@prefix pubblicazioni: . @prefix unitaDiPersonaleInterno: . @prefix prodotto: . unitaDiPersonaleInterno:MATRICOLA8816 pubblicazioni:autoreCNRDi prodotto:ID198239 . @prefix prodottidellaricerca: . @prefix istituto: . istituto:CDS052 prodottidellaricerca:prodotto prodotto:ID198239 . unitaDiPersonaleInterno:MATRICOLA6558 pubblicazioni:autoreCNRDi prodotto:ID198239 . @prefix modulo: . modulo:ID2455 prodottidellaricerca:prodotto prodotto:ID198239 . @prefix rdf: . @prefix retescientifica: . prodotto:ID198239 rdf:type retescientifica:ProdottoDellaRicerca , prodotto:TIPO1302 . @prefix rdfs: . prodotto:ID198239 rdfs:label "On the formation of blisters in annealed hydrogenated a-Si/a-Ge multilayers (Abstract/Poster in atti di convegno)"@en . @prefix xsd: . prodotto:ID198239 pubblicazioni:anno "2012-01-01T00:00:00+01:00"^^xsd:gYear . @prefix skos: . prodotto:ID198239 skos:altLabel "
C. Frigeri1, M. Ser\u00E9nyi2, N. Q. Kh\u00E0nh2, A. Csik3, L Nasi1, Z. Erd\u00E9lyi4, D. L. Beke4, H.-G. Boyen5 (2012)
On the formation of blisters in annealed hydrogenated a-Si/a-Ge multilayers
in E-MRS Fall Meeting 2012, Symposium E (Nanoscaled Si, Ge based materials: Fabrication, Characterization, Devices, Warsaw (PL), 17-21 Sept. 2012
"^^rdf:HTML ; pubblicazioni:autori "C. Frigeri1, M. Ser\u00E9nyi2, N. Q. Kh\u00E0nh2, A. Csik3, L Nasi1, Z. Erd\u00E9lyi4, D. L. Beke4, H.-G. Boyen5"^^xsd:string ; skos:note "Abstract"^^xsd:string ; pubblicazioni:affiliazioni "1 CNR- IMEM Institute, Parco Area delle Scienze 37/A, 43100 Parma, Italy; 2 Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest, Hungary; 3 Institute of Nuclear Research of the Hungarian Academy of Sciences, P.O. Box 51, H-4001 Debrecen, Hungary; 4 Department of Solid State Physics, University of Debrecen, P.O. Box 2, H-4010 Debrecen, Hungary; 5 Institute for Materials Research (IMO), Hasselt University, Belgium"^^xsd:string ; pubblicazioni:titolo "On the formation of blisters in annealed hydrogenated a-Si/a-Ge multilayers"^^xsd:string ; prodottidellaricerca:abstract "The amorphous SiGe alloy is employed in solar cells as the low band gap cell in association with the high band gap a-Si. One way to obtain the SiGe alloy is through annealing of a-Si/a-Ge multi-layers (MLs) so as to intermix Si and Ge [e.g. T. Sameshima, Thin Solid Films 487 (2005) 67]. H is added to passivate the dangling bonds to reduce the defects in the band gap. We report on the evolution of the structure of hydrogenated a-Si/a-Ge MLs upon annealing as a function of the incorporated H. The MLs were obtained by RF sputtering in Ar with addition of H at different flow rates. The MLs consisted of 50 couples of alternating 3 nm thick a-Si and a-Ge layers. Single layers were sputtered under the same conditions to be used as reference samples. Annealing was done at 350 and 400 \u00B0C for 1, 4, 10 h. Analyses were performed by AFM, ERDA, IR Absorption. The H incorporation increases with increasing flow rates up 17 and 7 at % in Si and Ge, resp. Upon annealing of the MLs formation of blisters and, at the same time, release of H from its bonds to Si and Ge were observed. Blisters density increases with the increase of liberated H. The H is first released from the mono-hydride bonds to Si and Ge suggesting that this occurs primarily at nanocavities. Unbonding from the di-hydrides, likely located in the bulk, occurs for longer annealing times. The growth of the nanocavities containing the released H leads to the formation of the blisters and should occur by in-diffusion of other H liberated in the annealing from the next- neighboring regions and/or by Ostwald ripening. Calculations of the H2 molecule density in the blisters by the Wan's lenticular crack model [K.-T. Wan, J. Mater. Res. 8 (1993) 1126] show that it is 9.9 and 5.7 % of the H remained in a-Si layers and a-Si/a-Ge MLs, resp., after annealing."@en ; prodottidellaricerca:prodottoDi istituto:CDS052 , modulo:ID2455 ; pubblicazioni:autoreCNR unitaDiPersonaleInterno:MATRICOLA6558 , unitaDiPersonaleInterno:MATRICOLA8816 .