Personal profile
Giovanni Attolini
The information published in this page are entirely managed by GIOVANNI ATTOLINI who is completely responsible for it.
Research products
Massimo Solzi; Francesco Cugini; Nicola Sarzi Amadé; Cesare Frigeri; Giovanni Attolini; Nahida N. Musayeva; Asgar Huseynov; Sevda H. Abdullayeva; Chingiz A. Sultanov
High-temperature magnetic coercivity of CNTs filled with multi-phase Febased nanoparticles
(2020) in Journal of magnetism and magnetic materials
Marquez, G.; Sagredo, V; Guillen-Guillen, R.; Attolini, G.; Bolzoni, F.
Calcination effects on the crystal structure and magnetic properties of CoFe2O4 nanopowders synthesized by the coprecipitation method
(2020) in Revista mexicana de física
Solzi, M.; Pernechele, C.; Attolini, G.; Delgado, G.E.; Sagredo, V.
Magnetic ordering of Mn2GeS4 single crystals with olivine structure
(2020) in Journal of magnetism and magnetic materials
Matteo Bosi, Marco Negri, and Giovanni Attolini
Cubic Silicon Carbide Thin Films Deposition (3C-SIC Films)
(2020) in Topological Nanochemistry, 2020
Giovanni Attolini, Matteo Bosi, and Marco Negri
Vapour Phase Epitaxy
(2020) in Topological Nanochemistry, 2020
Marco Negri, Giovanni Attolini, Paola Lagonegro, and Matteo Bosi
Silicon Carbide Nanowires
(2020) in Topological Nanochemistry, 2020
G. Attolini,1 M. Bosi1, M. Negri1, P. Lagonegro1, P. M. Rotonda2, C. Cornelissen2, T. Rimoldi3, B.Ghezzi4, J.S.Ponraj5
BAGNABILITA DI SUPERFICI BASATE SUL CARBURO DI SILICIO
(2020)
G.ATTOLINI, E.CAVALLI, F.FINETTI2, F.ROSSI
Synthesis of core-shell SiC/SiO2 Nanowires: experimental studies on the different steps of the growth
(2019) Nanotechnology & Materials Science, Amsterdam, 24-26/04/2019
Prutskij T.; Seredin P.; Attolini G.
High linear polarization of photoluminescence of GaInP epilayers at low temperature
(2019) in Journal of luminescence
Ghezzi, Benedetta; Lagonegro, Paola; Pece, Roberta; Parisi, Ludovica; Bianchi, Massimiliano; Tatti, Roberta; Verucchi, Roberto; Attolini, Giovanni; Quaretti, Martina; Macaluso, Guido M.
Osteoblast adhesion and response mediated by terminal -SH group charge surface of SiOxCy nanowires
(2019) in Journal of materials science. Materials in medicine
Claudio Ferrari, Nahida Musayeva, Francesco Sansone, Matteo Bosi, Giovanni Attolini, Cesare Frigeri, Paola Frigeri, Enos Gombia, Giovanna Trevisi, Luca Seravalli, Sara Beretta, Laura Lazzarini, Francesca Rossi, Laura Baldini, Francesco Rispoli, Rovshan Hasanov, Chingiz Sultanov, Gulnaz Gahramanova, Teymur Orujov
Sensors based on carbon nanotubes and germanium nanowires for explosive detection
(2019) The International Conference Nano-M&D 2019 "Properties, Fabrication and Applications of Nano-Materials and Nano-Devices", Paestum, Italy, from June 4th to June 8th, 2019., rom June 4th to June 8th, 2019.
Prutskij T.; Seredin P.; Attolini G.
The effect of temperature on the linear polarization of the photoluminescence of an ordered AlGaInP semiconductor alloy
(2018) in Journal of luminescence
Giovanni Attolini, Marco Negri
Vapour phase growth and characterization of GaS
(2018) 3rd Joint AIC-SILS Conference, Roma, 25-28/06/2018
Tatti, R.; Timpel, M.; Nardi, M. V.; Fabbri, F.; Rossi, R.; Pasquardini, L.; Chiasera, A.; Aversa, L.; Koshmak, K.; Giglia, A.; Pasquali, L.; Rimoldi, T.; Cristofolini, L.; Attolini, G.; Varas, S.; Iannotta, S.; Verucchi, R.; Salviati, G.
Functionalization of SiC/SiOx nanowires with a porphyrin derivative: a hybrid nanosystem for X-ray induced singlet oxygen generation
(2017) in Molecular systems design & engineering
Negri, Marco; Bosi, Matteo; Orsi, Davide; Rimoldi, Tiziano; Attolini, Giovanni; Buffagni, Elisa; Ferrari, Claudio; Cristofolini, Luigi; Salviati, Giancarlo
Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy
(2017) in Journal of materials science
P. Lagonegro a, F. Rossi a, C. Galli a,b, A. Smerieri a,b, R. Alinovi c, S. Pinelli c, T. Rimoldi e, G. Attolini a, G. Macaluso a,b, C.Macalusoa,b, S.E. Saddow d, G. Salviati a
A cytotoxicity study of silicon oxycarbide nanowires as cell scaffold for biomedical applications.
(2017) in Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)
Giovanni Attolini1, Matteo Bosi1, Marco Negri1, Paola Lagonegro1, Pasquale Mario Rotonda2, Chris Cornelissen2, Tiziano Rimoldi3, Benedetta Ghezzi4, Sara Benecchi4
Wettability of Silicon Carbide Nanowires
(2017) Italian Crystal Growth 2017, Milano, 20-21 Novembre 2017
Fradetal L.; Bano E.; Attolini G.; Rossi F.; Stambouli V.
A silicon carbide nanowire field effect transistor for DNA detection
(2016) in Nanotechnology (Bristol. Print)
Prutskij, T.; Makarov, N.; Attolini, G.
Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys
(2016) in Journal of applied physics
Prutskij, Tatiana; Makarov, Nykolay; Attolini, Giovanni
Analysis of polarized photoluminescence emission of ordered III-V semiconductor quaternary alloys
(2016) in Journal of luminescence
Attolini, G.; Ponraj, J. S.; Frigeri, C.; Buffagni, E.; Ferrari, C.; Musayeva, N.; Musayeva, N.; Jabbarov, R.; Jabbarov, R.; Bosi, M.
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor
(2016) in Applied surface science
Ponraj, Joice Sophia; Deivasigamani, Geetha; Bosi, Matteo; Attolini, Giovanni; Buffagni, Elisa; Ferrari, Claudio
Influence of doping on the nanomechanical behavior of InGaP/Ge thin films
(2016) in Materials letters (Gen. ed.)
G. Attolini, J. S. Sophia, C. FRIGERI, E. Buffagni, C. Ferrari, N. Musayeva, R. Jabbarov, M. Bosi
MOVPE growth and characterization of heteroepitaxial germaniumon silicon using iBuGe as precursor
(2016) in Applied surface science
Bosi, M.; Attolini, G.; Negri, M.; Ferrari, C.; Buffagni, E.; Frigeri, C.; Calicchio, M.; Pecz, B.; Riesz, F.; Cora, I.; Osvath, Z.; Jiang, L.; Borionetti, G.
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition
(2016) in CrystEngComm (Camb., Online)
Choi J.H.; Bano E.; Henry A.; Attolini G.; Zekentes K.
Comparison of bottom-up and top-down 3C-SiC NWFETs
(2016) 16th International Conference on Silicon Carbide and Related Materials - ICSCRM 2015, Sicilia, Italy, 4-9 Oct. 2015
Bano E.; Fradetal L.; Stambouli V.; Attolini G.
DNA detection using SiC nanowire based transistor
(2016) 16th International Conference on Silicon Carbide and Related Materials - ICSCRM 2015, Sicilia, Italy, 4-9 Oct. 2015
Ponraj J.S.; Dhanabalan S.C.; Attolini G.; Salviati G.
SiC Nanostructures Toward Biomedical Applications and Its Future Challenges
(2016) in Critical reviews in solid state and materials sciences
Negri, M.; Dhanabalan, S. C.; Attolini, G.; Lagonegro, P.; Campanini, M.; Bosi, M.; Fabbri, F.; Salviati, G.
Tuning the radial structure of core-shell silicon carbide nanowires
(2015) in CrystEngComm (Camb., Online)
Rossi, F.; Bedogni, E.; Bigi, F.; Rimoldi, T.; Cristofolini, L.; Pinelli, S.; Alinovi, R.; Negri, M.; Dhanabalan, S. C.; Attolini, G.; Fabbri, F.; Goldoni, M.; Mutti, A.; Benecchi, G.; Ghetti, C.; Iannotta, S.; Salviati, G.
