@prefix prodottidellaricerca: . @prefix istituto: . @prefix prodotto: . istituto:CDS057 prodottidellaricerca:prodotto prodotto:ID35142 . @prefix rdf: . @prefix retescientifica: . prodotto:ID35142 rdf:type retescientifica:ProdottoDellaRicerca , prodotto:TIPO1101 . @prefix rdfs: . prodotto:ID35142 rdfs:label "Crystallization process of amorphous silicon-carbon alloys (Articolo in rivista)"@en . @prefix xsd: . @prefix pubblicazioni: . prodotto:ID35142 pubblicazioni:anno "2002-01-01T00:00:00+01:00"^^xsd:gYear . @prefix skos: . prodotto:ID35142 skos:altLabel "
Calcagno L., Musumeci P., Roccaforte F., Bongiorno C., Foti G. (2002)
Crystallization process of amorphous silicon-carbon alloys
in Thin solid films (Print)
"^^rdf:HTML ; pubblicazioni:autori "Calcagno L., Musumeci P., Roccaforte F., Bongiorno C., Foti G."^^xsd:string ; pubblicazioni:paginaInizio "298"^^xsd:string ; pubblicazioni:paginaFine "302"^^xsd:string ; pubblicazioni:numeroVolume "411"^^xsd:string . @prefix ns9: . prodotto:ID35142 pubblicazioni:rivista ns9:ID599284 ; skos:note "ISI Web of Science (WOS)"^^xsd:string ; pubblicazioni:titolo "Crystallization process of amorphous silicon-carbon alloys"^^xsd:string ; prodottidellaricerca:abstract "The crystallization behavior of amorphous silicon carbon alloys films was \ninvestigated using infrared spectroscopy and transmission electron \nmicroscopy. The films were prepared by plasma enhanced chemical vapor \ndeposition and the thickness and composition were checked by Rutherford \nbackscattering spectroscopy. Annealing processes were carried out in the \ntemperature range of 750-1100 \u00B0C in a vacuum furnace. The changes in the \ninfrared absorption band (400-1200 cm-1) after annealing indicate a \ntransition from amorphous to a crystalline phase. The onset temperature for \nthis transition depends on the alloy composition, and it increases from 800 \nto 950 \u00B0C with increasing carbon concentration. The microstructure of \ncrystallized SiC is influenced by the film composition. Transmission \nelectron microscopy (TEM) analysis shows that the crystallized \nstoichiometric alloy is composed by polycrystalline b-SiC grains. TEM and \nRaman spectroscopy evidenced that in silicon rich and carbon rich\nalloys, the beta-SiC grains are surrounded by silicon grains and graphitic \nclusters, respectively." ; prodottidellaricerca:prodottoDi istituto:CDS057 . ns9:ID599284 pubblicazioni:rivistaDi prodotto:ID35142 .