Consiglio Nazionale delle Ricerche

Tipo di prodottoArticolo in rivista
TitoloEfficient X-Band Transmitter With Integrated GaN Power Amplifier and Supply Modulator
Anno di pubblicazione2019
  • Elettronico
  • Cartaceo
Autore/iCappello, Tommaso; Florian, Corrado; Niessen, Daniel; Paganelli, Rudi Paolo; Schafer, Scott; Popovic, Zoya
Affiliazioni autoriUniversity of Colorado; University of Bologna; Alpitron Srl; CNR-IEIIT; Qorvo Inc; University of Colorado
Autori CNR e affiliazioni
  • inglese
AbstractIn this paper, we present a high-efficiency transmitter based on an integrated circuit (IC) supply modulator implemented in the same 0.15-mu m gallium nitride (GaN)-on-SiC RF process as the power amplifier (PA) monolithic microwave IC. The X-band 10-W two-stage PA is designed for stable operation with minimal drain capacitance, which enables fast supply modulation. The multilevel supply modulator provides eight voltage levels with 3-bit digital control [(power digital-to-analog converter (pDAC)], achieving a state-of-the-art slew rate of 5 kV/mu s. Characterization of the dynamic R-ON of the GaN switches allows the development of an efficiency model for the pDAC and an investigation of the effects of the pDAC internal resistance on the PA performance, resulting in a comprehensive efficiency model for the supply-modulated PA. The flexible compact transmitter consisting of the PA and pDAC ICs shows high efficiency in back-off for a variety of signals, both for radar and communications. Measured results for amplitude- and frequency-modulated radar pulses show a composite power-added efficiency (CPAE) of 44% with a peak power of 10 W at 9.57 GHz, with simultaneous spectral confinement and 52-dB improvement of the first time sidelobe. For a 20-MHz high peak-to-average ratio LTE signal, the CPAE increases from 11% to 32% compared to a fixed supply voltage transmitter, while linearity under dynamic supply operation is maintained through digital predistortion.
Lingua abstractinglese
Altro abstract-
Lingua altro abstract-
Pagine da1601
Pagine a1614
Pagine totali14
RivistaIEEE transactions on microwave theory and techniques
Attiva dal 1963
Editore: Professional Technical Group on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, - New York, N.Y.
Paese di pubblicazione: Stati Uniti d'America
Lingua: inglese
ISSN: 0018-9480
Titolo chiave: IEEE transactions on microwave theory and techniques
Titolo proprio: IEEE transactions on microwave theory and techniques.
Titolo abbreviato: IEEE trans. microwave theor. tech.
Titoli alternativi:
  • Institute of Electrical and Electronics Engineers transactions on microwave theory and techniques
  • I.E.E.E. transactions on microwave theory and techniques
  • Transactions on microwave theory and techniques
  • Microwave theory and techniques
Numero volume della rivista67
Fascicolo della rivista4
Verificato da refereeSì: Internazionale
Stato della pubblicazionePublished version
Indicizzazione (in banche dati controllate)
  • ISI Web of Science (WOS) (Codice:000467524400029)
  • Scopus (Codice:2-s2.0-85064087598)
  • IEEE Xplore digital library (Codice:8639088)
  • INSPEC (Codice:18469023)
Parole chiaveEnvelope tracking (ET), gallium nitride (GaN), microwave monolithic integrated circuit (MMIC), power digital-to-analog converter (pDAC), supply modulation (SM)
Link (URL, URI)
Titolo parallelo-
Data di accettazione-
Note/Altre informazioni-
Strutture CNR
  • IEIIT — Istituto di elettronica e di ingegneria dell'informazione e delle telecomunicazioni
Moduli/Attività/Sottoprogetti CNR
  • DIT.AD001.020.001 : MICROSYS - Microsistemi integrati e Elettronica di potenza
Progetti Europei-