Porphyrin conjugated SiC/SiOx nanowires for X-ray-excited photodynamic therapy
(2015) in Scientific reports (Nature Publishing Group)
Lagonegro, P.; Bosi, M.; Attolini, G.; Negri, M.; Dhanabalan, S. C.; Rossi, F.; Boschi, F.; Lupo, P. P.; Besagni, T.; Salviati, G.
SiC NWs grown on silicon substrate using Fe as catalyst
(2015) in Materials science forum
Ponraj, Joice Sophia; Buffagni, Elisa; Deivasigamani, Geetha; Dakshanamoorthy, Arivuoli; Bosi, Matteo; Ferrari, Claudio; Attolini, Giovanni
Studies of nanoindentation and residual stress analysis of Ge/GaAs epilayers
(2015) in Semiconductor science and technology (Print)
Choi, Ji Hoon; Bano, Edwige; Latu-Romain, Laurence; Ollivier, Maelig; Joo, Min Kyu; Jeon, Dae Young; Fradetal, Louis; Rossi, Francesca; Attolini, Giovanni
Improved ohmic contacts for SiC nanowire devices with nickel-silicide
(2015) in Journal of alloys and compounds
P. Joice Sophia, G. Attolini, M. Bosi, E. Buffagni, C. Ferrari, C. Frigeri, K. Vad, A. Csik, V. Takáts, Z. Zolnai
Influence of Surface Roughness on Interdiffusion Processes in InGaP/Ge Heteroepitaxial Thin Films
(2015) in ECS Journal of Solid State Science and Technology
Matteo Bosi1, Giovanni Attolini1, Marco Negri1, Cesare Frigeri1,
Elisa Buffagni1, Claudio Ferrari1, Tiziano Rimoldi2, Luigi Cristofolini2,
Lucrezia Aversa3, Roberta Tatti3, Roberto Verucchi
Buffer layer optimization for the growth of state of the art 3C-SiC/Si
Matteo Bosi1, Giovanni Attolini1, Marco Negri1, Cesare Frigeri1,
Elisa Buffagni1, Claudio Ferrari1, Tiziano Rimoldi2, Luigi Cristofolini2,
(2015) HeteroSiC-WASMPE 2013, Nizza, 17-19 giugno 2013
Baldi, G.; Bosi, M.; Giusti, G.; Attolini, G.; Berzina, T.; Collini, C.; Lorenzelli, L.; Mosca, R.; Nozar, P.; Ponraj, J. S.; Toccoli, T.; Verucchi, R.; Iannotta, S.
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications
(2015) INTERNATIONAL CONFERENCE ON NUMERICAL ANALYSIS AND APPLIED MATHEMATICS 2014 (ICNAAM-2014), Rhodes, Greece, 22-28 September 2014
Negri, Marco; Rossi, Francesca; Attolini, Giovanni; Fabbri, Filippo; Dhanabalan, Sathish Chander; Boschi, Francesco; Bosi, Matteo; Nardi, Marco Vittorio; Salviati, Giancarlo
Cubic Silicon Carbide Nanowires
(2015) Springer, Dordrecht (Paesi Bassi) in Exotic properties of carbon nanomatter, 2015
ATTOLINI Giovanni
Technical aspects on crystal growth from vapour phase
(2015) Aracne, Roma (Italia), 2015
Fabbri, Filippo; Rossi, Francesca; Lagonegro, Paola; Negri, Marco; Ponraj, Joice Sophia; Bosi, Matteo; Attolini, Giovanni; Salviati, Giancarlo
3C-SiC nanowires luminescence enhancement by coating with a conformal oxides layer
(2014) in Journal of physics. D, Applied physics (Print)
G Baldi1, S Battistoni1,4, G Attolini1, M Bosi1, C Collini3, S Iannotta1, L Lorenzelli3, R Mosca1, J S Ponraj1, R Verucchi2 and V Erokhin1
Logic with memory: and gates made of organic and inorganic memristive devices
(2014) in Semiconductor science and technology (Online)
Ponraj, J. S.; Attolini, G.; Bosi, M.; Dakshinamoorthy, A.
Nanoindentation studies of gallium arsenide heteroepitaxial layers
(2014) in Crystal Research and Technology
Bosi M.; Attolini G.; Frigeri P.; Nasi L.; Rossi F.; Seravalli L.; Trevisi G.
Epitaxial germanium deposited by MOVPE on InGaAs quantum dot stressors grown by MBE
(2014) in Crystal Research and Technology
Attolini, Giovanni; Rossi, Francesca; Negri, Marco; Dhanabalan, Sathish Chander; Bosi, Matteo; Boschi, Francesco; Lagonegro, Paola; Lupo, Pierpaolo; Salviati, Giancarlo
Growth of SiC NWs by vapor phase technique using Fe as catalyst
(2014) in Materials letters (Gen. ed.)
Fabbri, Filippo; Rossi, Francesca; Negri, Marco; Tatti, Roberta; Aversa, Lucrezia; Dhanabalan, Sathish Chander; Verucchi, Roberto; Attolini, Giovanni; Salviati, Giancarlo
Carbon-doped SiOx nanowires with a large yield of white emission
(2014) in Nanotechnology (Bristol. Print)
Alessia Bacchi , Mario Tribaudino, Gloria Bianchino, Claudia Graiff, Luciano Marchiò, Chiara Massera, Giorgio Pelosi, Lara Righi, Matteo Tegoni, Luciana Mantovani, Giovanni Attolini, Andrea Zappettini
CRISTALLI
(2014)
G. Salviati1, F. Rossi1*, F. Fabbri1, G. Attolini1, P. Lagonegro1, M. Negri1, F. Albertini1, V. Chiesi1, R. Ciprian1, F. Casoli1, L. Nasi1, M. Campanini1,
R. Verucchi1, L. Aversa1, R. Tatti1, S. Iannotta1, F. Bigi2, E. Bedogni2, L. Cristofolini3, T. Rimoldi3, P. Petronini4, R. Alfieri4, M. Galetti4, A. Mutti4, M. Goldoni4, R. Alinovi4, S. Pinelli4, A. Cacchioli5, F. Ravanetti5, G. Benecchi6, C. Ghetti6
,
Cytocompatible 3C-SiC/SiO2 core shell nanowires for bimodal cancer therapy
G. Salviati1, F. Rossi1*, F. Fabbri1, G. Attolini1, P. Lagonegro1, M. Negri1, F. Albertini1, V. Chiesi1, R. Ciprian1, F. Casoli1, L. Nasi1, M. Campanini1,
R. Verucchi1, L. Aversa1, R. Tatti1, S. Iannotta1, F. Bigi2, E. Bedogni2, L. Cristofolini3, T. Rimoldi3, P. Petronini4, R. Alfieri4, M. Galetti4, A. Mutti4, M. Goldoni4, R. Alinovi4, S. Pinelli4, A. Cacchioli5, F. Ravanetti5, G. Benecchi6, C. Ghetti6
(2014) 1st Parma Nanoday Workshop, Parma, 28/11/2014
G. Baldi1, M. Bosi1, G. Giusti2, G. Attolini1, T. Berzina1, C. Collini3, L. Lorenzelli3, R. Mosca1, P. Nozar2, J. S. Ponraj1, T. Toccoli2, R. Verucchi2, and S. Iannotta1
Optimization of Synthesis Protocols to Control the Nanostructure and the Morphology of Metal Oxide Thin Films for Memristive Applications
(2014) ICNAAM 2014 Conference, Symposium: Adaptive Materials, Devices and Systems Towards Unconventional Computing and Robotics: Modeling and Implementation, Rhodes, 24-28/09/2014
Roberta Tatti, Lucrezia Aversa, Roberto Verucchi, Filippo Fabbri, Francesca Rossi, Giovanni Attolini, Matteo Bosi, Giancarlo Salviati, Salvatore Iannotta
Functionalization of SiC nanowires by supersonic molecular beams for photodynamic therapy
(2014) SIFB 2014 - Congresso Annuale della Società Italiana di Fotobiologia, Trento, 11-13/06/2014
G. Attolini , M. Bosi, Sophia J. Ponraj, D. Arivuoli, C. FRIGERI, E. Buffagni, C. Ferrari, M. Negri, T. Asar, N. Musayeva, R. Jabbarov
Influence of the growth conditions on the properties of germanium epilayers grown by MOVPE on Si
(2013) 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17), Varsavia (PL), 11-16 Aug. 2013
Matteo Bosi, Giovanni Attolini, Marco Negri, CESARE FRIGERI, Elisa Buffagni, Claudio Ferrari, Tiziano Rimoldi, Luigi Cristofolini, Lucrezia Aversa, Roberta Tatti, Roberto Verucchi
High quality 3C-SiC/Si grown on an optimized SiC buffer layer
(2013) HeteroSic-WASMPE 2013, Nizza (F), 17-19 giugno 2013
Matteo Bosi, Giovanni Attolini, Marco Negri, CESARE FRIGERI, Elisa Buffagni, Claudio Ferrari, Tiziano Rimodi, Luigi Cristofolini, Lucrezia Aversa, Roberta Tatti, Roberto Verucchi
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates
(2013) in Journal of crystal growth
Giovanni Attolini, Matteo Bosi, Claudio Ferrari, Francesco Melino
Design guidelines for thermo-photo-voltaic generator: The critical role of the emitter size
(2013) in Applied energy
Rossi, Francesca; Fabbri, Filippo; Tallarida, Massimo; Schmeisser, Dieter; Modreanu, Mircea; Attolini, Giovanni; Salviati, Giancarlo
Structural and luminescence properties of HfO2 nanocrystals grown by atomic layer deposition on SiC/SiO2 core/shell nanowires
(2013) in Scripta materialia
Attolini, G.; Rotonda, P. M.; Cornelissen, C.; Mazzera, M.; Bosi, M.
