Consiglio Nazionale delle Ricerche

Tipo di prodottoArticolo in rivista
TitoloAn active bias network for the characterization of low-frequency dispersion in high-power microwave electron devices
Anno di pubblicazione2013
Formato
  • Elettronico
  • Cartaceo
Autore/iFlorian C.; Traverso P.A.; Santarelli A.; Filicori F.
Affiliazioni autoriDepartment of Electrical, Electronic and Information Engineering (DEI), University of Bologna, Bologna 40136, Italy Department of Electrical, Electronic and Information Engineering (DEI), University of Bologna, Bologna 40136, Italy Department of Electrical, Electronic and Information Engineering (DEI), University of Bologna, Bologna 40136, Italy Department of Electrical, Electronic and Information Engineering (DEI), University of Bologna, Bologna 40136, Italy
Autori CNR e affiliazioni
  • FABIO FILICORI
Lingua/e
  • inglese
AbstractIn this paper a new active bias network (ABN) for the technology- independent characterization of low-frequency (LF) dispersion in the output impedance and transadmittance of high-power microwave transistors is described. The proposed bias network is capable of synthesizing a high-impedance active DC-feed in the range of 10 Hz-1 MHz, where III-V microwave devices typically exhibit frequency response dispersion due to energy traps and/or self-heating. The input impedance values obtained in such a large bandwidth (five decades) are considerably higher than those that can be achieved with passive resistive and inductive solutions. In fact, these lead to severe limitations in terms of achievable impedance values, calibration accuracy, power handling capabilities, and physical dimensions. The ABN is particularly suitable for the characterization of high-voltage and high-current devices. In particular, here it is used, along with standard laboratory instrumentation, for the characterization of the LF dispersion of an AlGaN/GaN HEMT, suitable for microwave power amplifier applications. © 1963-2012 IEEE.
Lingua abstractinglese
Altro abstract-
Lingua altro abstract-
Pagine da2857
Pagine a2869
Pagine totali13
RivistaIEEE transactions on instrumentation and measurement
Attiva dal 1963
Editore: Institute of Electrical and Electronics Engineers. - New York,
Paese di pubblicazione: Stati Uniti d'America
Lingua: inglese
ISSN: 0018-9456
Titolo chiave: IEEE transactions on instrumentation and measurement
Titolo proprio: IEEE transactions on instrumentation and measurement.
Titolo abbreviato: IEEE trans. instrum. meas.
Titoli alternativi:
  • Transactions on instrumentation and measurement
  • Instrumentation and measurement
Numero volume della rivista62
Fascicolo della rivista10
DOI10.1109/TIM.2013.2263911
Verificato da refereeSì: Internazionale
Stato della pubblicazionePublished version
Indicizzazione (in banche dati controllate)
  • Scopus (Codice:2-s2.0-84884414290)
  • ISI Web of Science (WOS) (Codice:000324574200027)
Parole chiaveElectron device characterization, low-frequency dispersion, output impedance, transadmittance
Link (URL, URI)http://www.scopus.com/inward/record.url?eid=2-s2.0-84884414290&partnerID=q2rCbXpz
Titolo parallelo-
Data di accettazione-
Note/Altre informazioni-
Strutture CNR
  • IEIIT — Istituto di elettronica e di ingegneria dell'informazione e delle telecomunicazioni
Moduli CNR
  • ICT.P07.006.001 : Reti wireless per il monitoraggio ambientale e info-mobilità
Progetti Europei-
Allegati
An Active Bias Network (documento privato )
Tipo documento: application/pdf