@prefix pubblicazioni: . @prefix unitaDiPersonaleInterno: . @prefix prodotto: . unitaDiPersonaleInterno:MATRICOLA42155 pubblicazioni:autoreCNRDi prodotto:ID35283 . @prefix prodottidellaricerca: . @prefix istituto: . istituto:CDS057 prodottidellaricerca:prodotto prodotto:ID35283 . @prefix rdf: . @prefix retescientifica: . prodotto:ID35283 rdf:type retescientifica:ProdottoDellaRicerca , prodotto:TIPO1101 . @prefix rdfs: . prodotto:ID35283 rdfs:label "Structural and optical properties of oxidized porous silicon layers activated by Zn2SiO4 : Mn2+ (Articolo in rivista)"@en . @prefix xsd: . prodotto:ID35283 pubblicazioni:anno "2002-01-01T00:00:00+01:00"^^xsd:gYear ; pubblicazioni:doi "10.1149/1.1456537"^^xsd:string . @prefix skos: . prodotto:ID35283 skos:altLabel "
Taghavinia N., Lerondel G., Makino H., Parisini A., Yamamoto A., Yao T., Kawazoe Y., Goto T. (2002)
Structural and optical properties of oxidized porous silicon layers activated by Zn2SiO4 : Mn2+
in Journal of the Electrochemical Society
"^^rdf:HTML ; pubblicazioni:autori "Taghavinia N., Lerondel G., Makino H., Parisini A., Yamamoto A., Yao T., Kawazoe Y., Goto T."^^xsd:string ; pubblicazioni:paginaInizio "251"^^xsd:string ; pubblicazioni:paginaFine "256"^^xsd:string ; pubblicazioni:numeroVolume "149"^^xsd:string . @prefix ns10: . prodotto:ID35283 pubblicazioni:rivista ns10:ID386878 ; skos:note "ISI Web of Science (WOS)"^^xsd:string ; pubblicazioni:affiliazioni "Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan\nDepartment of Physics, Tohoku University, Sendai 980-8578, Japan\nIstituto Lamel CNR, I-40129 Bologna, Italy"^^xsd:string ; pubblicazioni:titolo "Structural and optical properties of oxidized porous silicon layers activated by Zn2SiO4 : Mn2+"^^xsd:string ; prodottidellaricerca:abstract "Zn2SiO4:Mn2+ crystalline particles were grown into oxidized porous silicon \nlayers by chemical impregnation of porous silicon. The size of particles is \nabout 150 nm, with slight alignment in the direction of pores. X-ray \nmapping data and decay time measurements demonstrate that segregated \nZn2SiO4:Mn2+ particles have formed inside an oxidized porous silicon \nstructure. The layers emit green luminescence, which comes from the \nZn2SiO4:Mn2+ particles embedded in the porous layer. The oxidation of Si \nskeleton makes it transparent to the luminescence light. The pore size and \nskeleton size of the processed layers were found almost two times larger\nthan the starting porous silicon layers. Impregnation was found almost \nuniform in depth, i.e., 24% deviation from average. The luminescence decay \ntime decreases with increasing Mn content. At low temperature, the decay \ncurves show a saturating trend, while at higher temperatures this trend is \nless observable. These results can be explained using a model which \naccounts for the contribution of traps to the luminescence. The double \nexponential function which results from the model can well fit the decay \ncurves."@en ; prodottidellaricerca:prodottoDi istituto:CDS057 ; pubblicazioni:autoreCNR unitaDiPersonaleInterno:MATRICOLA42155 . ns10:ID386878 pubblicazioni:rivistaDi prodotto:ID35283 .