Plasma Treatment of 3C-SiC Surfaces
(2013) in Materials science forum
Bosi, Matteo; Attolini, Giovanni; Pecz, Bela; Zolnai, Zsolt; Dobos, Laszlo; Martinez, Oscar; Jiang, Liudi; Taysir, Salim
Structural characterization of 3C-SiC grown using methyltrichlorosilane
(2013) in Materials science forum
Ponraj, Joice Sophia; Attolini, Giovanni; Bosi, Matteo
Review on Atomic Layer Deposition and Applications of Oxide Thin Films
(2013) in Critical reviews in solid state and materials sciences
Sathish Chander Dhanabalan1, Marco Negri1,2, Francesca Rossi1, Giovanni Attolini1, Marco Campanini1, Filippo Fabbri1, Matteo Bosi1, Giancarlo Salviati1
Effects of growth parameters on SiC/SiO2 core/shell nanowires radial structures
(2013) in Materials science forum
Robidas, Dipika; Deepthi, K. R.; Arunseshan, C.; Attolini, G.; Bosi, M.; Arivuoli, D.
Nanomechanical studies of doped InGaP/GaAs epilayers
(2013) in AIP conference proceedings
Giovanni Attolini
Introduzione alla crescita dei cristalli e strati epitassiali da vase vapore
(2013) Aracne, Roma (Italia), 2013
Filippo Fabbri, Francesca Rossi, Manuela Melucci, Ilse Manet, Giovanni Attolini, Laura Favaretto, Massimo Zambianchi and Giancarlo Salviati
Optical properties of hybrid T3Pyr/SiO2/3C-SiC nanowires
(2012) in Nanoscale research letters (Online)
Fabbri Filippo 1; Rossi Francesca 1; Attolini Giovanni1; Bosi Matteo 1; Salviati Giancarlo 1; Iannotta Salvatore 1; Aversa, Lucrezia 2; Verucchi Roberto 2; Nardi Marco 2; Fukata Naoki 3; Dierre Benjamin 3; Sekiguchi Takashi 3
Emission enhancement of SiC/SiO2 core/shell nanowires induced by the oxide shell
(2012) in Materials science forum
Giovanni Attolini, Francesca Rossi, Filippo Fabbri, Giancarlo Salviati, Matteo Bosi, Bernard Emrico Watts
Selective beta-SiC/SiO2 core-shell NW growth on patterned silicon substrate
(2012) in Materials science forum
Filippo Fabbri, Francesca Rossi, Giovanni Attolini, Giancarlo Salviati, Benjamin Dierre, Takashi Sekiguchi, and Naoki Fukata
Luminescence properties of SiC/SiO2 core-shell nanowires with different radial structure
(2012) in Materials letters (Gen. ed.)
Attolini, G 1; Bosi, M 1; Watts, BE 1; Battistig, G 2; Dobos, L 2; Pecz, B 2
The influence of C3H8 and CBr4 on structural and morphological properties of 3C-SiC layers
(2012) in Materials science forum
Attolini, G. 1; Bosi M. 1; Calicchio, M 1; Martinez, O 2; Hortelano, V 2
AFM morphological characterization and Raman study of germanium grown on (111)GaAs
(2012) in Surface science
Bosi M 1; Attolini G 1; Watts BE 1; Roncaglia A 2; Poggi A 2; Mancarella F 2; Moscatelli F 2; Belsito L 2; Ferri M 2
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si
(2012) in Materials science forum
C. Ferrari, G. Attolini, M. Baldini, M. Bosi, M. Calicchio, C. Frigeri, E. Gombia, and F. Rossi
Epitaxial germanium for photovoltaic or opto-electronic applications
(2012) International Conference on Advanced Materials (ICAM) 2012, Chennai, India, January 5-7, 2012
G. Attolini1, M. Baldini1, M. Bosi1, E. Buffagni1, C. Ferrari1, C. FRIGERI1, E. Gombia1, F. Melino1, J.Sophia Ponraj1,2,3
III-V and Ge homo and hetero-hepitaxy layers grown by MOVPE
(2012) Fourth European Conference on Crystal Growth (ECCG4), Glasgow (UK), 17-20 June 2012
L. Aversa, R. Tatti, R. Verucchi, M.V.Nardi, F. Fabbri, F. Rossi, G. Attolini, M. Bosi, G. Salviati, S. Iannotta
3C-SiC Nanowires functionalized with Porphyrins by Supersonic Molecular Beams for Photodynamic Therapy
(2012) Workshop on Nanotechnologies for HealthCare, Trento, 25-26/05/2012
Giovanni Attolini, Francesca Rossi, Matteo Bosi, Bernard Enrico Watts, and Giancarlo Salviati
The effect of substrate type on SiC nanowire orientation
(2011) in Journal of nanoscience and nanotechnology (Print)
Watts, Bernard Enrico E.1, Attolini, Giovanni1, Rossi, Francesca1, Bosi, Matteo1, Salviati, Giancarlo1, Mancarella, Fulvio2, Ferri, Matteo2, Roncaglia, Alberto2, Poggi, Antonella2
beta-SiC NWs grown on patterned and MEMS silicon substrates
(2011) in Materials science forum
Watts, Bernard E. 1, Attolini, Giovanni 1, Besagni, Tullo 1, Bosi, Matteo 1, Ferrari, Claudio 1, Rossi, Francesca 1, Riesz, Ferenc 2, Jiang, Liudi 2
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates
(2011) in Materials science forum
M. Bosi, G. Attolini, C. Ferrari, C. Frigeri, M. Calicchio, E. Gombia, T. Asar, E. Boyali, U. Aydemir, S. Ozcelik, and M. Kasap
Epitaxial growth and electrical characterization of germanium
(2011) in Crystal Research and Technology
T. Prutskij1, C. Pelosi2, and G. Attolini2
Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities
(2011) in Crystal Research and Technology
Bosi, Matteo 1, Attolini, Giovanni 1, Ferrari, Claudio 1, Frigeri, Cesare 1, Calicchio, Marco 1, Rossi, Francesca 1, Kalman Vad 2, Attila Csik 2, Zsolt Zolnai 3
Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge
(2011) in Journal of crystal growth
Attolini, Giovanni (1); Frigeri, Cesare (1); Solzi, Massimo (3); Delgado, G. E. (4); Sagredo, Vicente (2)
A new semimagnetic compound: Cd1-xFexIn2S4 single crystal grown by CVT
(2011) in Crystal Research and Technology
Bosi, Matteo 1, Attolini, Giovanni 1, Watts, Bernard Enrico 1, Rossi, Francesca 1, Ferrari, Claudio 1, Riesz, Ferenc 2, Jiang, Liudi 3
Wafer curvature analysis in 3C-SiC layers grown on (0 0 1) and (1 1 1) Si substrates
(2011) in Journal of crystal growth
Bosi, Matteo, Attolini, Giovanni, Calicchio, Marco, Ferrari, Claudio, Frigeri, Cesare, Gombia, Enos, Motta, Alberto, Rossi, Francesca
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications
(2011) in Journal of crystal growth
M. Bosi, G. Attolini, M. Baldini, E. Buffagni, C. Ferrari, C. Frigeri, F. Melino, F. Rossi, S. Cecchi, F. Isa, G. Isella
Epitaxial Ge deposition on Ge/Si virtual substrates
(2011) XL Congresso Associazione Italiana di Cristallografia (AIC 2011), Siena, Italy, 19-22 settembre 2011
N. Musayeva, G. Attolini, M. Bosi, B. Clerjaud, R. Jabbarov, S. ?. Çetin, S. Özçelik ve T. Memmedli
Structural al optical characterization of GaInPN structures grown on Si substrate with MOVPE technique
(2011) 18. yogun madde fizigi, Ankara, 25 November 2011
N. Musayeva, R. Jabbarov, S. Abdullayeva, S. ?. Çetin, S. Özçelik, T. Memmedli, G. Attolini, M. Bosi ve B. Clerjaud
Growth and characterization of GaAs1-xNx epilayers
(2011) 18. yogun madde fizigi, Ankara, 25 november 2011
Bosi M.; Attolini G.; Calicchio M.; Gombia E.
