@prefix prodottidellaricerca: . @prefix istituto: . @prefix prodotto: . istituto:CDS052 prodottidellaricerca:prodotto prodotto:ID198266 . @prefix pubblicazioni: . @prefix unitaDiPersonaleInterno: . unitaDiPersonaleInterno:MATRICOLA8619 pubblicazioni:autoreCNRDi prodotto:ID198266 . @prefix unitaDiPersonaleEsterno: . unitaDiPersonaleEsterno:ID14393 pubblicazioni:autoreCNRDi prodotto:ID198266 . @prefix modulo: . modulo:ID5707 prodottidellaricerca:prodotto prodotto:ID198266 . @prefix rdf: . @prefix retescientifica: . prodotto:ID198266 rdf:type retescientifica:ProdottoDellaRicerca , prodotto:TIPO1101 . @prefix rdfs: . prodotto:ID198266 rdfs:label "New Approaches for Making Large-Volume and Uniform CdZnTe and CdMnTe Detectors (Articolo in rivista)"@en . @prefix xsd: . prodotto:ID198266 pubblicazioni:anno "2012-01-01T00:00:00+01:00"^^xsd:gYear ; pubblicazioni:doi "10.1109/TNS.2012.2202917"^^xsd:string . @prefix skos: . prodotto:ID198266 skos:altLabel "
K. H. Kim, A. E. Bolotnikov, G. S. Camarda, R. Tappero, A. Hossain, Y. Cui, J. Franc, L. Marchini, A. Zappettini, P. Fochuk, G. Yang, R. Gul, R. B. James (2012)
New Approaches for Making Large-Volume and Uniform CdZnTe and CdMnTe Detectors
in IEEE transactions on nuclear science; IEEE-Institute Of Electrical And Electronics Engineers Inc., Piscataway (Stati Uniti d'America)
"^^rdf:HTML ; pubblicazioni:autori "K. H. Kim, A. E. Bolotnikov, G. S. Camarda, R. Tappero, A. Hossain, Y. Cui, J. Franc, L. Marchini, A. Zappettini, P. Fochuk, G. Yang, R. Gul, R. B. James"^^xsd:string ; pubblicazioni:paginaInizio "1510"^^xsd:string ; pubblicazioni:paginaFine "1515"^^xsd:string ; pubblicazioni:url "http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6236261&contentType=Journals+%26+Magazines&sortType%3Dasc_p_Sequence%26filter%3DAND%28p_IS_Number%3A6268401%29"^^xsd:string ; pubblicazioni:numeroVolume "59"^^xsd:string . @prefix ns12: . prodotto:ID198266 pubblicazioni:rivista ns12:ID394469 ; pubblicazioni:numeroFascicolo "4"^^xsd:string ; skos:note "ISI Web of Science (WOS)"^^xsd:string ; pubblicazioni:affiliazioni "1. Brookhaven Natl Lab, Upton, NY 11973 USA; 2. Charles Univ Prague, Prague 12116, Czech Republic; 3. IMEM CNR, I-43124 Parma, Italy; 4. Chernivisti Natl Univ, UA-58012 Chernovtsy, Ukraine"^^xsd:string ; pubblicazioni:titolo "New Approaches for Making Large-Volume and Uniform CdZnTe and CdMnTe Detectors"^^xsd:string ; prodottidellaricerca:abstract "Although CdZnTe (CZT) and CdMnTe (CMT) materials are leading contenders for room-temperature semiconductor detectors, nonetheless, both materials have limitations hindering their full usage in producing economical, uniform, large-volume devices due to their grain/twin boundaries, material purity, secondary-phase Te defects and material segregation. We tried to prevent the generation of twin and subgrain boundaries to achieve large-volume CZT crystals by means of local temperature control between the CZT melt and quartz crucible. Also, we have expanded the understanding of the electrical and structural properties of coherent/incoherent twin boundaries. The high residual impurities in the starting source materials, especially in manganese, were identified as obstacles against obtaining high-performance CMT detectors. We found that purifying manganese telluride (MnTe) via a floating Te melt-zone very effectively removes impurities, leading to better detectors. CMT detectors fabricated with purified material give a 2.1% energy resolution for 662 keV with a Cs-137 gamma source without any electron-loss corrections. Secondary-phase Te defects deteriorate detector performance due to incomplete charge collection caused by charge trapping. In situ growth interface studies reveal the thermo-migration of Te inclusions to CZT melts and the dependence of Te-inclusion size on the cooling rate. The effective segregation coefficient of Zn in the CdTe host is nearly 1.3, so about 5%-6% of Zn deviation was reported in Bridgman-grown CZT (Zn = 10% ingots. Such uncontrolled Zn variations cause a significant variation of the band-gap throughout the ingot and, consequently, affect the nonuniformity of the detectors' responses. Practically, this means that manufacturers cannot cut the ingot parallel to the crystal growth direction. We also demonstrated that the segregation of Zn can be controlled by creating particular thermal environments after growth."@en . @prefix ns13: . prodotto:ID198266 pubblicazioni:editore ns13:ID6078 ; prodottidellaricerca:prodottoDi modulo:ID5707 , istituto:CDS052 ; pubblicazioni:autoreCNR unitaDiPersonaleInterno:MATRICOLA8619 , unitaDiPersonaleEsterno:ID14393 . @prefix parolechiave: . prodotto:ID198266 parolechiave:insiemeDiParoleChiave . ns12:ID394469 pubblicazioni:rivistaDi prodotto:ID198266 . ns13:ID6078 pubblicazioni:editoreDi prodotto:ID198266 . parolechiave:insiemeDiParoleChiaveDi prodotto:ID198266 .