@prefix prodottidellaricerca: . @prefix istituto: . @prefix prodotto: . istituto:CDS057 prodottidellaricerca:prodotto prodotto:ID36397 . @prefix pubblicazioni: . @prefix unitaDiPersonaleInterno: . unitaDiPersonaleInterno:MATRICOLA19935 pubblicazioni:autoreCNRDi prodotto:ID36397 . unitaDiPersonaleInterno:MATRICOLA8882 pubblicazioni:autoreCNRDi prodotto:ID36397 . unitaDiPersonaleInterno:MATRICOLA9603 pubblicazioni:autoreCNRDi prodotto:ID36397 . @prefix modulo: . modulo:ID2677 prodottidellaricerca:prodotto prodotto:ID36397 . @prefix rdf: . @prefix retescientifica: . prodotto:ID36397 rdf:type retescientifica:ProdottoDellaRicerca , prodotto:TIPO1101 . @prefix rdfs: . prodotto:ID36397 rdfs:label "TiO2 thin films from titanium butoxide: synthesis, Pt addition, structural stability, microelectronic processing and gas-sensing properties (Articolo in rivista)"@en . @prefix xsd: . prodotto:ID36397 pubblicazioni:anno "2008-01-01T00:00:00+01:00"^^xsd:gYear ; pubblicazioni:doi "10.1016/j.snb.2007.10.016"^^xsd:string . @prefix skos: . prodotto:ID36397 skos:altLabel "
Epifani M, Francioso L, Siciliano P, Helwig A, Mueller G, D\u00EDaz R, Arbiol J, Morante JR (2008)
TiO2 thin films from titanium butoxide: synthesis, Pt addition, structural stability, microelectronic processing and gas-sensing properties
in Sensors and actuators. B, Chemical (Print)
"^^rdf:HTML ; pubblicazioni:autori "Epifani M, Francioso L, Siciliano P, Helwig A, Mueller G, D\u00EDaz R, Arbiol J, Morante JR"^^xsd:string ; pubblicazioni:paginaInizio "599"^^xsd:string ; pubblicazioni:paginaFine "608"^^xsd:string ; pubblicazioni:numeroVolume "130"^^xsd:string . @prefix ns11: . prodotto:ID36397 pubblicazioni:rivista ns11:ID275676 ; skos:note "ISI Web of Science (WOS)"^^xsd:string ; pubblicazioni:affiliazioni "CNR-IMM, Sezione di Lecce; \nEADS, Monaco; \nEME/CeRMAE/IN2 Universit\u00E0 di Barcellona; \nTEM-MAT, Universit\u00E0 di Barcellona;"^^xsd:string ; pubblicazioni:titolo "TiO2 thin films from titanium butoxide: synthesis, Pt addition, structural stability, microelectronic processing and gas-sensing properties"^^xsd:string ; prodottidellaricerca:abstract "TiO2 thin films were prepared by spin-coating of a Ti butoxide-derived sol onto oxidized silicon wafers, followed by a heat-treatment at\ntemperatures ranging from 500 to 800 oC. The film thickness after heat-treatment at 500 oC was 50 nm. Pt addition, with a Pt:Ti nominal atomic\nratio ranging from 0.01 to 0.1, was achieved by adding solutions of Pt(II) acetylacetonate to the TiO2 sols. The thin films were investigated by\nX-ray diffraction, evidencing that Pt promoted the structural transformation of the starting anatase phase of TiO2 to rutile, with a more enhanced\neffect with increasing the Pt concentration and/or the heat-treatment temperature. High-resolution transmission electron microscopy evidenced\nthat, when a Pt:Ti atomic ratio of 0.05 and a heat treatment at 500 oC were used, the TiO2 contained both anatase and rutile phases and interspersed\nPt nanocrystals (2-3 nm). This result allowed attributing the structural transformation in TiO2 to the strain created by the Pt nanocrystals--a\nconclusion which was further corroborated by the observation that Pd-modified films, prepared under similar conditions, were only composed of\nanatase TiO2 and did not contain any Pd nanocrystals. The films heat-treated at 500 oC were able to withstand a full microelectronic processing\nsequence, including dry etching for gas sensors sensitive area definition, Ti/Pt contact formation, and heater processing on the backside of the\nsensor substrates. H2 gas-sensing tests evidenced that the anatase TiO2 phase was much more sensitive than the rutile one. The presence of Pt\nfurther enhanced the gas-sensing properties, lowering the optimum sensor operation temperature to about 330 oC and allowing for the detection of\na minimum H2 concentration of about 1000 ppm."@en ; prodottidellaricerca:prodottoDi istituto:CDS057 , modulo:ID2677 ; pubblicazioni:autoreCNR unitaDiPersonaleInterno:MATRICOLA8882 , unitaDiPersonaleInterno:MATRICOLA19935 , unitaDiPersonaleInterno:MATRICOLA9603 . ns11:ID275676 pubblicazioni:rivistaDi prodotto:ID36397 .