A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications
(2010) European Photovoltaic Conference 2001, Hamburg, Germany, 7 Sept 2009, Hamburg, Germany
Bosi M.; Attolini G.; Ferrari C.; Frigeri C.; Calicchio M.; Rossi F.; Vad K.; Csik A.; Zolnai Z.
Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge
(2010) The 16th International Conference on Crystal Growth, Beijing (Cina), 8-13 Aug., 2010
Bosi M.; Attolini G.; Calicchio M.; Ferrari C.; Frigeri C.; Gombia E.
Homoepitaxial growth of germanium for photovoltaic and thermophotovoltaic applications
(2010) The 16th International Conference on Crystal Growth, Beijing (Cina), 8-13 Aug., 2010
F. Fabbri, F. Rossi, G. Attolini, G. Salviati, S. Iannotta, L. Aversa, R. Verucchi, M. Nardi, N. Fukata, B. Dierre, and T. Sekiguchi
Optical, Structural and Interface Characterization of Single SiO2-SiC Core-Shell Nanowires Grown with a Low-Cost Method
(2010) in Microscopy and microanalysis (Print)
Attolini G.; Bosi M.; Rossi F.; Watts B. E.; Salviati G.; Battistig G.; Dobos L.; Pecz B.
SiC epitaxial growth on Si(100) substrates using carbon tetrabromide
(2010) in Materials science forum
Watts, B. E.; Bosi, M.; Attolini, G.; Battistig, G.; Dobos, L.; Pecz, B.
CBr4 as precursor for VPE growth of cubic silicon carbide
(2010) in Crystal research and technology (1981)
Bosi M.; Attolini G.
Germanium: Epitaxy and its applications
(2010) in Progress in crystal growth and characterization of materials
Rossi F.; Fabbri F.; Attolini G.; Bosi M.; Watts B. E.; Salviati G.
TEM and SEM-CL studies of SiC Nanowires
(2010) in Materials science forum
Martinez O.; Hortelano V.; Jimenez J.; Parra V.; Pelosi C.; Attolini G.; Prutskij T.
Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces
(2010) in Journal of electronic materials
Fabbri F. a; Rossi F. a; Attolini G. a; Salviati G. a; Iannotta S. a; Aversa L. b; Verucchi R. b; Nardi M. b; Fukata N. c; Dierre B. d; Sekiguchi T. d
Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: the case of SiC/SiO2 core/shell self-organized nanowires
(2010) in Nanotechnology (Bristol. Print)
Ferrari C.; Attolini G.; Bosi M.; Gombia E.; Armani N.; Rossi F.; Capellini G.; Colace L.
Epitaxial germanium for photovoltaic or opto-electronic applications
(2010) in , 2010
Attolini G.; Rossi F.; Fabbri F.; Bosi M.; Salviati G.; Watts B. E.
Cubic SiC Nanowires: Growth, Characterization and Applications
(2010) InTech, Rijeka (Croazia) in , 2010
Watts B. E.; Attolini G.; Rossi F.; Salviati G.; Mancarella F.; Ferri M.; Roncaglia A.; Poggi A.
ß-SiC NWs grown on patterned and MEMS silicon substrates
(2010) 8th European Conference on Silicon Carbide and Related Materials - 2010, Oslo
Bosi M.; Attolini G.; Watts B. E.; Ferrari C.; Riesz F.; Jiang L.
Curvature and stress analysis in 3C-SiC layers grown on (001) and (111) Si substrates
(2010) 16th International Conference on Crystal Growth, Beijing
Watts B. E.; Attolini G.; Besagni T.; Bosi M.; Ferrari C.; Rossi F.; Riesz F.; Jiang L.
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates
(2010) 8th European Conference on Silicon Carbide and Related Materials 2010, Oslo
Musayeva N.; Abdullayeva S.; Jabbarov R.; Attolini G.; Calicchio M.; Ferrari C.; Gombia E.
Germanium epitaxy in photovoltaic application
(2010) 14° International Conference on Laser Optics 2010, St.Petersburg
Ricciardi C.; Canavese G.; Castagna R.; Ferrante I.; Marasso S.; Ricci A.; Watts B. E.; Attolini G.; Bosi M.; Nasi L.; Ranzieri P.
Mechanical characterization of 3C-SiC grown on Si micromachined cantilever
(2010) 8th European Conference on Silicon Carbide and Related Materials - 2010, Oslo
Bosi M.; Attolini G.; Rossi F.; Watts B. E.; Salviati G.
The effects of substrate Type on of SiC Nanowires Orientation
(2010) The Sixteenth International Conference on Crystal Growth, Beijing
Attolini G.; Rossi F.; Bosi M.; Watts B. E.; Salviati G.; Melucci M.
Surface Functionalization of 3C-SiC Nanowires
(2010) X International Conference on Nanostructured Materials, Roma
Bosi M.; Attolini G.; Ferrari C.; Frigeri C.; Gombia E.; Asar T.; Boyali E.; Ozcelik S.; Kasap M.
Epitaxial germanium growth and electrical characterization
(2010) Italian Crystal Growth Progress in Functional Materials Conference, Parma
Ferrari C.; Attolini G.; Armani N.; Bosi M.; Rossi F.; Frigeri C.; Gombia E.
Relazione sulle attività completate nel 4° semestre, periodo 20/09/2009-20/02/2010 del progetto 1
(2010)
Ferrari C.; Attolini G.; Armani N.; Melino F.
Nuove tecnologie e strumenti per l'efficienza energerica e l'utilizzo delle fonti rinnovabili negli usi finali civili
(2010)
Bosi M.; Attolini G.; Calicchio M.; Ferrari C.; Gombia E.
A study of surface passivation layers for homoepitaxial germanium cells for photovoltaic and thermophotovoltaic applications
(2009) 24th European Photovoltaic Solar Energy Conference and Exhibition, Amburgo, Germania
Bosi M.; Watts B. E.; Attolini G.; Ferrari C.; Frigeri C.; Salviati G.; Poggi A.; Mancarella F.; Roncaglia A.; Martinez Sacristan O.; Hortelano V.
Growth and Characterization of 3C-SiC Films for Micro Electro Mechanical Systems (MEMS) Applications
(2009) in Crystal growth & design
Abdullayeva S.; Musayeva N.; Jabbarov R.; Pelosi C.; Attolini G.; Bosi M.; Clerjaud B.; Benalloul P.; Barthou C.
GaInPN/Si HETEROSTRUCTURE GROWTH BY METAL-ORGANIC VAPOUR PHASE EPITAXY
(2009) in Fizika B (Zagreb)
Sagredo V.; Attolini G.; Musayeva N.
Mn1−xFexIn2Se4 SINGLE CRYSTALS AND THEIR ELECTRICAL PROPERTIES
(2009) in International journal of materials engineering and technology
Frigeri C.; Attolini G.; Bosi M.; Pelosi C.; Germini F.
Parasitic Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs: A Study by the Chemically Sensitive (200) Diffraction
(2009) in Journal of the Electrochemical Society
Frigeri C.; Attolini G.; Bosi M.; Pelosi C.; Germini F.
Evaluation of the composition of the interlayer at the inverted interface in InGaP/GaAs heterojunctions
(2009) in Superlattices and microstructures
Attolini G.; Watts B. E.; Bosi M.; Rossi F.; Riesz F.
A comparative study of the morphology of 3C-SiC grown at different C/Si ratios
(2009) in Materials science forum
Attolini G.; Rossi F.; Fabbri F.; Bosi M.; Watts B. E.; Salviati G.
A new growth method for the synthesis of 3C-SiC nanowires
(2009) in Materials letters (Gen. ed.)
Attolini G.; Watts B. E.; Bosi M.; Rossi F.; Riesz F.
A study of the morphology of 3C-SiC layers grown at different C/Si ratios
(2009) Euro CVD 17/ CVD 17, Vienna, 4-9 Oct. 2009
Attolini G.; Bosi M.; Calicchio M.; Ferrari C.; Frigeri C.; Vad K.; Csik A.; Zolnai Z.
Interdiffusion study in MOVPE grown Ge/GaAs and GaAs/Ge heterojunctions
(2009) EW-MOVPE XIII, Ulm, Germania, 6-10 June 2009
Bosi M.; Attolini G.; Watts B. E.; Frigeri C.; Rossi F.; Poggi A.; Roncaglia A.; Mancarella F.; Martinez O.; Hortelano V.
