana; Makarov, Nykolay; Attolini, Giovanni

Analysis of polarized photoluminescence emission of ordered III-V semiconductor quaternary alloys

(2016) in Journal of luminescence
Choi J.H.; Bano E.; Henry A.; Attolini G.; Zekentes K.

Comparison of bottom-up and top-down 3C-SiC NWFETs

(2016) 16th International Conference on Silicon Carbide and Related Materials - ICSCRM 2015, Sicilia, Italy, 4-9 Oct. 2015
Bano E.; Fradetal L.; Stambouli V.; Attolini G.

DNA detection using SiC nanowire based transistor

(2016) 16th International Conference on Silicon Carbide and Related Materials - ICSCRM 2015, Sicilia, Italy, 4-9 Oct. 2015
Bosi, M.; Attolini, G.; Negri, M.; Ferrari, C.; Buffagni, E.; Frigeri, C.; Calicchio, M.; Pecz, B.; Riesz, F.; Cora, I.; Osvath, Z.; Jiang, L.; Borionetti, G.

Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition

(2016) in CrystEngComm (Camb., Online)
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