@prefix prodottidellaricerca: . @prefix istituto: . @prefix prodotto: . istituto:CDS057 prodottidellaricerca:prodotto prodotto:ID35147 . @prefix rdf: . @prefix retescientifica: . prodotto:ID35147 rdf:type retescientifica:ProdottoDellaRicerca , prodotto:TIPO1101 . @prefix rdfs: . prodotto:ID35147 rdfs:label "Hydrogen-induced boron passivation in Cz Si (Articolo in rivista)"@en . @prefix xsd: . @prefix pubblicazioni: . prodotto:ID35147 pubblicazioni:anno "2002-01-01T00:00:00+01:00"^^xsd:gYear . @prefix skos: . prodotto:ID35147 skos:altLabel "
Castaldini A., Cavalcoli D., Cavallini A., Susi E. (2002)
Hydrogen-induced boron passivation in Cz Si
"^^rdf:HTML ; pubblicazioni:autori "Castaldini A., Cavalcoli D., Cavallini A., Susi E."^^xsd:string ; pubblicazioni:paginaInizio "601"^^xsd:string ; pubblicazioni:paginaFine "605"^^xsd:string ; pubblicazioni:numeroVolume "75"^^xsd:string ; skos:note "ISI Web of Science (WOS)"^^xsd:string ; pubblicazioni:titolo "Hydrogen-induced boron passivation in Cz Si"^^xsd:string ; prodottidellaricerca:abstract "Acceptor deactivation in the near-surface region of as-grown, boron-doped \nSi wafers was detected by in-depth profiles of the free-carrier density \nobtained by capacitance-voltage measurements. As this deactivation was only \nobserved in wafers subjected to the standard cleaning procedures used in Si \nmanufacturing, we ascribed it to boron passivation by an impurity \nintroduced during the cleaning process. From the study of the free-carrier \nreactivation kinetics and of the diffusion behaviour of boron-impurity \ncomplexes, we have concluded that the impurity is possibly related to \nhydrogen introduced during the cleaning treatments. The characteristics\nof the deep level associated with this impurity have been analysed by \ndeep-level transient spectroscopy." ; prodottidellaricerca:prodottoDi istituto:CDS057 .