Strain evaluation in SiC MEMS test structures
(2009) EURO CVD 17 / CVD 17, Vienna, 4-9 Oct. 2009
Attolini G.; Bosi M.; Calicchio M.; Martinez O.; Hortelano V.
AFM and Raman scattering study of Ge/GaAs (100), (111)A and B heterostructures grown by MOVPE
(2009) EW-MOVPE XIII, ULM, Germania
M. Bosi, G. Attolini, B.E. Watts, C. Frigeri, F. Rossi, A. Poggi, A. Roncaglia, F. Mancarella, O. Martínez, V. Hortelano,
Strain Evaluation in SiC MEMS Test Structures
(2009) EuroCVD 17/ CVD 17, vienna, 4-9 Oct. 2009
Bosi M.; Attolini G.; Watts B. E.; Frigeri C.; Rossi F.; Poggi A.; Roncaglia A.; Mancarella F.; Martinez O.; Hortelano V.
Stresses in SiC MEMS test structures
(2009) Workshop on Advanced Semiconductor Materials and devices for Power Electronics applications (WASMPE 2009), Catania, 7-8 May 2009
Rossi F.; Fabbri F.; Attolini G.; Salviati G.; Bosi M.; Watts B. E.; Dierre B.; Fukata N.; Sekiguchi T.
βC-SiC/SiO2 core-shell nanowires studied by TEM and SEM-CL
(2009) Microscopy of Semiconducting Materials XVI, Oxford (England)
Attolini G.; Rossi F.; Bosi M.; Watts B. E.; Salviati G.
3C-SiC nanowires and layers grown on Si: attractive material for biosensor applications
(2009) Nanotec 2009, Roma
Rossi F.; Fabbri F.; Attolini G.; Bosi M.; Watts B. E.; Salviati G.
TEM and SEM-CL studies of SiC Nanowires
(2009) 13th International Conference on Silicon Carbide and Related Materials (ICSCRM) 2009, Nurnberg (Germany)
Attolini G.; Bosi M.; Rossi F.; Watts B. E.; Salviati G.; Battistig G.; Dobos L.; Pecz B.
SiC epitaxial growth on Si(100) substrates using carbon tetrabromide
(2009) 13th International Conference on Silicon Carbide and Related Materials (ICSCRM), Nurnberg (Germany)
Attolini G.; Bosi M.; Rossi F.; Watts B. E.; Pecz B.; Battistig G.
Growth and characterization of 3C-SiC grown using CBr4 as a precursor
(2009) WASMPE'09, Catania
Attolini G.; Rossi F.; Bosi M.; Watts B. E.; Fabbri F.; Salviati G.
Growth and characterization of b-SiC and SiO2/b-SiC core-shell nanowires
(2009) WASMPE 09, Catania
L. Aversa, R. Verucchi, M.V. Nardi, M. Bosi, G. Attolini, F. Rossi, B. Watts, L. Nasi, G. Salviati, S. Iannotta
SiC functionalization by porphyrin supersonic molecular beams
(2009) 26th European Conference on Surface Science (ECOSS 26),, Parma
Bosi M.; Ferrari C.; Attolini G.; Frigeri C.; Gombia E.; Pelosi C.; Arumainathan S.; Musayeva N.
MOVPE Growth of Homoepitaxial of Germanium Cells for Photovoltaic and Thermophotovoltaic Applications Using Iso-Buthyl Germane as Organic Precursor
(2008) 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia (Spain), 1-5 Sept. 2008
Ferrari C.; Bosi M.; Attolini G.; Frigeri C.; Gombia E.; Pelosi C.; Arumainathan S.; Musayeva N.
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications
(2008) ASDAM 2008 Conference (The 7th International Conference on Advanced Semiconductor Devices and Microsystems), Smolenice (SK), Oct. 12-16, 2008
Attolini G.; Bosi M.; Musayeva N.; Pelosi C.; Ferrari C.; Arumainathan S.; Timò G.
Homo and hetero epitaxy of Germanium using isobutylgermane
(2008) in Thin solid films (Print)
Watts B. E.; Attolini G.; Bosi M.; Frigeri C.
A novel mechanism to explain wafer bending during the growth of SiC films on Si
(2008) in Materials letters (Gen. ed.)
Bosi M. a; Attolini G. a; Ferrari C. a; Frigeri C. a; Rimada Herrera J. C. a; Gombia E. a; Pelosi C. a; Peng R.W. b
MOVPE growth of homoepitaxial germanium
(2008) in Journal of crystal growth
Frigeri C.; Attolini G.; Bosi M.; Watts B. E.
Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivity
(2008) in Journal of materials science. Materials in electronics
Fabbri F.; Cavallini A.; Attolini G.; Rossi F.; Salviati G.; Dierre B.; Fukata N.; Sekiguchi T.
Cathodoluminescence characterization of beta-SiC nanowires and surface-related silicon dioxide
(2008) in Materials science in semiconductor processing
Attolini G.; Rossi F.; Bosi M.; Watts B. E.; Salviati G.
Synthesis and characterization of 3C-SiC nanowires
(2008) in Journal of non-crystalline solids
Frigeri C.; Attolini G.; Bosi M.; Germini F.; Pelosi C.
Detection of the Interlayer at the GaAs-on-InGaP Interface in MOVPE InGaP/GaAs by the Dark Field Method
(2008) in Journal of materials science. Materials in electronics
Musayeva N.; Abdullayeva S.; Pelosi C.; Attolini G.; Bosi M.; Clerjaud B.; Benalloul P.; Barthou C.; Jabbarov R.; Gambarov R.
GROWTH AND CHARACTERIZATION OF GaAs1-xNx EPITAXIAL LAYERS
(2008) in Fizika (Baku)
Attolini, G.; Bosi, M.; Musayeva, N.; Pelosi, C.; Ferrari, C.; Arumainathan, S.; Timò, G.
Homo and hetero epitaxy of Germanium using isobutylgermane
(2008) in Thin solid films (Print)
Ferrari C.; Bosi M.; Attolini G.; Frigeri C.; Gombia E.; Pelosi C.; Arumainathan S.; Musayeva N.
Characterization of homoepitaxial germanium p-n junctions for photovoltaic and thermophotovoltaic applications
(2008) in Proceedings of the IEEE
C. Ferrari 1, M. Bosi 1, G. Attolini 1, C. Frigeri 1, E. Gombia 1, C. Pelosi 1, S. Arumainathan 2 and N. Musayeva 3
Characterization of homoepitaxial germanium p-n junction for photovoltaic and thermophotovoltaic applications
(2008) 7th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice (SLOVAKIA), OCT 12-16, 2008
Bosi M.; Attolini G.; Ferrari C.; Frigeri C.; Gombia E.; Pelosi C.
Epitaxial preparation of germanium cells for photovoltaic and thermophotovoltaic applications
(2008) Venezia Nanotec 2008 - convegno internazionale sulle nanotecnologie, Venezia
Attolini G.; Bosi M.; Rossi F.; Watts B. E.; Salviati G.
Cubic Silicon Carbide: a promising material for automotive application
(2008) Venezia NANOTEC 2008 - Convegno Internazionale sulle Nanotecnologie, Venezia
Watts B. E.; Attolini G.; Bosi M.; Frigeri C.
A novel mechanism to explain wafer bending during the growth of SiC on Si
(2008) Workshop Fabrication, Properties & Applications of Electroceramic Nanostructures / European Co-operation in the Field of Scientific and Technical Research, Genova
Frigeri C.; Attolini G.; Bosi M.; Pelosi C.; Germini F.
Composition determination of the interlayer at the inverted interfaces in InGaP/GaAs heterojunctions
(2008) BIAMS 2008, 9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, Toledo (E)
B. E. Watts, G. Attolini, M. Bosi, C. Frigeri, C. Ferrari
Wafer Bending Mechanism During the Growth of SiC Films on Si
(2008) 7th European Conference on Silicon Carbide and Related Materials, Barcelona (E), 7-11 settembre 2008,
Frigeri C., Pelosi C., Germini F., Attolini G., Bosi M.
Combined (200) DF-TEM and X-ray diffraction investigations of interfacesin MOVPE grown InGaP/GaAs heterojunctions
(2007) in Physica status solidi. C, Current topics in solid state physics (Internet)
Navamathavan R., Arivuoli D., Attolini G., Pelosi C., Choi C. K.
Mechanical properties of some binary, ternry and quaternary III-V compound semiconductor alloys
(2007)
Plá J., Barrera M., Rubinelli F., García J., Socolovsky H., Bosi M., Attolini G., Pelosi C.
