Short channel effects in polysilicon TFTs (Articolo in rivista)

Type
Label
  • Short channel effects in polysilicon TFTs (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2005.01.069 (literal)
Alternative label
  • G. Fortunato, A. Valletta, P. Gaucci, L. Mariucci, and S. D. Brotherton (2005)
    Short channel effects in polysilicon TFTs
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • G. Fortunato, A. Valletta, P. Gaucci, L. Mariucci, and S. D. Brotherton (literal)
Pagina inizio
  • 221 (literal)
Pagina fine
  • 226 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 487 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IFN-CNR (literal)
Titolo
  • Short channel effects in polysilicon TFTs (literal)
Abstract
  • Short channel effects have been investigated in n-channel polysilicon thin film transistors. Transconductance degradation has been observed when reducing the channel length L and this effect has been explained with the presence of a parasitic resistance related to residual implant damage. Threshold voltage slighlty decreases for channel length around L=1 Am and simulations confirm that the roll-off of the threshold voltage is expected for Lb1 Am. In the output characteristics a stronger kink effect has been observed at short L which, from a comprehensive analysis of the current components, can be attributed to an enhanced parasitic bipolar transistor action. (literal)
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