Consiglio Nazionale delle Ricerche

Tipo di prodottoArticolo in rivista
TitoloCharacterization of the nonlinear thermal resistance and pulsed thermal dynamic behavior of AlGaN-GaN HEMTs on SiC
Anno di pubblicazione2013
Formato
  • Elettronico
  • Cartaceo
Autore/iFlorian C.; Santarelli A.; Cignani R.; Filicori F.
Affiliazioni autoriDepartment of Electrical, Electronic and Information Engineering (DEI), University of Bologna, Bologna 40136, Italy Department of Electrical, Electronic and Information Engineering (DEI), University of Bologna, Bologna 40136, Italy Department of Electrical, Electronic and Information Engineering (DEI), University of Bologna, Bologna 40136, Italy Department of Electrical, Electronic and Information Engineering (DEI), University of Bologna, Bologna 40136, Italy
Autori CNR e affiliazioni
  • FABIO FILICORI
Lingua/e
  • inglese
AbstractA laboratory setup, along with a set of measurement and identification procedures, have been developed expressly for the characterization of the thermal behavior of AlGaN/GaN HEMTs, suitable for microwave high power amplifier (HPA) design. The setup allows the measurement of the drain current time-domain dynamic response to positive drain bias pulses, performed at different temperatures and different dissipated power densities. The proposed measurement conditions discriminate thermal phenomena from electrical dispersive effects for this particular technology. Both the thermal resistance and the 'transient thermal resistance' are identified for a single-cell 1-mm device and for a 4-mm power-bar composed of four devices, designed to be used as the final stage of a monolithic $C$-band HPA for pulsed radar application. Transient data allow to compute the device operative channel temperature as a function of the pulsewidth and duty cycle, which is a crucial feature for pulsed HPA applications, typical for the GaN technology. The measured thermal data point out the nonlinearity of the thermal resistance versus dissipated power and base-plate temperature and the consequent critical thermal issue inherent in physically packing together such devices. © 1963-2012 IEEE.
Lingua abstractinglese
Altro abstract-
Lingua altro abstract-
Pagine da1879
Pagine a1891
Pagine totali13
RivistaIEEE transactions on microwave theory and techniques
Attiva dal 1963
Editore: Professional Technical Group on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, - New York, N.Y.
Paese di pubblicazione: Stati Uniti d'America
Lingua: inglese
ISSN: 0018-9480
Titolo chiave: IEEE transactions on microwave theory and techniques
Titolo proprio: IEEE transactions on microwave theory and techniques.
Titolo abbreviato: IEEE trans. microwave theor. tech.
Titoli alternativi:
  • Institute of Electrical and Electronics Engineers transactions on microwave theory and techniques
  • I.E.E.E. transactions on microwave theory and techniques
  • Transactions on microwave theory and techniques
  • Microwave theory and techniques
Numero volume della rivista61
Fascicolo della rivista5
DOI10.1109/TMTT.2013.2256146
Verificato da refereeSì: Internazionale
Stato della pubblicazionePublished version
Indicizzazione (in banche dati controllate)
  • Scopus (Codice:2-s2.0-84877725571)
  • ISI Web of Science (WOS) (Codice:000318700700015)
Parole chiaveChannel temperature, GaN HEMT, thermal resistance, transient thermal resistance
Link (URL, URI)http://www.scopus.com/inward/record.url?eid=2-s2.0-84877725571&partnerID=q2rCbXpz
Titolo parallelo-
Data di accettazione-
Note/Altre informazioni-
Strutture CNR
  • IEIIT — Istituto di elettronica e di ingegneria dell'informazione e delle telecomunicazioni
Moduli CNR
    Progetti Europei-
    Allegati
    Non-linear Thermal Resistance (documento privato )
    Tipo documento: application/pdf