AVANCES EN EL ESTUDIO DE CELDAS SOLARES BASADAS EN MATERIALES III-V
(2007) Avances en Energías Renovables y Medio Ambiente, Vol. 11
Pelosi C., Bosi M., Attolini G., Germini F., Frigeri C., Prutskij T.
TEM and HRXRD analysis of LP MOVPE grown InGaP/GaAs epilayers
(2007) 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna (Austria), July 24-28, 2006
G. Attolini 1, B. Watts 1, M. Bosi 1, C. Frigeri 1, C. Ferrari 1, G. Salviati 1, T. Besagni 1, S. Kaciulis 2, L. Pandolfi 2
Carburisation layers for the growth of silicon carbide on silicon
(2007) 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006, Perth, Australia, 6-8 December 2006
C. Frigeri, G. Attolini, M. Bosi, B. Watts
Characterization of 3C-SiC grown on Si substrates with different conductivity
(2007) DRIP XII, 12th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors, Berlin (D), 9 - 13 sett. 2007
Musayeva N., Pelosi C., Attolini G., Bosi M., Clerjaud B., Benalloul P., Barthou C., Jabbarov R., Abdullayeva S., Marino I.
MOVPE growth and characterization of GaAs1-xNx epitaxial layers
(2007) Congresso Annuale della società Italiana di fisica, Pisa
Geetha D., Arivuoli D., Attolini G., Bosi M., Watts B.E.
Mechanical properties of epitaxially grown 3C-SiC/Si
(2007) Hetero-SiC 07, Grenoble (F)
Attolini G., Bosi M., Watts B.E., Frigeri C.
A Novel Mechanism to Explain Wafer Bending During the Growth of SiC Films on Si
(2007) Hetero-SiC 07, Grenoble (F), 28-29 giugno 2007
Bosi M., Attolini G., Watts B.E., Frigeri C., Kaciulis S., Pandolfi L., Salviati G.
A study of the nucleation of 3C-SiC thin layers on silicon
(2007) Hetero-SiC 07, Grenoble (F), 28-29 giugno 2007
Battistig G., Horváth Zs.E., Dobos L., Attolini G., Bosi M., Watts B.E.
Epitaxial growth of SiC on Si covered by SiC nanocrystals
(2007) E-MRS Spring Meeting, Strasbourg (F)
Frigeri C., Bosi M., Attolini G., Watts B.E.
Characterisation of 3C-SiC grown on Si substrates with different conductivity
(2007) DRIP XII, 12th International Conference on defects: Recognition, Imaging and Physics in Semiconductors, Berlin (D)
Frigeri C., Attolini G., Bosi M., Germini F., Pelosi C.
On the nature of the interlayer at the interface in MOVPE InGaP/GaAs heterojunctions
(2007) 12th European Workshop on Metalorganic Vapour phase Epitaxy, Bratislava (SK), 3-6 giugno 2007
Attolini G. , Bosi M., Musayeva N., Pelosi C., Ferrari C., Arumainathan S., Timò L., Lamare B.
The use of Arsenic as surfactant in the epitaxy of Germanium
(2007) EWMOVPE 2007, Bratislava (SK)
Frigeri C., Attolini G., Bosi M., Germini F., Pelosi C.
Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the Dark Field Method
(2007) DRIP XII, 12th International Conference on defects: Recognition, Imaging and Physics in Semiconductors, Berlino (D), 9 - 13 sett. 2007
Attolini G. , Bosi M., Musayeva N., Pelosi C., Ferrari C., Arumainathan S., Timò L.
Homo and hetero epitaxy of Germanium using isobutylgermane
(2007) ICSI-5, Marseille (F)
Pelosi C., Musayeva N., Attolini G., Bosi M., Clerjaud B., Benalloul P., Barthou C., Jabbarov R., Abdullayeva S., Marino I.
Heteroepitaxial MOVPE growth of GaInPN alloys on Si
(2007) First International Conference on Material and Information Sciences in High Technologies MISHT-2007, Baku, Azerbaijan
Ferrari C., Armani N., Arumainathan S., Attolini G., Bosi M., Musayeva N., Pelosi C.
Germanium homoepitaxial cells for thermophotovoltaic systems
(2007) XVIII congresso della società italiana del vuoto, Firenze
Armani N., Ferrari C., Mazzer M., Salviati G., Bosi M., Attolini G.
Materiali e dispositivi per generatori termofotovoltaici
(2007) Cogenerazione distribuita per applicazioni civili e residenziali, Ferrara
Pelosi C., Musayeva N., Attolini G., Bosi M., Clerjaud B., Benalloul P., Barthou C., Jabbarov R., Abdullayeva S., Marino I.
Raman and photoluminescence studies of MOVPE grown GaAs1-xNx epitaxial layers
(2007) First International Conference on Material and Information Sciences in High Technologies MISHT-2007, Baku, Azerbaijan
Bosi M., Attolini G., Musayeva N., Arumainathan S., Pelosi C., Ferrari C.,
Growth and characterization of Ge homoepitaxual structures for thermofotovoltaic application by metal organic chemical vapour deposition.
(2007)
Frigeri C., Attolini G., Bosi M., Germini F., Pelosi C., Calicchio M.
Detailed DF-TEM and X-ray diffraction investigations of interfaces in MOVPE grown InGaP/GaAs heterojunctions
(2006) EXMATEC '06, 8th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Cádiz (E), 14-17 maggio 2006
Navamathavan R., Ganesan V., Arivuoli D., Attolini G., Pelosi C., Choi C. K.
Characterization of surface deformation around Vickers indentations in InGaAsP epilayers on InP substrate
(2006) in Applied surface science
Navamathavan R., Arivuoli D., Attolini G., Pelosi C., Choi C. K.
Microindentation studies of Hg0,7Cd0,3Te/CdTe compound semiconductor alloy
(2006) in Materials letters (Gen. ed.)
Pelosi C., Attolini G., Bosi M., Prutskij T.
Thermodynamic study of interface between InGaP/GaAs and GaAs/InGaP heterosystems
(2006) in Journal de physique. IV
Pelosi C., Attolini G., Bosi M.
The properties of GaInP/GaAs heterostructures as a function of growth temperature
(2006) in Journal de physique. IV
Torres T., Sagredo V., de Chalbaud LM., Attolini G., Bolzoni F.
Magnetic and structural characterization of the semiconductor FeIn2Se4
(2006)
Pelosi C., Attolini G., Bosi M., Avella M., Calicchio C., Musayeva N.
Characterisation of GaAsN layers grown by MOVPE
(2006) in Journal of crystal growth
Pelosi C., Attolini G., Bosi M., Moscatelli D., Veneroni A., Masi M.
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates
(2006) in Journal of crystal growth
Plá J., Barrera M., Bosi M., Pelosi C., Attolini G., Rubinelli F., Fortin F., Martínez Bogado M.G.
Colaboración italo-argentina para el estudio de celdas solares basadas en materiales III-V
(2006)
Pelosi, C; Attolini, G; Bosi, M; Avella, M; Calicchio, M; Musayeva, N; Jimenez, J
Characterisation of GaAsN layers grown by MOVPE
(2006) in Journal of crystal growth
Pelosi C., Bosi M., Attolini G., Germini F., Frigeri C.
Structural Analysis of InGaP/GaAs Layers Grown by MOVPE
(2006) XXXV Congresso Nazionale della AIC (Associazione Italiana di Cristallografia), Ferrara
Pelosi C., Bosi M., Attolini G., Calicchio M., Germini F., Frigeri C., Prutskij T.
TEM and HRXRD analysis of PLP MOVPE grown InGaP/GaAs epilayers
(2006) ICPS 2006, 28th International Conference on the Physics of Semiconductors, Vienna (A)
Attolini G., Watts B.E., Bosi M., Frigeri C., Ferrari C., Salviati G., Besagni, T. Kachroo S.K., Pandolfi L.
Characterization of 3C-SiC layers grown by VPE
(2006) COMMAD '06, 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, Perth (Australia), 06-08 dicembre 2006
Attolini G., Bosi M., Watts B.E., Regonini D., Calicchio M.
A Reactor for the Metal-Organic Vapour Deposition of Silicon Carbide
(2006) XXXV Congresso Nazionale Associazione Italiana di Cristallografia, Ferrara
Attolini G., Watts B., Bosi M., Frigeri C., Ferrari C., Salviati G., Besagni T., Kaciulis S., Pandolfi L.
Growth and Characterization of 3C-SiC layers grown by VPE
(2006) XXXV Congresso Nazionale Associazione Italiana di Cristallografia, Ferrara
Attolini G., Bosi M., Watts B.E., Leccabue F., Besagni T., Salviati G., Ferrari C., Frigeri C., Rossi F., Kaciulis R., Pandolfi L.
