@prefix prodottidellaricerca: . @prefix istituto: . @prefix prodotto: . istituto:CDS057 prodottidellaricerca:prodotto prodotto:ID35221 . @prefix rdf: . @prefix retescientifica: . prodotto:ID35221 rdf:type retescientifica:ProdottoDellaRicerca , prodotto:TIPO1101 . @prefix rdfs: . prodotto:ID35221 rdfs:label "MOVPE growth and characterization of znte epilayers on (100) znte:P substrates (Articolo in rivista)"@en . @prefix xsd: . @prefix pubblicazioni: . prodotto:ID35221 pubblicazioni:anno "2002-01-01T00:00:00+01:00"^^xsd:gYear . @prefix skos: . prodotto:ID35221 skos:altLabel "
Lovergine N., Traversa M., Prete P., Yoshino K., Ozeki M., Mancini A.M. (2002)
MOVPE growth and characterization of znte epilayers on (100) znte:P substrates
in Journal of crystal growth
"^^rdf:HTML ; pubblicazioni:autori "Lovergine N., Traversa M., Prete P., Yoshino K., Ozeki M., Mancini A.M."^^xsd:string ; pubblicazioni:paginaInizio "37"^^xsd:string ; pubblicazioni:paginaFine "42"^^xsd:string ; pubblicazioni:numeroVolume "248"^^xsd:string . @prefix ns9: . prodotto:ID35221 pubblicazioni:rivista ns9:ID394944 ; skos:note "ISI Web of Science (WOS)"^^xsd:string ; pubblicazioni:titolo "MOVPE growth and characterization of znte epilayers on (100) znte:P substrates"^^xsd:string ; prodottidellaricerca:abstract "The growth of ZnTe by atmospheric pressure metalorganic vapour phase \nepitaxy on (100)ZnTe:P substrates is reported. The epilayers were grown at \n340\u00B0C after in situ H2 heat cleaning of the substrate for surface oxide \nremoval. Secondary ion mass spectrometry analysis of as-grown samples has \nshown that in situ treatment temperatures above 240\u00B0C are necessary. \nMoreover, no phosphorous incorporation occurs in the epilayers by either \ndiffusion from the substrate or auto-doping through the vapour. Carbon is \ninstead incorporated in the epilayers at concentrations higher than in the \nsubstrate. 4.2K photoluminescence (PL) measurements show a dominant band \nedge emission, whose main component at 2.3809eV is identified, by \ncomparison with reflectance spectra, with the 1s-state free exciton line, \nits FWHM being 2.2meV. A weak 2s-state exciton line also appears on the \nhigh-energy side of the ground-state emission, further confirming the high \noptical quality and purity of the epilayers. Donor and acceptor bound \nexciton lines are also identified within the band edge region, whilst \nfree-to-bound and donor\u0096acceptor pair bands below 2.37eV in the PL spectra \nare ascribed to luminescence from the substrate." ; prodottidellaricerca:prodottoDi istituto:CDS057 . ns9:ID394944 pubblicazioni:rivistaDi prodotto:ID35221 .