Consiglio Nazionale delle Ricerche

Tipo di prodottoArticolo in rivista
TitoloHOT-VELM: a comprehensive and efficient code for fully vectorial and 3D Hot-Cavity VCSEL simulation
Anno di pubblicazione2009
FormatoElettronico
Autore/iP. Debernardi
Affiliazioni autoriIEIIT-CNR, Politecnico di Torino, 10129 Torino, Italy
Autori CNR e affiliazioni
  • PIERLUIGI DEBERNARDI VQR
Lingua/e
  • inglese
AbstractA model to simulate vertical-cavity surface-emitting laser (VCSEL) operation above threshold is presented. The power-current (PI) curves are computed while accounting for mode competition arising from spatial hole-burning and temperature profiles. The latter affect many laser parameters, such as the gain spectra and the optical modes, which change their shapes and wavelengths during operation. The aim of this comprehensive model is to describe the details of VCSEL operation above threshold in noncircularly symmetric geometries by preserving at the same time computational efficiency. The optical treatment is vectorial, using the in-house developed three dimensional (3-D) code. The model is based on a solution of the rate equations for field-carrier interactions. Similarly to the mature vectorial optical treatment, the numerical efficiency is achieved by expanding all the involved 3-D variables (current profiles, carrier densities, temperature and optical fields) in basis of simple analytical functions. The model is tested on a structure which has an epitaxial design based on a real device and a transverse geometry suitable to put in evidence all its 3-D features. In particular, the carrier expansion technique is validated by comparison with the commonly used carrier meshing procedure. The heating mechanisms are illustrated in detail and the effects which rule the power rollover and laser turn-off are compared and discussed within an improved injection model.
Lingua abstractinglese
Altro abstract-
Lingua altro abstract-
Pagine da979
Pagine a992
Pagine totali-
RivistaIEEE journal of quantum electronics
Attiva dal 1965
Editore: Institute of Electrical and Electronics Engineers, - [New York
Paese di pubblicazione: Stati Uniti d'America
Lingua: inglese
ISSN: 0018-9197
Titolo chiave: IEEE journal of quantum electronics
Titolo proprio: IEEE journal of quantum electronics.
Titolo abbreviato: IEEE j. quantum electron.
Titoli alternativi:
  • Journal of quantum electronics
  • I.E.E.E. journal of quantum electronics
Numero volume della rivista45
Fascicolo della rivista-
DOI10.1109/JQE.2009.2016762
Verificato da refereeSì: Internazionale
Stato della pubblicazione-
Indicizzazione (in banche dati controllate)
  • ISI Web of Science (WOS) (Codice:000268163800001)
Parole chiaveVCSEL, laser a semiconduttore
Link (URL, URI)http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5165102&contentType=Journals+%26+Magazines&searchField%3DSearch_All%26queryText%3DHOT+VELM
Titolo parallelo-
Data di accettazione-
Note/Altre informazioni-
Strutture CNR
  • IEIIT — Istituto di elettronica e di ingegneria dell'informazione e delle telecomunicazioni
Moduli CNR
    Progetti Europei-
    Allegati
    • HOT-VELM: A Comprehensive and Efficient Code for Fully Vectorial and 3-D Hot-Cavity VCSEL Simulation

    Dati storici
    I dati storici non sono modificabili, sono stati ereditati da altri sistemi (es. Gestione Istituti, PUMA, ...) e hanno solo valore storico.
    Area disciplinareComputer Science & Engineering
    Area valutazione CIVRIngegneria industriale e informatica
    Rivista ISIIEEE JOURNAL OF QUANTUM ELECTRONICS [42152J0]