Growth of 3C Silicon Carbide on Silicon by MOCVD I
(2006)
C. Frigeri, C. Pelosi, M. Bosi, G. Attolini, M. Calicchio, F. Germini
Interface studies of InGaP epilayers grown by LP MOVPE
(2005) DRIP XI, 11th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors,, Beijing (Cina), 15 - 19 sett. 2005
Sagredo V., Torres T., Attolini G., Bolzoni F.
Mn1-xFexIn2Se4:a new layered semiconductor system
(2005) in Journal of physics and chemistry of solids
Pelosi C., Attolini G., Bosi M., Frigeri C., Bersani M., Giubertoni D., Vanzetti L., Musayeva N.
Thermodynamical analysis of abrupt interfaces of InGaP/GaAs and GaAs/InGaP heterostructures
(2005) in Crystal research and technology (1981)
Attolini G., Sagredo V., Mogollon L., Torres T., Frigeri C.
Growth and characterization of FexMn1-xIn2Se4 (0 x 1) single crystals
(2005) in Crystal research and technology (1981)
Moscatelli D., Veneroni A., Cavallotti C., Masi M., Bosi M., Attolini G., Pelosi C.
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modling
(2005) in Crystal research and technology (1981)
Sagredo V., Delgado G.E. , ter HaarE., Attolini G.
Crystal Growth and Characterization of MnIn2-2x Ga2x Se4
(2005) in Journal of crystal growth
M.Bosi (1), J. Plà (2), G. Attolini (1), M. Calicchio (1), C. Pelosi (1)
M.Bosi , J. Plà, G. Attolini , M. Calicchio , C. Pelosi
Celle solari: rassegna teorica e applicativa
M.Bosi (1), J. Plà (2), G. Attolini (1), M. Calicchio (1), C. Pelosi (1)
M.Bosi , J. Plà, G. Attolini , M. Calicchio , C. Pelosi
(2005)
G.ATTOLINI, M.BOSI, M.CALICCHIO, D.REGONINI, B.E.WATTS
REATTORE EPITASSIALE PER CARBURO DI SILICIO
(2005)
C. Pelosi 1, G. Attolini 1, C. Frigeri 1, M. Bersani 2, D. Giubertoni 2, L. Vanzetti 2, R. Kudela 3
Interface analysis of InGaP/GaAs and GaAs/InGaP heterosystems
(2004) ICCG14-IVVGE12, 14h International Conference on Crystal Growth in conjunction with the 12th International Conference on Vapor Growth and Epitaxy, Grenoble (France), 9-13 Agosto 2004
Martinez O., Pelosi C., Attolini G., Martin E., Sanz L.F., Jimenez J.
Influence of substrate growth temperature on the CuPt-type ordering in lattice-matched GaInP/GaAs heterostructures
(2004)
Pelosi C., Attolini G., Frigeri C., Bersani M., Giubertoni D., Vanzetti L., Kudela R.
In-depth analysis of the interfaces in InGaAs/InGaP heterosystem
(2004) in EPJ. Applied physics (Print)
Paorici C., Attolini G.
Vapour Growth of bulk Crystal of bulk crystal by PVT and CVT
(2004) in Progress in crystal growth and characterization of materials
Gregusova D., Cambel V., Kudela R., Soltys J., Kostie I., Attolini G., Pelosi C.
Investigation of the GaAs-pyramids overgrowth using MOCVD
(2003) in Journal of crystal growth
Scardova S., Pelosi C., Attolini G., Lo B., Martinez O., Martin E., Ardila A. M., Imenez J.
Optical and morphological chacteristics of LPMOVPE grown lattice matched GaInP/GaAs heterostructures
(2003)
Frigeri C., Attolini G., Pelosi C.
Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE
(2003) in Physica status solidi. A, Applied research
Sagredo V., Attolini G.
Structural and magnetic properties of II-III2-VI4 semimagnetic semiconductors
(2003) in , 2003
Pelosi C.1, Attolini G.1, Frigeri C.1, Bersani M.2, Giubertoni D.2, Vanzetti L.2, Kudela R.3
In-depth analysis of the interfaces in GaAs/InGaP heterosystem
(2003) DRIP X - 10h International Conference on Defects: Recognition, Imaging and Physics of Semiconductors, Batz-sur-Mer (Francia), 29 sett. - 2 ott. 2003
Regonini D., Attolini G., Pelosi C., Watts B. E., Melioli E., Leccabue, F.
Aspetti generali della crescita epitassiale MOCVD
(2003)
C. Frigeri, G. Attolini and C. Pelosi
Heterogeneous nucleation of misfit dislocations in InGaP/GaAs layers grown by MOVPE
(2002) EXMATEC 2002, 6th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Budapest (Hungary), 26-29 maggio 2002
Attolini G., Scardova S., Germini F., Pelosi C., Martinez O., Sanz L.F., Gonzalez M.A., Jimenez J.
Optical and structural characterization of LP MOVPE grown lattice matched gainp/gaas heterostructures
(2002)
Sagredo V., ter Haar E., Attolini G.
Magnetic properties of MnGa(2)Se(4)MnIn(2)Se(4) single crystal semiconductors
(2002)
Fornari, R.; Bosi, M.; Armani, N.; Attolini, G.; Ferrari, C.; Pelosi, C.; Salviati, G.
Hydride vapour phase epitaxy growth and characterization of GaN layers
(2001) in Materials science & engineering. B, Solid-state materials for advanced technology
M. Pasini1, G. Attolini1, C. Pelosi1, C. Frigeri1, C. Bocchi1 and R. Kudela2
The morphological and structural characterization of LP-MOVPE grown InGaP/GaAs heterostructures
(2000) Colloque Annuel du GFCC - CRMC2, Marseille, Luminy (F), 15-17/05/2000
G. Attolini, C. B. Cao, R. Fornari, C. Frigeri, C. Pelosi and T. Besagni
Microstructure of hexagonal GaN grown on (001) GaAs by Hydride VPE
(1997) DGKK-AIC-SCC Annual Meeting, Freiburg im Breisgau (D), 5-7 March, 1997
Attolini, G; Chimenti, E; Pelosi, C; Lottici, PP; Carles, R
Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE
(1997) in Materials science & engineering. B, Solid-state materials for advanced technology
C. Pelosi, G. Attolini, C. Frigeri, F. Longo, M. Labardi and M. Allegrini,
The role of stoichiometric ratio on the very early growth stages of GaAs/Ge heterostructure
(1995) The Eleventh International Conference on Crystal Growth ICCG XI, The Hague (NL), 18-23 June 1995
C. PELOSI 1, G. ATTOLINI 1, C. BOCCHI 1, P. FRANZOSI 1, C. FRIGERI 1, M. BERTI 2, A.V. DRIGO 2 and F. ROMANATO 2
The role of V/III ratio in the growth and structural properties of Metalorganic Vapor Phase Epitaxy GaAs/Ge heterostructures
(1995) in Journal of electronic materials
C. Frigeri, G. Attolini, C. Pelosi, and F. Longo
Relationship between crystal defects, Ge outdiffusion and V/III ratio in MOVPE grown (001) GaAs/Ge
(1994) Mat. Res. Soc. Fall 93 Meeting, Boston (Usa), 29 Nov-3 Dic. 1993
C. Frigeri, G. Attolini, C. Pelosi, F. Longo
Relationship between V/III ratio and generation of defects in MOVPE grown (001) GaAs/Ge heterostructures
(1994) DRIP 5 Conference (Defect Recognition and Image Processing for Research and Development of Semiconductors), Santander (Spain), Sept. 06-10, 1993
C. Frigeri 1, G. Attolini 1, C. Pelosi 1, and A. Armigliato 2
Planar defects and misfit dislocations in (001) GaAs/Ge heterostructures MOCVD grown with different V/III ratio
(1993) 5th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology: GADEST 93, Chossewitz (D), Oct. 9-14, 1993
C. Frigeri, G. Attolini, C. Pelosi, and F. Longo
Relationship between crystal defects, Ge outdiffusion and V/III ratio in MOVPE grown (001) GaAs/Ge
(1993) MRS Fall 93 Meeting, Boston (Usa), 29 Nov-3 Dic. 1993
C. Pelosi, G. Attolini, C. Bocchi, P. Franzosi and C. Frigeri
The growth of GaAs/Ge heterostructures by MOVPE and their structural characterization
(1993) 5th European Workshop on MOVPE and Related Growth Technique, Malmoe (S), June 2-4, 1993
C. Frigeri, G. Attolini, C. Pelosi, F. Longo
Relationship between V/III ratio and formation of defects in MOCVD grown (001) GaAs/Ge heterostructures
(1993) DRIP 5 Conference (Defect Recognition and Image Processing for Research and Development of Semiconductors), Santander (Spain), Sept. 26-10 1993
