@prefix prodottidellaricerca: . @prefix istituto: . @prefix prodotto: . istituto:CDS052 prodottidellaricerca:prodotto prodotto:ID32485 . @prefix pubblicazioni: . @prefix unitaDiPersonaleInterno: . unitaDiPersonaleInterno:MATRICOLA8466 pubblicazioni:autoreCNRDi prodotto:ID32485 . unitaDiPersonaleInterno:MATRICOLA6296 pubblicazioni:autoreCNRDi prodotto:ID32485 . @prefix modulo: . modulo:ID2155 prodottidellaricerca:prodotto prodotto:ID32485 . @prefix rdf: . prodotto:ID32485 rdf:type prodotto:TIPO1101 . @prefix retescientifica: . prodotto:ID32485 rdf:type retescientifica:ProdottoDellaRicerca . @prefix rdfs: . prodotto:ID32485 rdfs:label "Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots (Articolo in rivista)"@en . @prefix xsd: . prodotto:ID32485 pubblicazioni:anno "2004-01-01T00:00:00+01:00"^^xsd:gYear ; pubblicazioni:doi "10.1088/0268-1242/19/3/030"^^xsd:string . @prefix skos: . prodotto:ID32485 skos:altLabel "
Hastas N.A., Tassis D.H., Dimitriadis C.A., Dozsa L., Franchi S., Frigeri P. (2004)
Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots
in Semiconductor science and technology (Print)
"^^rdf:HTML ; pubblicazioni:autori "Hastas N.A., Tassis D.H., Dimitriadis C.A., Dozsa L., Franchi S., Frigeri P."^^xsd:string ; pubblicazioni:paginaInizio "461"^^xsd:string ; pubblicazioni:paginaFine "467"^^xsd:string ; pubblicazioni:url "http://iopscience.iop.org/0268-1242/19/3/030"^^xsd:string ; pubblicazioni:numeroVolume "19"^^xsd:string . @prefix ns11: . prodotto:ID32485 pubblicazioni:rivista ns11:ID472985 ; pubblicazioni:pagineTotali "7"^^xsd:string ; skos:note "ISI Web of Science (WOS)"^^xsd:string , "Scopu"^^xsd:string ; pubblicazioni:affiliazioni "Department of Physics, University of Thessaloniki, 54124 Thessaloniki, Greece \n Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, PO Box 49, Budapest 114, H-1525, Hungary \n IMEM Institute, CNR, Parco Area dele Scienze, 43010 Fontanini, Parma, Italy"^^xsd:string ; pubblicazioni:titolo "Electrical transport and low frequency noise characteristics of Au/n-GaAs Schottky diodes containing InAs quantum dots"^^xsd:string ; prodottidellaricerca:abstract "Au/n-GaAs Schottky diodes, containing layers of InAs quantum dots (QDs), are investigated by measuring the forward current-voltage characteristics in the temperature range of 77-300 K and low frequency noise at room temperature. The zero-bias barrier height decreases and the ideality factor increases with decreasing temperature, and the ideality factor was found to follow the T0-effect. The departure from the ideal thermionic-emission diffusion model was interpreted in terms of inhomogeneous Schottky contact with a Gaussian distribution of barrier heights. The excess current at small biases, observed in diodes containing layers of InAs QDs, was attributed to small patches of reduced barrier height. In the diode without QDs, the noise intensity SI shows 1/f behaviour and is proportional to I2F, which is explained by modulation of the barrier height due to trapping processes in interface states. In diodes containing InAs QDs, SI shows 1/f? (with ? < 1) behaviour and is proportional to I2F in the high current range, which is explained by generation of band tail states with exponential energy distribution in the GaAs layer due to the QD formation. In the low current range, SI increases faster than I2F due to contribution to the noise of patches of reduced barrier height."@en ; prodottidellaricerca:prodottoDi istituto:CDS052 , modulo:ID2155 ; pubblicazioni:autoreCNR unitaDiPersonaleInterno:MATRICOLA8466 , unitaDiPersonaleInterno:MATRICOLA6296 . ns11:ID472985 pubblicazioni:rivistaDi prodotto:ID32485 .