Consiglio Nazionale delle Ricerche

Tipo di prodottoArticolo in rivista
TitoloGaN FET nonlinear modeling based on double pulse I/V characteristics
Anno di pubblicazione2014
Formato
  • Elettronico
  • Cartaceo
Autore/iSantarelli A.; Niessen D.; Cignani R.; Gibiino G.P.; Traverso P.A.; Florian C.; Schreurs D.M.M.-P.; Filicori F.
Affiliazioni autoriDepartment of Electrical, Electronic and Information Engineering guglielmo Marconi, University of Bologna, Bologna, 40136, Italy; Department of Electrical, Electronic and Information Engineering guglielmo Marconi, University of Bologna, Bologna, 40136, Italy; Department of Electrical, Electronic and Information Engineering guglielmo Marconi, University of Bologna, Bologna, 40136, Italy; Department of Electrical, Electronic and Information Engineering guglielmo Marconi, University of Bologna, Bologna, 40136, Italy; Department of Electrical, Electronic and Information Engineering guglielmo Marconi, University of Bologna, Bologna, 40136, Italy; Department of Electrical, Electronic and Information Engineering guglielmo Marconi, University of Bologna, Bologna, 40136, Italy; ESAT-TELEMIC, University of Leuven (KU Leuven), Leuven, B-3001, Belgium; Department of Electrical, Electronic and Information Engineering guglielmo Marconi, University of Bologna, Bologna, 40136, Italy;
Autori CNR e affiliazioni
  • FABIO FILICORI
Lingua/e
  • inglese
AbstractA state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique. Charge trapping phenomena are dealt with in terms of a nonlinear state equation, which describes the rate of change of the trap state as a function of its actual distance from the corresponding steady state. Model experimental validation is carried out, after on-wafer characterization of a 1-mm AlGaN-GaN on SiC FET, both under strong and mild nonlinear operation.
Lingua abstractinglese
Altro abstract-
Lingua altro abstract-
Pagine da3262
Pagine a3273
Pagine totali-
RivistaIEEE transactions on microwave theory and techniques
Attiva dal 1963
Editore: Professional Technical Group on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, - New York, N.Y.
Paese di pubblicazione: Stati Uniti d'America
Lingua: inglese
ISSN: 0018-9480
Titolo chiave: IEEE transactions on microwave theory and techniques
Titolo proprio: IEEE transactions on microwave theory and techniques.
Titolo abbreviato: IEEE trans. microwave theor. tech.
Titoli alternativi:
  • Institute of Electrical and Electronics Engineers transactions on microwave theory and techniques
  • I.E.E.E. transactions on microwave theory and techniques
  • Transactions on microwave theory and techniques
  • Microwave theory and techniques
Numero volume della rivista62
Fascicolo della rivista12
DOI10.1109/TMTT.2014.2364236
Verificato da refereeSì: Internazionale
Stato della pubblicazionePublished version
Indicizzazione (in banche dati controllate)
  • Scopus (Codice:2-s2.0-84916879517)
Parole chiaveField-effect transistors (FETs), gallium nitride (GaN), pulse measurements, semiconductor device modeling
Link (URL, URI)http://www.scopus.com/inward/record.url?eid=2-s2.0-84916879517&partnerID=q2rCbXpz
Titolo parallelo-
Data di accettazione-
Note/Altre informazioni-
Strutture CNR
  • IEIIT — Istituto di elettronica e di ingegneria dell'informazione e delle telecomunicazioni
Moduli CNR
    Progetti Europei-
    Allegati
    GaN_FET_Model_2pulse (documento privato )
    Tipo documento: application/pdf