C. Frigeri 1, G. Attolini 1, C. Pelosi 1, and A. Armigliato 2
Planar defects and misfit dislocations in (001) GaAs/Ge heterostructures MOCVD grown with different V/III ratio
(1993) 5th Int. Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology: GADEST 93, Chossewitz (D), Oct. 9-14, 1993
C. Pelosi1, G. Attolini1, C. Bocchi1, C. Frigeri1, A. Carnera2, M.L. Favaro2 and D. Ajò2
Ternary and quaternary III-V semiconductors grown by HVPE
(1992) EXMATEC '92 (1st Worshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies), Lyon (F), 19-22 May, 1992
C. Frigeri1, R. Gleichmann2, G. Attolini1, C. Pelosi1, C.A. Galeazzi1
Influence on the Cd and Hg interdiffusion on the dislocation formation in ISOVPE HgCdTe/CdTe epilayers
(1992) 12th General Conf. on the Condensed Matter Division of the European Physical Society, Praha (Cecoslovacchia), 6-9 April 1992
D. Arivuoli, G. Attolini, C. Bocchi, C. Pelosi, C. Frigeri
Growth of InGaAsP layers by hydride VPE
(1992) ", International Workshop on Characterization of Semiconductor Substrates and Structures, Smolenice-Bratislava (Cecoslovacchia), 1-4 April 1992
A. Carnera1, G. Attolini2, C. Frigeri2, C. Pelosi2, D. Ajò1, M.L. Favaro1
Epitaxial growth and Characterization of ternary and quaternary III-V semiconductors
(1992) 12th General Conf. on the Condensed Matter Division of the European Physical Society, Praha (Cecoslovacchia), 6-9 April 1992
C. Frigeri1, R. Gleichmann2, G. Attolini1, and C. Pelosi1
Electron microscopy study of HgCdTe/CdTe epistructures grown by ISOVPE
(1992) 10th European Congress on Electron Microscopy, Granada (Spagna), 7-11 Sept. 92
C. Frigeri a, R. Gleichmann b, C. Pelosi a, G. Attolini a
Relationship between dislocation generation, vapor phase supersaturation and growth rate in InP layers obtained by vapour phase epiaxy
(1991) in Materials science and engineering. B, Solid-state materials for advanced technology (Online)
C. Frigeri a, G. Attolini a, C. Pelosi a, R. Gleichmann b
Stacking fault pyramids, island growth and misfit dislocations in InxGa1-xAs/InP heterostructures grown by vapour phase epitaxy
(1991) in Materials science and engineering. B, Solid-state materials for advanced technology (Online)
C. Frigeri1, G. Attolini1, C. Pelosi1 and F. Corticelli2
Dependence of the defect structure of InxGa1-xAs/InP epilayers on the In/Ga ratio in the vapour phase
(1991) 1ST INTERNATIONAL CONF ON EPITAXIAL CRYSTAL GROWTH ( EPI-1 ), Budapest (H), APR 01-07, 1990
G. Attolini, C. Bocchi, C. Pelosi, C. Frigeri
The hydride VPE growth and the experimental condition study of quaternary InGaAsP Layers
(1991) 1ST ITALIAN WORKSHOP ON MATERIALS FOR PHOTONIC DEVICES, Taormina (I), MAY 27-31, 1991
C. Frigeri, G. Attolini, C. Pelosi
Stacking fault pyramids, island growth and misfit dislocations in VPE InGaAs/InP heterostructures
(1990) European Mat. Res. Soc. 1990 Fall Meeting, Strasbourg (F), Nov. 27-30, 1990
C. Frigeri1, G. Attolini1, C. Pelosi1 and F. Corticelli2
Dependence of the defect structure of InxGa1-xAs/InP epilayers on the In/Ga ratio in the vapour phase
(1990) 1st Int. Conf. on Epitaxial Crystal Growth, Budapest (H), April 1-7, 1990
C. FRIGERI, G. Attolini, C. Pelosi
Electron microscopy investigations of InxGa1-xAs epilayers
(1990) in Ultramicroscopy (Amst.)
C. Frigeri, G. Attolini, C. Pelosi and F. Corticelli1
HRTEM and CTEM study of differently lattice mismatched InxGa1-xAs/InP heterostructures grown by VPE
(1990) XIIth Int. Congress for Electron Microscopy, Seattle (USA), Aug. 12-18, 1990
E. Puron, B. E. Watts, F. Leccabue, A. Ghidini, R. Panizzieri, G. Attolini and O. de Melo
Some aspects of the liquid phase epitaxy growth of Hg1-xCdxTe using conventional slider and in situTe-rich solution preparation
(1990)
Attolini G., Bocchi C., Frigeri C., Pelosi C.,
The growth and characterization of InP-matched InGaAs layers
(1989) 9th Int. Conf. on Crystal Growth (ICCG-9, Sendai (Japan), 20-25/08/1989
G. ATTOLINI, C. BOCCHI, C. FRIGERI et C. PELOSI
Growth conditions analyis and characterization of high perfection InGaAs/InP layers grown by hydride VPE
(1989) in Journal de physique
C. Frigeri1, R. Gleichmann2, C. Pelosi1 and G. Attolini1
Dislocation Generation Mechanisms and Layer Growth in InP Epitaxy as a Function of Growth Conditions
(1989) Materials Research Society (MRS) 1988 Fall Meeting, Boston (Usa), NOV 28-DEC 03, 1988
Attolini G., Bocchi C., Frigeri C., Pelosi C.
Structural and microanalytical characterization of Hydride VPE grown InxGa1-xAs/InP heteroepitaxies
(1988) French-Italian-Swiss Workshop Fich-6: 'Structural and Microanalytical Characterization of Advanced Materials, Turin (Italy),, 13-14/04/88
C. Frigeri1, R. Gleichmann2, C. Pelosi1 and G. Attolini1
1 CNR-MASPEC Institute, via Chiavari 18/A, 43100 Parma, Italy 2 AdW-IFE Institute, 4050 Halle, Weinberg 2, German Democratic Republic
Dislocation Generation Mechanisms and layer growth in InP epitaxy as a function of growth conditions
C. Frigeri1, R. Gleichmann2, C. Pelosi1 and G. Attolini1
(1988) Materials Research Society (MRS) 1988 Fall Meeting, Boston (Usa), 28/11-03/12/1988
Frigeri C., Gleichmann R.1, Pelosi C., and Attolini G.,
TEM study of dislocation generation mechanisms in InP/InP layers as a function of growth conditions
(1988) in Institute of physics conference series
Attolini G., Frigeri C., Gleichmann R.1, Pelosi C.
Dislocation generation at the solid-vapour interface and hillock formation during the Hydride VPE growth of InP/InP layers
(1987) 7e Ecole d'Etè Mediterranèenne sur les Interfaces et la Liaison Chimique, Toulouse (F), 02-10/09/1987
Attolini G., Frigeri, C., Pelosi C., Salviati G.
SEM-EBIC, SEM-Cathodoluminescence, and TEM investigations of crystallographic and surface defects in Hydride VPE
(1986) XIth International Congress on Electron Microscopy, Kyoto (Japan), 31/08-07/09/1986
Attolini G., Frigeri C., Pelosi C., Salviati G.
Growth conditions and crystal defects in hydride VPE InP homoepitaxial layers
(1986) VIII International Conf. on Crystal Growth, York (UK), 13-18/07/1986
Attolini G., Frigeri C., Pelosi C., Salviati G., and Berti R.1
The effect of feeding phase stoichiometry on the origin of crystal defects in hydride VPE InP layers
(1986) 1986 Northeast Regional Meeting on 'Semiconductor-based heterostructures: interfacial structure and stability, Murray Hill - New Jersey (USA), 01-02/05/1986
G. Attolini, C. Frigeri, C. Pelosi, and G. Salviati
Electron beam induced current and cathodoluminescence study of the recombination activity of stacking faults and hillocks in hydride vapour phase epitaxy InP
(1986) in Applied physics letters (Online)
G. Attolini 1, C. Frigeri 1, C. Pelosi 1, G. Salviati 1 and R. Berti 2
The influence of PH3 flow rate on the origin of crystal defects in hydride VPE InP layers
(1986) 1986 Northeast Regional Meeting on 'Semiconductor-based heterostructures: interfacial structure and stability', Murray Hill - New Jersey (USA), MAY 01-02, 86
G.Attolini, C.Paorici, L.Zanotti, G.Zuccalli
Procedimento di preparazione di monocristalli di composti semiconduttori del gruppo II-VI di grandi dimensioni da fase vapore in ambiente di idrogeno
(1981)